公开(公告)号：US06566718B2

公开(公告)日：2003-05-20

申请号：US09848085

申请日：2001-05-03

Applicant: Karsten Wieczorek ,  Rolf Stephan ,  Manfred Horstmann ,  Stephan Kruegel

Inventor： Karsten Wieczorek ,  Rolf Stephan ,  Manfred Horstmann ,  Stephan Kruegel

IPC: H01L2976

CPC classification number: H01L23/5222 ,  H01L21/76816 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A field effect transistor comprises a gate electrode contact of a highly conductive material that contacts the gate electrode and extends in the transistor width dimension at least along a portion of the channel. Thus, the gate resistance and the gate signal propagation time for a voltage applied to the gate contact is significantly reduced even for devices with an extremely down scaled gate length. Moreover, a method for fabricating the above FET is disclosed.

公开(公告)号：US06268257B1

公开(公告)日：2001-07-31

申请号：US09557714

申请日：2000-04-25

Applicant: Karsten Wieczorek ,  Michael Raab ,  Rolf Stephan

Inventor： Karsten Wieczorek ,  Michael Raab ,  Rolf Stephan

IPC: H01L21336

CPC classification number: H01L29/66507 ,  H01L21/28247 ,  H01L29/6659

Abstract: A method is disclosed in which a low-resistance portion of the gate electrode of a transistor is formed independently of the formation of low-resistance portions in the drain and source regions. Accordingly, the device features a thick low-resistance portion in the gate electrode, for example, a thick gate silicide for supporting low gate delays by minimizing the gate resistance, and a thin low-resistance portion in the drain and source in order to meet the requirements for shallow junction integration. Moreover, a transistor is disclosed having a low-resistance gate electrode portion, the composition of which is different from the low-resistance portion of the drain and source.

Abstract translation: 公开了一种方法，其中晶体管的栅电极的低电阻部分形成为独立于在漏极和源极区域中形成低电阻部分。 因此，该器件在栅电极中具有厚的低电阻部分，例如，通过最小化栅极电阻来支持低栅极延迟的厚栅极硅化物，以及漏极和源极中的薄的低电阻部分，以便满足 浅结合整合的要求。 此外，公开了一种具有低电阻栅极电极部分的晶体管，其组成不同于漏极和源极的低电阻部分。