公开(公告)号：US10962183B2

公开(公告)日：2021-03-30

申请号：US16332108

申请日：2018-06-01

Applicant: K-TRONICS (SUZHOU) TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Huang ,  Qingyu Yu

IPC: F21S4/28 ,  F21V23/00 ,  F21Y115/10

Abstract: The present disclosure provides an LED light bar, a light source module, and a display device. The LED bar comprises a substrate on which a light source component and an indicator light component are disposed. The light source module comprises the LED light bar. The display device comprises the light source module.

公开(公告)号：US10566556B2

公开(公告)日：2020-02-18

申请号：US15547372

申请日：2016-03-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Huang ,  Dawei Wang

IPC: H01L29/08 ,  H01L51/05 ,  G02F1/1333 ,  H01L27/32 ,  H01L51/56 ,  G09G3/3258 ,  H01L51/00 ,  H01L51/52

Abstract: A display panel, a method for fabricating the same and a display device are disclosed. The display panel includes a top emission AMOLED display sub-panel, a normally-white mode reflective display sub-panel provided on the top emission AMOLED display sub-panel, and a switching element configured to turn on the top emission AMOLED display sub-panel and turn off the normally-white mode reflective display sub-panel according to a received first instruction, and turn on the normally-white mode reflective display sub-panel and turn off the top emission AMOLED display sub-panel according to a received second instruction. By fabricating the normally-white mode reflective display sub-panel on the top emission AMOLED display sub-panel, it is possible to switch, on one operation interface, to the normally-white mode reflective sub-panel to achieve a good display effect under strong light, or to the top emission AMOLED display sub-panel to achieve viewing color content. The display panel and the corresponding display device are easy to operate and simple in structure.

公开(公告)号：US20190103588A1

公开(公告)日：2019-04-04

申请号：US16129270

申请日：2018-09-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Bo Jiang ,  Wei Huang

IPC: H01L51/52 ,  H01L51/56

Abstract: Embodiments of the present disclosure provide an OLED, a method for manufacturing the same, a display substrate and a display device. The OLED includes: a reflective electrode, an organic light-emitting layer, a translucent electrode, and a light extraction layer located on a side of the translucent electrode away from the organic light-emitting layer and being in contact with the translucent electrode, which are arranged in sequence, wherein the light extraction layer is of a single layer structure and has a refractive index that decreases along a light-emitting direction, the light-emitting direction is a direction of the light extraction layer away from the organic light-emitting layer, and wherein a refractive index of the light extraction layer on a side in contact with the translucent electrode is greater than the refractive index of the translucent electrode.

公开(公告)号：US10141530B2

公开(公告)日：2018-11-27

申请号：US15110091

申请日：2015-11-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SHANGHAI JIAO TONG UNIVERSITY

Inventor： Wei Huang ,  Jiaqing Zhao ,  Wei Tang ,  Linrun Feng ,  Xiaojun Guo

IPC: H01L51/00 ,  H01L35/24 ,  H01L29/08 ,  H01L51/10 ,  H01L51/05

Abstract: This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.

公开(公告)号：US20170149003A1

公开(公告)日：2017-05-25

申请号：US15110091

申请日：2015-11-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SHANGHAI JIAO TONG UNIVERSITY

Inventor： Wei Huang ,  Jiaqing Zhao ,  Wei Tang ,  Linrun Feng ,  Xiaojun Guo

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/107 ,  H01L51/0055 ,  H01L51/0541 ,  H01L51/0558 ,  H01L51/105 ,  H01L2251/303

Abstract: This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.