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    Magnetic memory device and method of fabricating the same
    2.
    发明授权
    Magnetic memory device and method of fabricating the same 有权
    磁记忆装置及其制造方法

    公开(公告)号：US09406873B2

    公开(公告)日：2016-08-02

    申请号：US14319563

    申请日：2014-06-30

    申请人： Shinhee Han ,  Daeeun Jeong ,  Yong Kwan Kim ,  Yoonjong Song

    发明人： Shinhee Han ,  Daeeun Jeong ,  Yong Kwan Kim ,  Yoonjong Song

    IPC分类号： H01L21/02 ,  H01L43/08 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228

    摘要： Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface of the vertical portion. In the lower electrode, the vertical portion has a top surface higher than the horizontal portion and has a top surface including at least two parallel sides and other side at an angle thereto. The MTJ may be provided on the vertical portion of the lower electrode.

    摘要翻译： 提供一种磁存储器件及其制造方法。 该装置可以包括细胞选择装置，磁性隧道结（MTJ）和连接它们的下部电极。 下电极可以包括从垂直部分的侧表面横向延伸的垂直部分和水平部分。 在下部电极中，垂直部分具有高于水平部分的顶表面，并且具有包括至少两个平行边和与其成一定角度的另一侧的顶表面。 MTJ可以设置在下电极的垂直部分上。

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    3.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
    制造半导体器件的方法

    公开(公告)号：US20160203983A1

    公开(公告)日：2016-07-14

    申请号：US14993141

    申请日：2016-01-12

    申请人： EUN-JUNG KIM ,  SUNG-UN KWON ,  YONG-KWAN KIM ,  YOO-SANG HWANG ,  YOUNG-SIK SEO

    发明人： EUN-JUNG KIM ,  SUNG-UN KWON ,  YONG-KWAN KIM ,  YOO-SANG HWANG ,  YOUNG-SIK SEO

    IPC分类号： H01L21/033

    CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10885

    摘要： In a method of manufacturing a semiconductor device, sacrificial layer patterns extending in a first direction are formed on an etch target layer. Preliminary mask patterns are formed on opposite sidewall surfaces of each of the sacrificial layer patterns. A filling layer is formed to fill a space between the preliminary mask patterns. Upper portions of the preliminary mask patterns are etched to form a plurality of mask patterns. Each of the mask patterns is symmetric with respect to a plane passing a center point of each of the mask patterns in a second direction substantially perpendicular to the first direction and extending in the first direction. The sacrificial layer patterns and the filling layer are removed. The etch target layer is etched using the mask patterns as an etching mask to form a plurality of target layer patterns.

    摘要翻译： 在制造半导体器件的方法中，在蚀刻目标层上形成沿第一方向延伸的牺牲层图案。 在每个牺牲层图案的相对侧壁表面上形成初步掩模图案。 形成填充层以填充初步掩模图案之间的空间。 蚀刻初步掩模图案的上部以形成多个掩模图案。 每个掩模图案相对于通过每个掩模图案的中心点的平面在基本上垂直于第一方向并沿第一方向延伸的第二方向上是对称的。 除去牺牲层图案和填充层。 使用掩模图案作为蚀刻掩模蚀刻蚀刻目标层以形成多个目标层图案。

    Variable resistive memory device
    5.
    发明授权
    Variable resistive memory device 有权
    可变电阻式存储器件

    公开(公告)号：US08901526B2

    公开(公告)日：2014-12-02

    申请号：US13753712

    申请日：2013-01-30

    申请人： Ki-hyung Nam ,  Yong-kwan Kim ,  Ho-joong Lee ,  Pulunsol Cho

    发明人： Ki-hyung Nam ,  Yong-kwan Kim ,  Ho-joong Lee ,  Pulunsol Cho

    IPC分类号： H01L29/00 ,  H01L45/00 ,  H01L27/22

    CPC分类号： H01L45/1253 ,  H01L27/228

    摘要： A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.

    摘要翻译： 一种可变电阻存储器件，其能够通过包括具有低接触电阻的接触层来降低接触电阻，所述可变电阻式存储器件包括包括有源区的衬底; 衬底上的栅极线; 电连接到有源区的第一接触层; 电连接到所述第一接触层的存储单元接触插塞; 以及电连接到所述存储单元接触插塞的可变电阻存储单元，其中所述第一接触层相对于所述有源区具有比所述存储单元接触插塞更小的接触电阻。

    SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20140021551A1

    公开(公告)日：2014-01-23

    申请号：US13943208

    申请日：2013-07-16

    申请人： Ki-hyung NAM ,  Yong Kwan KIM ,  Chan Ho PARK ,  Pulunsol CHO

    发明人： Ki-hyung NAM ,  Yong Kwan KIM ,  Chan Ho PARK ,  Pulunsol CHO

    IPC分类号： H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/7831 ,  H01L27/228 ,  H01L27/2454 ,  H01L29/66484 ,  H01L45/06 ,  H01L45/085 ,  H01L45/144 ,  H01L45/145

    摘要： Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes active portions defined in a semiconductor substrate, a device isolation pattern in a trench formed between the active portions, a gate electrode in a gate recess region crossing the active portions and the device isolation pattern, a gate dielectric layer between the gate electrode and an inner surface of the gate recess region, and a first ohmic pattern and a second ohmic pattern on each of the active portions at both sides of the gate electrode, respectively. The first and second ohmic patterns include a metal-semiconductor compound, and a top surface of the device isolation pattern at both sides of the gate recess region is recessed to be lower than a level of a top surface of the semiconductor substrate.

    摘要翻译： 公开了半导体器件及其制造方法。 半导体器件包括限定在半导体衬底中的有源部分，在有源部分之间形成的沟槽中的器件隔离图案，与有源部分交叉的栅极凹部区域中的栅极电极和器件隔离图案，栅极电介质层 电极和栅极凹陷区域的内表面，以及分别在栅电极两侧的每个有源部分上的第一欧姆图案和第二欧姆图案。 第一和第二欧姆模式包括金属半导体化合物，并且栅极凹部区域的两侧的器件隔离图案的顶表面凹陷以低于半导体衬底的顶表面的电平。

    VARIABLE RESISTIVE MEMORY DEVICE
    7.
    发明申请
    VARIABLE RESISTIVE MEMORY DEVICE 有权
    可变电阻存储器件

    公开(公告)号：US20130221306A1

    公开(公告)日：2013-08-29

    申请号：US13753712

    申请日：2013-01-30

    申请人： Ki-hyung NAM ,  Yong-kwan KIM ,  Ho-joong LEE ,  Pulunsol CHO

    发明人： Ki-hyung NAM ,  Yong-kwan KIM ,  Ho-joong LEE ,  Pulunsol CHO

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1253 ,  H01L27/228

    摘要： A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.

    摘要翻译： 一种可变电阻存储器件，其能够通过包括具有低接触电阻的接触层来降低接触电阻，所述可变电阻式存储器件包括包括有源区的衬底; 衬底上的栅极线; 电连接到有源区的第一接触层; 电连接到所述第一接触层的存储单元接触插塞; 以及电连接到所述存储单元接触插塞的可变电阻存储单元，其中所述第一接触层相对于所述有源区具有比所述存储单元接触插塞更小的接触电阻。

    PROJECTOR WITH OFFSET BETWEEN PROJECTION OPTICAL SYSTEM AND DISPLAY UNIT
    8.
    发明申请
    PROJECTOR WITH OFFSET BETWEEN PROJECTION OPTICAL SYSTEM AND DISPLAY UNIT 审中-公开
    投影机投影光学系统和显示单元之间的偏移

    公开(公告)号：US20130044295A1

    公开(公告)日：2013-02-21

    申请号：US13571038

    申请日：2012-08-09

    申请人： Seong-Ha PARK ,  Yong-Kwan Kim ,  Dong-Hi Lee

    发明人： Seong-Ha PARK ,  Yong-Kwan Kim ,  Dong-Hi Lee

    IPC分类号： G03B21/28

    CPC分类号： H04N9/3173 ,  G03B21/2066 ,  G03B21/208

    摘要： A projector for projecting out lights forming an image on an external screen includes at least one light source configured to output a light; a display unit having a plurality of pixel elements and configured to form an image by controlling the pixel elements according to a driving signal; an illumination optical system having at least one lens and mirror arranged on a first optical axis, and configured to output the light output from the light source to the display unit through the mirror; and a projection optical system having at least one lens arranged on a second optical axis intersecting the first optical axis, and configured to externally output the light output from the display unit. A preset offset is provided between the second optical axis of the projection optical system and the central axis of the display unit.

    摘要翻译： 一种用于将形成图像的光投射到外部屏幕上的投影仪包括：至少一个被配置为输出光的光源; 显示单元，具有多个像素元素，并且被配置为根据驱动信号控制像素元素来形成图像; 照明光学系统，其具有布置在第一光轴上的至少一个透镜和反射镜，并且被配置为通过反射镜将从光源输出的光输出到显示单元; 以及投影光学系统，其具有布置在与所述第一光轴相交的第二光轴上的至少一个透镜，并且被配置为从所述显示单元输出的光从外部输出。 在投影光学系统的第二光轴和显示单元的中心轴之间设置预置偏移。