公开(公告)号：US09337306B2

公开(公告)日：2016-05-10

申请号：US14319462

申请日：2014-06-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jianwei Peng ,  Xusheng Wu ,  Hong Yu ,  Zhao Lun

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/6656 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: Approaches for forming an epitaxial (epi) source/drain (S/D) and/or a semiconductor device having an epi S/D are provided. In embodiments of the invention, a first portion of the epi S/D is formed in the S/D region on a fin in a finned substrate. After the first portion is formed, but before completion of the formation of the S/D, a secondary spacer is formed in the S/D region. Then, the remainder portion of the S/D is formed in the S/D region. As a result, the S/D is separated from the gate stack by the secondary spacer.

Abstract translation: 提供了用于形成外延（epi）源极/漏极（S / D）和/或具有外延S / D的半导体器件的方法。 在本发明的实施例中，epi S / D的第一部分形成在鳍状衬底中的翅片上的S / D区域中。 在形成第一部分之后，但在形成S / D之前，在S / D区域中形成二次间隔物。 然后，在S / D区域中形成S / D的剩余部分。 结果，S / D通过辅助间隔件与栅极堆叠分离。

公开(公告)号：US09236312B2

公开(公告)日：2016-01-12

申请号：US14053088

申请日：2013-10-14

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hong Yu ,  Hyucksoo Yang ,  Richard J. Carter

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/28 ,  H01L27/092 ,  H01L27/12 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/762 ,  H01L27/088

CPC classification number: H01L27/0924 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/161 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/66795

Abstract: Approaches for forming an oxide cap to protect a semiconductor device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming an oxide cap over a subset (e.g., SiP regions) of raised source drain (RSD) structures on the set of fins of the FinFET device to mitigate damage during subsequent processing. The oxide spacer is deposited before the removal of a nitride capping layer from the FinFET device (e.g., by a hot phosphorus wash). The oxide cap on top of the RSD structures will be preserved throughout the removal of the nitride capping layer to provide hardmask protection during this process.

Abstract translation: 提供了用于形成氧化物盖以保护半导体器件（例如，鳍式场效应晶体管器件（FinFET））的方法。 具体地，提供了用于在FinFET装置的鳍片组上的凸起的源极漏极（RSD）结构的子集（例如，SiP区域）上形成氧化物盖的方法，以减轻随后的处理期间的损伤。 在从FinFET器件去除氮化物覆盖层（例如通过热磷洗涤）之前，沉积氧化物间隔物。 在整个去除氮化物覆盖层的过程中，RSD结构顶部的氧化物盖将被保留，以提供硬掩模保护。