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公开(公告)号：US11700688B2
公开(公告)日：2023-07-11
申请号：US17183909
申请日：2021-02-24
发明人： Yongchao Huang , Qinghe Wang , Haitao Wang , Jun Liu , Jun Cheng , Ce Zhao , Liangchen Yan
CPC分类号： H05K1/09 , H05K3/04 , H05K2201/10128
摘要： The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.
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公开(公告)号：US20190221588A1
公开(公告)日：2019-07-18
申请号：US15580240
申请日：2017-06-23
发明人： Tongshang Su , Jun Cheng , Ce Zhao , Bin Zhou , Dongfang Wang , Guangcai Yuan
IPC分类号： H01L27/12 , G09G3/3283 , G09G3/3291 , G02F1/133
摘要： The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
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3.发明申请公开(公告)号：US20190157308A1
公开(公告)日：2019-05-23
申请号：US16030825
申请日：2018-07-09
发明人： Yuankui Ding , Guangcai Yuan , Ce Zhao , Bin Zhou , Jun Cheng , Zhaofan Liu , Yingbin Hu , Yongchao Huang
IPC分类号： H01L27/12 , H01L29/786 , H01L21/027 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/42 , G03F7/038
摘要： A method of manufacturing an array substrate assembly, an array substrate assembly manufactured by the method, and a display panel including the array substrate assembly are disclosed. The method includes: providing a substrate, the substrate having a first region as a preset semiconductor-removed region, and a second region as a remaining region; forming, in the first region of the substrate, a semiconductor removing layer corrodible by a corrosive solution; and forming a semiconductor layer on the substrate formed with the semiconductor removing layer, so that the semiconductor layer covers the semiconductor removing layer.
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4.发明授权公开(公告)号：US11335710B2
公开(公告)日：2022-05-17
申请号：US16936447
申请日：2020-07-23
发明人： Qinghe Wang , Tongshang Su , Yongchao Huang , Yingbin Hu , Yang Zhang , Haitao Wang , Ning Liu , Guangyao Li , Zheng Wang , Yu Ji , Jinliang Hu , Wei Song , Jun Cheng , Liangchen Yan
摘要： A thin film transistor, a display panel and a preparation method thereof and a display apparatus are provided. The thin film transistor includes: a substrate; a gate metal located on a side of the substrate; a gate insulating layer located on a side of the gate metal away from the substrate; an active layer located on a side of the gate insulating layer away from the substrate; a first metal oxide and a second metal oxide which are located on a side of the active layer away from the substrate and are arranged on a same layer; and a source metal and a drain metal which are located on sides of the first metal oxide and the second metal oxide away from the substrate and are arranged in a same layer.
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公开(公告)号：US10559601B2
公开(公告)日：2020-02-11
申请号：US15580240
申请日：2017-06-23
发明人： Tongshang Su , Jun Cheng , Ce Zhao , Bin Zhou , Dongfang Wang , Guangcai Yuan
IPC分类号： H01L27/14 , H01L29/15 , H01L31/036 , H01L27/12 , G02F1/133 , G09G3/3283 , G09G3/3291 , H01L29/417 , H01L51/05 , H01L27/28 , H01L51/10 , H01L27/32
摘要： The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
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公开(公告)号：US20170263735A1
公开(公告)日：2017-09-14
申请号：US15282270
申请日：2016-09-30
发明人： Jun Cheng
IPC分类号： H01L29/66 , H01L27/12 , H01L21/441 , H01L21/02 , H01L29/786 , H01L21/426
CPC分类号： H01L29/66969 , H01L21/02274 , H01L21/426 , H01L21/441 , H01L29/7869
摘要： A method of manufacturing a thin-film transistor (TFT) and a TFT are provided. The method of manufacturing the TFT includes, after depositing a semiconductor layer, oxidizing regions of the semiconductor layer corresponding to sputtering target gaps, so that oxygen vacancies at the regions corresponding to the sputtering target gaps can be decreased and oxygen vacancies on the semiconductor layer can be more uniform.
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公开(公告)号：US11462602B2
公开(公告)日：2022-10-04
申请号：US16905899
申请日：2020-06-18
发明人： Yongchao Huang , Jun Cheng , Dongfang Wang , Jun Liu , Leilei Cheng , Liangchen Yan
摘要： An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.
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公开(公告)号：US11322561B2
公开(公告)日：2022-05-03
申请号：US16394401
申请日：2019-04-25
发明人： Wei Li , Jingjing Xia , Bin Zhou , Jun Cheng , Yingbin Hu , Wei Song , Guangyao Li , Biao Luo
摘要： The present disclosure provides a photoresist composition, a pixel definition layer, a display substrate and a method for preparing the same, and a display device. The photoresist composition includes: 5 to 25 wt % of polymethacrylate; 1 to 15 wt % of a lyophobic compound; 1 to 5 wt % of a temperature sensitive polymer; 0.5 to 2 wt % of a photoinitiator; and 0.1 to 1 wt % of a monomer.
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公开(公告)号：US10971523B2
公开(公告)日：2021-04-06
申请号：US16405126
申请日：2019-05-07
发明人： Tongshang Su , Dongfang Wang , Jun Cheng , Jun Liu , Qinghe Wang , Guangyao Li , Liangchen Yan
摘要： The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
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公开(公告)号：US11980058B2
公开(公告)日：2024-05-07
申请号：US17486790
申请日：2021-09-27
发明人： Haitao Wang , Qinghe Wang , Jun Wang , Tongshang Su , Jun Cheng
IPC分类号： H10K59/121 , H10K59/12 , H10K59/126 , H10K59/131 , H10K71/00
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/126 , H10K59/131 , H10K71/00 , H10K59/1201
摘要： A display substrate, a preparation method thereof, and a display apparatus are provide. The display substrate includes: a base substrate, an active layer disposed on the base substrate, a first gate insulating layer disposed on the active layer, a first conductive layer disposed on the first gate insulating layer, and a second conductive layer disposed on the first conductive layer and electrically connected with the first conductive layer; an orthographic projection of the first conductive layer on the base substrate does not overlap with an orthographic projection of the active layer on the base substrate; the second conductive layer includes gates; orthographic projections of the gates on the base substrate and the orthographic projection of the active layer on the base substrate have an overlap area; and the display substrate further includes: at least one insulating layer located between the first conductive layer and the gates.
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