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161 条记录 (耗时 0.036 秒)

    ArF photoresist copolymers
    61.
    发明授权
    ArF photoresist copolymers 有权
    ArF光刻胶共聚物

    公开(公告)号：US06808859B1

    公开(公告)日：2004-10-26

    申请号：US09605206

    申请日：2000-06-27

    申请人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  C08F232/04

    摘要： A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.

    摘要翻译： 由一种或多种羧基取代的双环烯烃单体制备光致抗蚀剂共聚物，该共聚物用于制备使用深紫外（ArF）作为光源的亚微光刻工艺的光致抗蚀剂。 除了具有高耐蚀刻性和耐热性之外，光致抗蚀剂对基材具有良好的粘附性，并且可以在TMAH溶液中显影。

    Photoresist composition containing photo radical generator with photoacid generator
    62.
    发明授权
    Photoresist composition containing photo radical generator with photoacid generator 失效
    含有光致酸发生剂的光自由基发生剂的光致抗蚀剂组合物

    公开(公告)号：US06692891B2

    公开(公告)日：2004-02-17

    申请号：US09879325

    申请日：2001-06-12

    申请人： Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7038

    CPC分类号： G03F7/0045 ,  G03F7/0395 ,  Y10S430/115 ,  Y10S430/117 ,  Y10S430/122 ,  Y10S430/124 ,  Y10S430/126

    摘要： The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.

    摘要翻译： 本发明涉及含有光自由基发生剂的光致抗蚀剂组合物，更具体地说，涉及光致抗蚀剂组合物，其包含（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）光自由基发生剂 。 由于光致抗蚀剂上部相对于光致抗蚀剂的下部较高浓度的酸，本发明的光致抗蚀剂组合物减少或防止形成倾斜图案。

    Copolymer resin, preparation thereof, and photoresist using the same
    63.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 有权

    公开(公告)号：US06608158B2

    公开(公告)日：2003-08-19

    申请号：US10055674

    申请日：2002-01-22

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F3208

    CPC分类号： C08F232/08 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/115

    摘要： The present invention relates to a copolymer resin for a photoresist used in far ultraviolet ray such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of mono-methyl cis-5-norbonen-endo-2,3-dicarboxylate unit to a structure of norbornene-maleic anhydride copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and settles the problem of offensive odor occurred in the course of copolymer resin synthesis. Further, as the resin composition can be easily controlled due to the molecular structure, the resin can be manufactured in a large scale.

    Photoresist monomers, polymers thereof and photoresist compositions using the same
    64.
    发明授权
    Photoresist monomers, polymers thereof and photoresist compositions using the same 失效
    光致抗蚀剂单体，其聚合物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06573012B1

    公开(公告)日：2003-06-03

    申请号：US09630620

    申请日：2000-08-02

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

    IPC分类号： G03F7039

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

    摘要： The present invention provides compounds represented by formulas 1a and 1b, and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

    摘要翻译： 本发明提供由式1a和1b表示的化合物和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

    Cross-linker for photoresist, and process for forming a photoresist pattern using the same
    65.
    发明授权
    Cross-linker for photoresist, and process for forming a photoresist pattern using the same 失效
    用于光致抗蚀剂的交联剂，以及使用其形成光刻胶图案的方法

    公开(公告)号：US06465147B1

    公开(公告)日：2002-10-15

    申请号：US09468984

    申请日：1999-12-21

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C173

    CPC分类号： G03F7/0382 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： The present invention relates to a cross-linker for a photoresist polymer, and a process for forming a negative photoresist pattern by using the same. Preferred cross-linkers according to the invention comprise compounds having two or more aldehyde groups, such as glutaric dialdehyde, 1,4-cyclohexane dicarboxaldehyde, or the like. Further, a photoresist composition is disclosed, which comprises (i) a cross-linker as described above, (ii) a photoresist copolymer comprising a hydroxyl-containing alicyclic monomer, (iii) a photoacid generator and (iv) an organic solvent, as well as a process for forming a photoresist pattern using such photoresist composition.

    摘要翻译： 本发明涉及光致抗蚀剂聚合物的交联剂，以及通过使用该光致抗蚀剂聚合物形成负性光致抗蚀剂图案的方法。 根据本发明的优选的交联剂包含具有两个或多个醛基的化合物，例如戊二醛，1,4-环己烷二甲醛等。此外，公开了光致抗蚀剂组合物，其包含（i）交联剂 如上所述，（ii）包含含羟基的脂环族单体，（iii）光酸产生剂和（iv）有机溶剂）的光致抗蚀剂共聚物以及使用这种光致抗蚀剂组合物形成光致抗蚀剂图案的方法。

    Photoresist monomer, polymer thereof and photoresist composition containing it
    66.
    发明授权
    Photoresist monomer, polymer thereof and photoresist composition containing it 失效
    光致抗蚀剂单体，其聚合物和含有它的光致抗蚀剂组合物

    公开(公告)号：US06426171B1

    公开(公告)日：2002-07-30

    申请号：US09627714

    申请日：2000-07-28

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D295/088 ,  G03F7/0395

    摘要： The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

    摘要翻译： 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    67.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 失效
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06368770B1

    公开(公告)日：2002-04-09

    申请号：US09621125

    申请日：2000-07-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/122

    摘要： The present invention provides a novel photoresist monomer, photoresist copolymer derived from the same, and the photoresist composition comprising the same. In particular, the present invention provides a photoresist monomer of the formula: wherein, A, A′, X, m and n are those defined herein. The photoresist composition of the present invention has an excellent etching and heat resistance, and enhances the resolution and profile of the photoresist film.

    摘要翻译： 本发明提供了一种新型光致抗蚀剂单体，衍生自其的光致抗蚀剂共聚物和包含该光致抗蚀剂的光致抗蚀剂组合物。 特别地，本发明提供下式的光致抗蚀剂单体：其中A，A'，X，m和n是本文定义的那些。 本发明的光致抗蚀剂组合物具有优异的蚀刻和耐热性，并且提高了光致抗蚀剂膜的分辨率和轮廓。

    Copolymer resin, preparation thereof, and photoresist using the same
    69.
    发明授权
    Copolymer resin, preparation thereof, and photoresist using the same 有权
    共聚物树脂及其制备方法和使用其的光致抗蚀剂

    公开(公告)号：US06248847B1

    公开(公告)日：2001-06-19

    申请号：US09208650

    申请日：1998-12-10

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F2606

    CPC分类号： C07D309/12 ,  C07C69/013 ,  C07C69/54 ,  C07C69/757 ,  G03F7/0045

    摘要： The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbonyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbonyl group, and shows excellent resolution of 0.15 &mgr;m in practical experiment of patterning.

    摘要翻译： 本发明涉及用于超短波光源如KrF或ArF的共聚物树脂，其制备方法和包含相同树脂的光致抗蚀剂。 由于将（甲基）丙烯酸去羰基酯单元引入到光致抗蚀剂共聚物的结构中，本发明的共聚物树脂可以容易地通过常规的自由基聚合制备。 该树脂在193nm波长处具有高透明度，由于在诺乃诺基中具有亲水性官能团，提供了更高的抗蚀刻性和增强的粘合强度，并且在实际的图案化实验中显示出优异的0.15μm分辨率。