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公开(公告)号：US20220077255A1
公开(公告)日：2022-03-10
申请号：US17417334
申请日：2020-11-05
Inventor： Wei Li , Jingjing XIA , Bin Zhou , Yang Zhang , Guangyao Li , Wei Song , Xuanang Wang , Qinghe Wang , Liusong Ni , Jun Liu , Liangchen Yan , Ming Wang , Jingang Fang
Abstract: The present disclosure provides an array substrate, a method for manufacturing the array substrate, a display panel and a display device. The array substrate includes: a substrate; a planarization layer on a side of the substrate; a pixel defining layer configured to define a pixel opening region and located on a side of the planarization layer away from the substrate; an anode in the pixel opening region and on a side of the planarization layer away from the substrate. The array substrate further includes an intermediate insulation layer between the planarization layer and the pixel defining layer. The intermediate insulation layer has a chemical polarity between a chemical polarity of the planarization layer and a chemical polarity of the pixel defining layer.
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公开(公告)号：US11244972B2
公开(公告)日：2022-02-08
申请号：US16859558
申请日：2020-04-27
Abstract: An array substrate, a method for manufacturing the same and a display device are provided. The method includes: providing a base substrate; forming a conductive material thin film on the base substrate; forming a first photoresist layer on a side of the conductive material thin film distal to the base substrate; etching the conductive material thin film by using the first photoresist layer as a mask to obtain a first etched pattern; removing third covering portions of the first photoresist layer to obtain a second photoresist layer; and etching the first etched pattern by using the second photoresist layer as a mask to obtain a gate electrode and a signal line.
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公开(公告)号：US20220020867A1
公开(公告)日：2022-01-20
申请号：US17449607
申请日：2021-09-30
Inventor： Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC: H01L29/66 , H01L29/786 , H01L21/44 , H01L21/4763 , H01L21/475 , H01L29/40 , H01L21/4757 , H01L27/12 , H01L21/027 , H01L21/311 , H01L21/3213
Abstract: A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.
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公开(公告)号：US20210335950A1
公开(公告)日：2021-10-28
申请号：US16476474
申请日：2018-09-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Yuankui Ding , Ming Wang
IPC: H01L27/32 , G09G3/3233 , H01L51/56
Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.
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公开(公告)号：US20210333710A1
公开(公告)日：2021-10-28
申请号：US16320041
申请日：2018-05-22
Inventor： Wei Li , Guangcai Yuan , Bin Zhou , Dongfang Wang , Jun Cheng , Yingbin Hu , Jingjing Xia , Tongshang Su
IPC: G03F7/021 , G03F7/039 , G03F7/038 , H01L21/283 , H01L21/3213 , H01L21/027
Abstract: A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.
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Patent Agency Ranking
公开(公告)号：US20210305337A1
公开(公告)日：2021-09-30
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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67.发明授权公开(公告)号：US11018236B2
公开(公告)日：2021-05-25
申请号：US16397386
申请日：2019-04-29
Inventor： Tongshang Su , Dongfang Wang , Ce Zhao , Bin Zhou , Liangchen Yan
IPC: H01L29/45 , G03F7/16 , G03F7/20 , G03F7/26 , H01L21/02 , H01L21/441 , H01L21/467 , H01L21/4763 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , H01L21/027
Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
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公开(公告)号：US10930786B2
公开(公告)日：2021-02-23
申请号：US16554657
申请日：2019-08-29
Inventor： Yuankui Ding , Ce Zhao , Guangcai Yuan , Yingbin Hu , Leilei Cheng , Jun Cheng , Bin Zhou
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
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69.发明授权公开(公告)号：US10818706B2
公开(公告)日：2020-10-27
申请号：US16337544
申请日：2018-05-29
Inventor： Tongshang Su , Guangcai Yuan , Dongfang Wang , Ce Zhao , Bin Zhou , Jun Liu , Jifeng Shao , Qinghe Wang , Yang Zhang
IPC: H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H01L29/417
Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
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公开(公告)号：US10734456B2
公开(公告)日：2020-08-04
申请号：US16488924
申请日：2019-01-31
Inventor： Yongchao Huang , Dongfang Wang , Jun Cheng , Min He , Bin Zhou , Ce Zhao
Abstract: A display panel, a method for manufacturing the display panel, and a display apparatus are provided. The display panel includes a base substrate; a thin film transistor; an OLED structure formed on the thin film transistor including a first and second electrodes arranged opposite to each other and an organic light emitting layer arranged between the first and second electrodes; a light shielding layer arranged between the first electrode and the organic light emitting layer. The light shielding layer includes a first and a second light shielding layers. The first light shielding layer includes a first light shielding portion and a first opening portion corresponding to a pixel area. The second light shielding layer includes a second light shielding portion and a second opening portion corresponding to a pixel area. The second light shielding portion includes a first and second parts.
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