Optical irradiation apparatus
    61.
    发明授权

    公开(公告)号:US11197717B2

    公开(公告)日:2021-12-14

    申请号:US16491531

    申请日:2018-10-31

    Abstract: The present invention provides an optical irradiation apparatus including: a dual laser light source unit which simultaneously or selectively outputs multiple light sources created with different outputs; an optical fiber which is connected to the dual laser light source unit, receives the light outputted from the dual laser light source unit, and emits the received light through an embossed end surface; and an inflatable balloon catheter which is formed to surround the embossed end surface of the optical fiber and expands constricted tissue. With the present invention, it is possible to effectively treat constricted tissue during a procedure of performing an anticancer therapy on entire human bodies with various types of cancers, and it is possible to mitigate patient's pain by reducing a relapse rate of stenosis after the photothermal therapy.

    OBJECT DAMAGE INSPECTING DEVICE AND INSPECTING METHOD USING THE SAME

    公开(公告)号:US20210293726A1

    公开(公告)日:2021-09-23

    申请号:US16839627

    申请日:2020-04-03

    Inventor: Chan Jung KIM

    Abstract: Disclosed are an object damage inspection system and an object damage inspection method using the same. The system includes a vibration exciter for setting a vibration exciting pattern and applying a physical force to one face of the fixed test object based on the set vibration exciting pattern; a sensor contacting a portion of the test object, wherein the sensor collects a vibration signal generated from the test object when the physical force is applied thereto; and a damage determiner configured to determine whether the test object has physical damage, based on a test object measurement frequency signal and a reference object measurement frequency signal, wherein the test object measurement frequency signal includes a frequency domain signal into which the vibration signal collected by the sensor is converted.

    DISCHARGE PLASMA SINTERING METHOD FOR MANUFACTURING SINGLE-WALLED CARBON NANOTUBE REINFORCED METAL MATRIX COMPOSITE AND COMPOSITE MATERIAL PRODUCED THEREBY

    公开(公告)号:US20190276915A1

    公开(公告)日:2019-09-12

    申请号:US16335071

    申请日:2017-08-24

    Inventor: Hansang KWON

    Abstract: The present invention provides a method of manufacturing a single-walled-carbon-nanotube-reinforced metal matrix complex material. The method includes (a) manufacturing a complex powder by performing ball milling of a metal powder and a single-walled carbon nanotube powder, and (b) manufacturing a metal-carbon-nanotube complex material by spark-plasma-sintering (SPS) the complex powder manufactured during step (a). According to the method of manufacturing the single-walled-carbon-nanotube-reinforced metal matrix complex material according to the present invention, in order to manufacture material parts requiring high strength and abrasion resistance, the single-walled carbon nanotube powder is added to various metal matrixes and ball milling is performed, thus manufacturing a complex powder having uniform dispersity. The manufactured complex powder is subjected to complexation in a short period of time using a spark-plasma-sintering (SPS) process, thereby easily manufacturing a bulk-type single-walled-carbon-nanotube-reinforced metal matrix complex material having excellent physical properties.

    METHOD FOR ELECTRICAL SWITCHING IN OXIDE SEMICONDUCTOR DEVICE
    70.
    发明申请
    METHOD FOR ELECTRICAL SWITCHING IN OXIDE SEMICONDUCTOR DEVICE 审中-公开
    氧化物半导体器件电气切换方法

    公开(公告)号:US20160336937A1

    公开(公告)日:2016-11-17

    申请号:US14801828

    申请日:2015-07-17

    CPC classification number: H03K17/78

    Abstract: A method for electrical switching in an oxide semiconductor device is disclosed. The method includes applying a bias voltage to an oxide thin film of the semiconductor device, the semiconductor device having the oxide thin film formed on a substrate and two terminals formed at both ends of the oxide thin film, and controlling on-off switching of the semiconductor device by irradiating a carbon dioxide (CO2) laser to the oxide thin film, while the bias voltage is applied.

    Abstract translation: 公开了一种用于氧化物半导体器件中的电开关的方法。 该方法包括对半导体器件的氧化物薄膜施加偏置电压,将形成在基板上的氧化物薄膜的半导体器件和形成在氧化物薄膜两端的两个端子进行控制, 半导体器件通过在施加偏置电压的同时将二氧化碳(CO 2)激光照射到氧化物薄膜上。

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