摘要:
A semiconductor device includes: an element isolation region formed in a substrate that defines an active region, a conductive layer formed on the active region, a first insulating film formed between the active region and the conductive layer and having a first thickness, and a second insulating film formed between the active region and the conductive layer and spans at least part of a boundary between the active region and the element isolation region and having a second thickness which is greater than the first thickness.
摘要:
A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要:
A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.
摘要:
A conductor base coupled to a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor. The present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要:
An air circuit breaker is provided wherein a rotational force is accurately discontinued at a movement completion time of assuming a connected position, a test position or a disconnected position by a breaker body in the process of withdrawing in and withdrawing out the breaker body from a cradle whereas a driving connection is performed if necessary, the breaker including a coupling device capable of being moved to a position where a withdraw-in and withdraw-out driving force generated by a manipulating handle is transmitted to a withdraw in and withdraw out apparatus and to a position where the withdraw-in and withdraw-out driving force is stopped of transmission.
摘要:
A method for forming an interlayer insulating film of a semiconductor device comprises forming an active pattern over a substrate, forming a spin-on dielectric film over the substrate including the active pattern, and irradiating an electron beam over the spin on dielectric film to form an interlayer insulating film.
摘要:
Disclosed therein are a conductor base and a finger module of an air circuit breaker. Since the connector of the conductor base has the curved surface formed on a side of an end portion thereof and tooth-coupled with the contactor of the finger module, the contactor of the finger module has another curved surface corresponding to the curved surface of the connector and the contactor is elastically supported in a vertical direction by the plate spring to allow both end portions of the contactor to perform a vertical elastic movement relative to a longitudinal center of the contactor, the present invention can prevent damages due to a mechanical impact between the connector of the conductor base and the contactor of the finger module, which may occur while the breaker terminal is inserted into the finger module, to thereby extend the lifespan of the conductor base and the finger module.
摘要:
A semiconductor device, including a transistor having low threshold voltage and high breakdown voltage, includes a first gate electrode, a second gate electrode, and a third gate electrode arranged on a predetermined first, second, and third region of a semiconductor substrate, respectively, a first gate insulating layer, a second gate insulating layer, and a third gate insulating layer, which are interposed between the first, second and third gate electrode and the semiconductor substrate, respectively, and first, second, and third junction regions arranged in the first, second, and third region of the semiconductor substrate, respectively, on both sides of the first, second and third gate electrode, respectively, wherein a thickness of the first gate insulating layer is greater than a thickness of either of the second or third gate insulating layers, and wherein a structure of the first junction region and a structure of the third junction region are the same.
摘要:
A leakage current occurring on a boundary of a trench isolation region and an active region can be prevented in a Metal Oxide Semiconductor (MOS) Field Effect transistor, and a fabricating method thereof is provided. The transistor includes the trench isolation region disposed in a predetermined portion of a semiconductor substrate to define the active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower surface of the gate electrode around the boundary of the trench isolation region and the active region.
摘要:
Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.