公开(公告)号：US12251019B2

公开(公告)日：2025-03-18

申请号：US18072210

申请日：2022-11-30

Applicant: LG Display Co., Ltd.

Inventor： Hyuncheol Cho ,  Euijung Kim

IPC: A47B97/00 ,  F16B1/00

Abstract: A clearance adjustment member and a fixing apparatus including the same is disclosed. The clearance adjustment member including: a magnetic force including a through hole, the magnetic force unit configured to be attached to a bracket that is mounted on a wall; a screw beam disposed in the through hole of the magnetic force unit; and an adjustment unit connected to the screw beam, the adjustment unit configured to move along the screw beam to adjust a clearance between the wall and a display device that is to be connected to the adjustment unit. According to the present disclosure, it is possible to adjust the clearance between the wall and the display device simply and precisely.

公开(公告)号：US20250089535A1

公开(公告)日：2025-03-13

申请号：US18826996

申请日：2024-09-06

Applicant: LG DISPLAY CO., LTD.

Inventor： SeongYong UHM ,  MinHo OH

IPC: H10K59/80 ,  H10K59/122 ,  H10K59/131 ,  H10K59/40 ,  H10K102/00

Abstract: A display device includes a substrate including a display area on which a plurality of subpixels are arranged, a non-display area located outside the display area and including a pad area, and a groove, an insulating layer disposed on the substrate, a bank disposed on the insulating layer and having a plurality of openings, and a barrier layer extending from an upper portion of the bank to the groove.

公开(公告)号：US20250089478A1

公开(公告)日：2025-03-13

申请号：US18754581

申请日：2024-06-26

Applicant: LG Display Co., Ltd.

Inventor： Ji Ah KIM ,  Joung Mi Choi

IPC: H10K59/124 ,  G09G3/3233

Abstract: A display panel may include a substrate, a first light emitting transistor and a driving transistor formed over the substrate, an interlayer insulating film formed to cover the first light emitting transistor and the driving transistor, a first planarization layer formed on the interlayer insulating film, a link line formed on the first planarization layer and electrically connected to the first light emitting transistor through the first planarization layer and the interlayer insulating film, a second planarization layer formed to cover the link line, and a light emitting element formed on the second planarization layer, in which a cathode electrode is electrically connected to the link line through a drilling area.

公开(公告)号：US20250089298A1

公开(公告)日：2025-03-13

申请号：US18800908

申请日：2024-08-12

Applicant: LG Display Co., Ltd.

Inventor： JaeHyun KIM ,  JaeYoung OH ,  KwangHeum LEE ,  Ahrum SOHN ,  Minho LEE

IPC: H01L29/417 ,  H01L27/12 ,  H01L29/786

Abstract: A thin film transistor for a display device can include an active layer disposed on a substrate, a gate electrode overlapping with the active layer, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and at least one hole in the active layer, in which the at least one hole at least partially overlaps with an edge of the gate electrode. Also, the at least one hole in the active layer can control or block diffusion of a dopant within the active layer.

公开(公告)号：US20250088806A1

公开(公告)日：2025-03-13

申请号：US18821644

申请日：2024-08-30

Applicant: LG Display Co., Ltd.

Inventor： Sungsu HAM ,  Sungtae LEE ,  Yongjun CHO ,  Seungwoo BAEK

IPC: H04R17/00 ,  H04R1/02 ,  H04R1/40 ,  H04R3/12

Abstract: An apparatus in one example includes a vibration member, a vibration apparatus connected to a rear surface of the vibration member, and a rear cover covering a rear surface of the vibration apparatus. The rear cover includes a hole part having a plurality of holes overlapping the vibration apparatus. The size of the hole part is greater than the size of the vibration apparatus.

公开(公告)号：US20250087157A1

公开(公告)日：2025-03-13

申请号：US18789339

申请日：2024-07-30

Applicant: LG Display Co., Ltd.

Inventor： Ji Ah KIM ,  Joung Mi CHOI

IPC: G09G3/3233

Abstract: A subpixel circuit and a display device including the subpixel circuit are discussed. The subpixel circuit in one example includes a light emitting element configured to receive a high-potential driving voltage at an anode electrode, and a driving transistor including a first node, a second node, and a third node. The subpixel circuit further includes a scan transistor controlled by a first scan signal and transmitting a data voltage through a data line, a storage capacitor, and a control circuit configured to control operations of the driving transistor, the scan transistor, and the storage capacitor. The control circuit can be located between a cathode electrode of the light emitting element and a low-potential base voltage line.

公开(公告)号：USD1066278S1

公开(公告)日：2025-03-11

申请号：US29798292

申请日：2021-07-07

Applicant: LG DISPLAY CO., LTD.

Designer： Nakyoung Han ,  Yongjoon Jeon ,  Youhong Cha ,  Dongkyu Yoon

公开(公告)号：USD1066277S1

公开(公告)日：2025-03-11

申请号：US29767700

申请日：2021-01-25

Applicant: LG DISPLAY CO., LTD.

Designer： Inyoung Kim

公开(公告)号：US12249655B2

公开(公告)日：2025-03-11

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin Kim ,  HeeSung Lee ,  Sohyung Lee ,  MinCheol Kim ,  JeongSuk Yang ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US12249286B2

公开(公告)日：2025-03-11

申请号：US18543637

申请日：2023-12-18

Applicant: LG Display Co., Ltd.

Inventor： Insu Hwang ,  DongYoon Lee ,  Kimin Son

IPC: G09G3/3258 ,  H10K59/131

Abstract: A display device is disclosed. The display device comprises: a driving transistor drives a light emitting element; a scanning transistor connected between a first node of the driving transistor and a data line; and a sensing transistor connected between a second node of the driving transistor and a reference voltage line, wherein a period of time during which a characteristic value of the sensing transistor is sensed includes a voltage control period, a voltage tracking period, and a sampling period, and during the voltage control period, a first sensing voltage is supplied to the data line, a second sensing voltage is supplied to a third node of the driving transistor, a third sensing voltage is supplied to gate nodes of the scanning transistor and the sensing transistor, and a fourth sensing voltage is supplied to the reference voltage line. Accordingly, changes of characteristic values of the sensing transistor are sensed.