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119 条记录 (耗时 0.034 秒)

    Semiconductor probe with high resolution resistive tip and method of fabricating the same
    62.
    发明授权
    Semiconductor probe with high resolution resistive tip and method of fabricating the same 有权
    具有高分辨率电阻尖端的半导体探针及其制造方法

    公开(公告)号：US07828981B2

    公开(公告)日：2010-11-09

    申请号：US11835874

    申请日：2007-08-08

    申请人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

    IPC分类号： C23F1/00

    CPC分类号： G01Q60/30 ,  G01Q60/38

    摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

    摘要翻译： 提供了具有高分辨率尖端的半导体探针及其制造方法。 半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

    ELECTRIC FIELD READ/WRITE DEVICE AND METHOD OF DRIVING THE SAME
    64.
    发明申请
    ELECTRIC FIELD READ/WRITE DEVICE AND METHOD OF DRIVING THE SAME 失效
    电场读/写装置及其驱动方法

    公开(公告)号：US20080279062A1

    公开(公告)日：2008-11-13

    申请号：US11930223

    申请日：2007-10-31

    申请人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

    发明人： Dae-young Jeon ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Chul-min Park

    IPC分类号： G11B5/00

    CPC分类号： G11B9/02

    摘要： Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

    摘要翻译： 提供电场读/写装置和驱动电场读/写装置的方法。 该方法包括：电场读/写头，包括设置在源极区域和漏极区域之间的电阻区域和设置在电阻区域上的写入电极，其中所述方法包括：向所述写入电极施加控制电压，其中所述控制 电压小于导致记录介质的极化的阈值电压，并且根据记录介质的电畴的偏振方向根据流过电阻区域的电流量的变化再现记录在记录介质中的数据。

    FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME
    65.
    发明申请
    FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
    电磁信息存储介质及其制造方法

    公开(公告)号：US20080205252A1

    公开(公告)日：2008-08-28

    申请号：US11872059

    申请日：2007-10-15

    申请人： Simon Buehlmann ,  Eun-joo Jang ,  Shin-ae Jun ,  Seung-bum Hong ,  Yong-kwan Kim

    发明人： Simon Buehlmann ,  Eun-joo Jang ,  Shin-ae Jun ,  Seung-bum Hong ,  Yong-kwan Kim

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02

    摘要： A ferroelectric information storage medium having ferroelectric nanodots and a method of manufacturing the ferroelectric information storage medium are provided. The ferroelectric information storage medium includes a substrate, an electrode formed on the substrate, and ferroelectric nanodots formed on the electrode, wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.

    摘要翻译： 提供具有铁电纳米点的铁电信息存储介质和制造铁电信息存储介质的方法。 铁电信息存储介质包括基板，形成在基板上的电极和形成在电极上的铁电纳米点，其中铁电纳米点彼此分离，并且多个铁电纳米点形成单个位区域。

    METHOD OF FABRICATING ELECTRIC FIELD SENSOR HAVING ELECTRIC FIELD SHIELD
    66.
    发明申请
    METHOD OF FABRICATING ELECTRIC FIELD SENSOR HAVING ELECTRIC FIELD SHIELD 失效
    制造电场感应电场传感器的方法

    公开(公告)号：US20080138924A1

    公开(公告)日：2008-06-12

    申请号：US11872065

    申请日：2007-10-15

    申请人： Chul-min PARK ,  Hyoung-soo Ko ,  Seung-bum Hong

    发明人： Chul-min PARK ,  Hyoung-soo Ko ,  Seung-bum Hong

    IPC分类号： H01L21/44

    CPC分类号： G01Q60/30

    摘要： A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

    摘要翻译： 一种制造具有电场屏蔽的电场传感器的方法。 该方法包括提供掺杂有第一杂质的衬底; 在所述基板的突出部的顶点形成具有掺杂有低浓度的第二杂质的电阻区域的电阻端头，以及在所述突出部的两个斜面上掺杂有高浓度的所述第二杂质的第一和第二半导体电极区域 其中所述第二杂质具有与所述第一杂质的极性相反的极性; 在电阻尖端上形成电介质层; 在介电层上形成具有高纵横比的掩模; 在介电层上沉积金属层; 并且通过去除掩模，使形成在电阻区域上的电介质层通过金属层曝光。

    Semiconductor probe, method of manufacturing the same, and method and apparatus for analyzing semiconductor surface using semiconductor probe
    67.
    发明申请
    Semiconductor probe, method of manufacturing the same, and method and apparatus for analyzing semiconductor surface using semiconductor probe 审中-公开
    半导体探针及其制造方法以及使用半导体探针分析半导体表面的方法和装置

    公开(公告)号：US20060076487A1

    公开(公告)日：2006-04-13

    申请号：US11199116

    申请日：2005-08-09

    申请人： Ju-hwan Jung ,  Sung-dong Kim ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Sung-dong Kim ,  Seung-bum Hong

    IPC分类号： G01N23/00

    CPC分类号： G01Q60/48

    摘要： Provided are a semiconductor probe, a method of manufacturing the same, and an apparatus and method for analyzing a semiconductor surface using the semiconductor probe. The semiconductor probe includes a semiconductor tip containing a low concentration of impurities and a cantilever having a conductive area formed in close proximity to the semiconductor tip attached at one end thereof and doped with a high concentration of impurities. The analysis apparatus and method uses high resolution, non-destructive measurement by forming a PN junction between the sample and the semiconductor probe, thereby enabling quantitative extraction of impurity concentration of the sample.

    摘要翻译： 提供半导体探针及其制造方法，以及使用半导体探针分析半导体表面的装置和方法。 半导体探针包括含有低浓度杂质的半导体尖端和具有导电区域的悬臂，该导电区域形成在与其一端附接并掺杂高浓度杂质的半导体尖端附近。 分析装置和方法通过在样品和半导体探针之间形成PN结来进行高分辨率，非破坏性的测量，从而能够定量提取样品的杂质浓度。

    FERROELECTRIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME
    69.
    发明申请
    FERROELECTRIC RECORDING MEDIUM AND METHOD OF MANUFACTURING THE SAME 有权
    电磁记录介质及其制造方法

    公开(公告)号：US20100089867A1

    公开(公告)日：2010-04-15

    申请号：US12637484

    申请日：2009-12-14

    申请人： Simon Buehlmann ,  Seung-bum Hong

    发明人： Simon Buehlmann ,  Seung-bum Hong

    IPC分类号： B44C1/22 ,  B05D5/12

    CPC分类号： G11B9/02 ,  Y10S977/947 ,  Y10T428/31678

    摘要： Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.

    摘要翻译： 提供铁电记录介质及其制造方法。 铁电记录介质包括基板，形成在基板上的多个支撑层，每个支撑层具有至少两个侧表面; 以及形成在支撑层的侧表面上的数据记录层。 第一和第二数据记录层可以分别设置在每个支撑层的两个相对的侧表面上。 支撑层可以是具有至少三个侧表面的多边形柱。 多个支撑层可以以二维阵列的均匀间隔设置。

    Semiconductor probe having embossed resistive tip and method of fabricating the same
    70.
    发明授权
    Semiconductor probe having embossed resistive tip and method of fabricating the same 有权
    具有压电电阻端头的半导体探针及其制造方法

    公开(公告)号：US07671616B2

    公开(公告)日：2010-03-02

    申请号：US11772441

    申请日：2007-07-02

    申请人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

    IPC分类号： G01R31/02 ,  G01N23/00

    CPC分类号： G01Q60/30

    摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

    摘要翻译： 提供具有压花电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域 在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端 掺杂浓度低于第一和第二半导体电极区域。