利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

88 条记录 (耗时 0.03 秒)

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    1.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Photoresist monomer comprising bisphenol derivatives and polymers thereof
    2.
    发明授权
    Photoresist monomer comprising bisphenol derivatives and polymers thereof 失效
    包含双酚衍生物的光敏单体及其聚合物

    公开(公告)号：US06627383B2

    公开(公告)日：2003-09-30

    申请号：US09973630

    申请日：2001-10-09

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03C1492

    CPC分类号： G03F7/0046 ,  C07C69/65 ,  C07C69/653 ,  C08F20/30 ,  G03F7/039 ,  G03F7/0392 ,  Y02P20/55 ,  Y10S430/108

    摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions using the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at the wavelength of 193 nm, 157 nm and 13 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2, R3, Y, W, m and n are as defined in the specification.

    摘要翻译： 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和使用其的光致抗蚀剂组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在193nm，157nm和13nm波长处具有低吸光度，因此适用于在制造中使用诸如VUV（157nm）和EUV（13nm）的紫外光源的光刻工艺 用于高集成半导体器件的分钟电路。其中R1，R2，R3，Y，W，m和n如本说明书中所定义。

    Photoresist monomer, polymer thereof and photoresist composition containing it
    4.
    发明授权
    Photoresist monomer, polymer thereof and photoresist composition containing it 失效
    光致抗蚀剂单体，其聚合物和含有它的光致抗蚀剂组合物

    公开(公告)号：US06448352B1

    公开(公告)日：2002-09-10

    申请号：US09621068

    申请日：2000-07-21

    申请人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： C08F2608

    CPC分类号： C08F32/08 ,  G03F7/0395

    摘要： The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

    摘要翻译： 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体包括胺官能团和酸不稳定保护基团，并且由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same
    6.
    发明授权
    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
    具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06586619B2

    公开(公告)日：2003-07-01

    申请号：US10079753

    申请日：2002-02-19

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： C07C6974

    CPC分类号： C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

    摘要翻译： 本发明涉及可用于形成聚合物的新型单体，其可用于使用光谱的远紫外区域中的光源的光刻法，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH2，CH2CH2，氧或硫; andi为0或1〜2的整数。

    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same
    7.
    发明授权
    Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
    具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物

    公开(公告)号：US06410670B1

    公开(公告)日：2002-06-25

    申请号：US09383861

    申请日：1999-08-26

    申请人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： C08J13208

    CPC分类号： C07D493/08 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

    摘要翻译： 本发明涉及新颖的单体及其聚合物，它们可用于光光谱在光谱的远紫外区域中的光刻，其共聚物和由其制备的光致抗蚀剂组合物。 本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚， 取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH 2，CH 2 CH 2，氧或硫; i为0或1〜2的整数。

    Photoresist monomers, polymers thereof, and photoresist compositions containing the same
    8.
    发明授权
    Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
    光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物

    公开(公告)号：US06235448B1

    公开(公告)日：2001-05-22

    申请号：US09448911

    申请日：1999-11-24

    申请人： Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Geun Su Lee ,  Min Ho Jung ,  Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： G03C172

    CPC分类号： G03F7/0045 ,  G03F7/038 ,  G03F7/265

    摘要： The present invention relates to monomers and polymers prepared therefrom, which are suitable for forming photoresist compositions employed in lithography processes using a deep ultraviolet light source, in particular an ArF light source. According to the present invention, novel monomers represented by Chemical Formula 1, are provided: wherein R represents a C1-C10 alkyl group, and m is the number 1 or 2. as well as copolymers prepared by using said monomers as represented by Chemical Formula 8: wherein R represents a C1-C10 alkyl group; R′ represents H or —COOH; m is the number 1 or 2; n is a number from 1 to 3; and X represents CH2, NH or O; and a, b and c represent the number of repeating of the respective monomers.

    摘要翻译： 本发明涉及由其制备的单体和聚合物，其适用于在使用深紫外光源，特别是ArF光源的光刻工艺中用于形成光刻胶组合物。根据本发明，由化学式1， 提供：其中R表示C1-C10烷基，m是数字1或2.以及通过使用由化学式8表示的所述单体制备的共聚物：其中R表示C1-C10烷基; R'表示H或-COOH; m是数字1或2; n是从1到3的数字; X表示CH 2，NH或O; a，b和c表示各单体的重复次数。

    Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same
    9.
    发明授权
    Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 有权
    氧杂双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法

    公开(公告)号：US6150069A

    公开(公告)日：2000-11-21

    申请号：US311488

    申请日：1999-05-13

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： C07D493/08 ,  C08F22/06 ,  C08F32/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.

    摘要翻译： 本发明涉及氧杂双环化合物及其制备方法。 本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且 表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。