公开(公告)号：US07417524B2

公开(公告)日：2008-08-26

申请号：US11353215

申请日：2006-02-13

Applicant: Wai-Yi Lien ,  Denny Tang ,  Wen-Chin Lin ,  Chao-Hsiung Wang

Inventor： Wai-Yi Lien ,  Denny Tang ,  Wen-Chin Lin ,  Chao-Hsiung Wang

IPC: H01F5/00

CPC classification number: H01F17/0006 ,  H01F3/10 ,  H01F19/08 ,  H01F41/34 ,  H01F2017/0066 ,  H01F2017/0086

Abstract: A semiconductor device having a semiconductor substrate and a first insulator overlying the semiconductor substrate. A spiral coil inductor overlies the first insulator and a second insulator overlies the spiral coil inductor. A patterned ferromagnetic film overlies the second insulator and a patterned magnetic-bias film overlies the patterned ferromagnetic film.

Abstract translation: 一种具有半导体衬底和覆盖半导体衬底的第一绝缘体的半导体器件。 螺旋线圈电感器覆盖在第一绝缘体上，第二绝缘体覆盖螺旋线圈电感器。 图案化的铁磁膜覆盖在第二绝缘体上，并且图案化的偏磁膜覆盖在图案化的铁磁膜上。

公开(公告)号：US07387667B1

公开(公告)日：2008-06-17

申请号：US11898530

申请日：2007-09-13

Applicant: Wen-Chin Lin ,  Tzu-Kwei Sun ,  Reng-Fang Lin

Inventor： Wen-Chin Lin ,  Tzu-Kwei Sun ,  Reng-Fang Lin

IPC: C09D11/00 ,  C09B62/453

CPC classification number: C09B67/0055 ,  C09B67/0057 ,  C09D11/328

Abstract: The present invention relates to a black dye composition, comprising: (a) a compound of the following formula (I), (b) a compound of the following formula (II), (c) a compound of the following formula (III), wherein R1, R2, R3, and R4 are defined the same as the specification. The present invention also relates to a black ink composition afforded from the aforementioned black dye composition. The black ink composition of the present invention is suitable for paper ink-jet printing, and exhibits the properties of good light-fastness, high color strength, solubility, and fine fluency of ink.

Abstract translation: 本发明涉及黑色染料组合物，其包含：（a）下式（I）的化合物，（b）下式（II）的化合物，（c）下式（III）的化合物， 其中R 1，R 2，R 3和R 4定义与说明书相同。 本发明还涉及由上述黑色染料组合物提供的黑色油墨组合物。 本发明的黑色油墨组合物适用于纸张喷墨印刷，并且具有良好的耐光性，高着色强度，溶解性和油墨的微细流动性。

公开(公告)号：US07349243B2

公开(公告)日：2008-03-25

申请号：US11379527

申请日：2006-04-20

Applicant: Wen-Chin Lin ,  Denny Tang ,  Hsu-Chen Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  Hsu-Chen Cheng

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: Disclosed herein are various embodiments of a 3-parameter switching technique for MRAM memory cells arranged on an MRAM array. The disclosed technique alters the relationship between the disturbance margin and write margin of MRAM arrays to reduce the overall disturbance for the arrays by either enlarging the write margin with respect to the original disturbance margin or enlarging the disturbance margin in view of the original write margin. In either approach, the disclosed 3-parameter switching technique successfully decreases the inadvertent writing of unselected bits.

Abstract translation: 这里公开了布置在MRAM阵列上的MRAM存储器单元的3参数切换技术的各种实施例。 所公开的技术改变MRAM阵列的扰动余量与写入余量之间的关系，以通过相对于原始干扰裕度放大写入裕度或者根据原始写入裕度来扩大扰动余量来减小阵列的整体干扰。 在任一方法中，所公开的3参数切换技术成功地减少了无选择位的无意写入。

公开(公告)号：US20070247900A1

公开(公告)日：2007-10-25

申请号：US11379527

申请日：2006-04-20

Applicant: Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: Disclosed herein are various embodiments of a 3-parameter switching technique for MRAM memory cells arranged on an MRAM array. The disclosed technique alters the relationship between the disturbance margin and write margin of MRAM arrays to reduce the overall disturbance for the arrays by either enlarging the write margin with respect to the original disturbance margin or enlarging the disturbance margin in view of the original write margin. In either approach, the disclosed 3-parameter switching technique successfully decreases the inadvertent writing of unselected bits.

Abstract translation: 这里公开了布置在MRAM阵列上的MRAM存储器单元的3参数切换技术的各种实施例。 所公开的技术改变MRAM阵列的扰动余量与写入余量之间的关系，以通过相对于原始干扰裕度放大写入裕度或者根据原始写入裕度来扩大扰动余量来减小阵列的整体干扰。 在任一方法中，所公开的3参数切换技术成功地减少了无选择位的无意写入。

公开(公告)号：US20070205406A1

公开(公告)日：2007-09-06

申请号：US11746315

申请日：2007-05-09

Applicant: Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

Inventor： Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.

Abstract translation: 提供一种制造存储器件的方法。 该方法包括在衬底上形成电极。 该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。 该方法还包括在电极上和锥形电极接触表面上形成相变特征。

公开(公告)号：US20070155960A1

公开(公告)日：2007-07-05

申请号：US11452909

申请日：2006-06-15

Applicant: Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

Inventor： Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

IPC: C09D11/00 ,  C09B39/00

CPC classification number: C09D11/32 ,  C09B29/363

Abstract: The present invention discloses a yellow dye compound having a structure of the following formula (I): wherein M is H, Li, NH4 or Na. The dye compound of the present invention is particularly applied to yellow dye compound for paper-printing ink jet ink and can be made into yellow ink jet ink with greenish yellow, wide color gamut, and excellent solubility.

公开(公告)号：US07229883B2

公开(公告)日：2007-06-12

申请号：US11064132

申请日：2005-02-23

Applicant: Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

Inventor： Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L21/336

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.

Abstract translation: 提供一种制造存储器件的方法。 该方法包括在衬底上形成电极。 该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。 该方法还包括在电极上和锥形电极接触表面上形成相变特征。

公开(公告)号：US07154798B2

公开(公告)日：2006-12-26

申请号：US11115422

申请日：2005-04-27

Applicant: Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fang-Shi Jordan Lai

Inventor： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fang-Shi Jordan Lai

IPC: G11C7/02

CPC classification number: G11C11/1673

Abstract: A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

Abstract translation: 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

公开(公告)号：US20060229683A1

公开(公告)日：2006-10-12

申请号：US11089969

申请日：2005-03-25

Applicant: Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang ,  Wen-Chin Lin ,  Mark Hsieh

Inventor： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang ,  Wen-Chin Lin ,  Mark Hsieh

IPC: A61N1/00

CPC classification number: G11C11/16 ,  G11C5/025 ,  H01L23/5225 ,  H01L27/222 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A circuit with an inter-module radiation interference shielding mechanism is disclosed. The circuit includes a circuit module producing a radiation field. At least one radiation shielding module is situated between the circuit module and another module that is vulnerable to the interference of the radiation field. The shielding module is substantially tangential to the radiation field.

公开(公告)号：US20060186440A1

公开(公告)日：2006-08-24

申请号：US11064132

申请日：2005-02-23

Applicant: Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

Inventor： Chao-Hsiung Wang ,  Li-Shyue Lai ,  Denny Tang ,  Wen-Chin Lin

IPC: H01L29/768

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.

Abstract translation: 提供一种制造存储器件的方法。 该方法包括在衬底上形成电极。 该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。 该方法还包括在电极上和锥形电极接触表面上形成相变特征。