公开(公告)号：US20070120160A1

公开(公告)日：2007-05-31

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US20060148119A1

公开(公告)日：2006-07-06

申请号：US11360750

申请日：2006-02-23

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02161

摘要： The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS type photodiode with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

摘要翻译： 本发明是CMOS图像传感器及其制造方法。 本发明提供了一种提高具有无边界接触的CMOS型光电二极管的量子效率的有效结构。 图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。 电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。 制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

公开(公告)号：US20050062118A1

公开(公告)日：2005-03-24

申请号：US10669516

申请日：2003-09-24

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/00 ,  H01L21/82 ,  H01L27/14 ,  H01L27/146 ,  H01L29/82 ,  H01L31/00 ,  H04N5/335

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02161

摘要： The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

摘要翻译： 本发明是CMOS图像传感器及其制造方法。 本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。 图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。 电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。 制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

公开(公告)号：US08124495B2

公开(公告)日：2012-02-28

申请号：US11627883

申请日：2007-01-26

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/76

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US07479403B2

公开(公告)日：2009-01-20

申请号：US11488611

申请日：2006-07-19

申请人： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14672

摘要： A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.

摘要翻译： 一个具有固定光电二极管结构的光电传感器，与沟槽隔离结构集成。 光传感器包括第一导电类型的衬底，衬底中的至少一个沟槽，第一导电类型的至少一个掺杂区域和第二导电类型的至少一个掺杂区域。 第一导电类型的每个掺杂区域在相应的沟槽之下。 第二导电类型的每个掺杂区夹在相应的掺杂区和第一导电类型的衬底之间。 第一或第二导电类型的任何掺杂区域的边缘不延伸到沟槽角。 还提供了制造光传感器的方法。

公开(公告)号：US07553689B2

公开(公告)日：2009-06-30

申请号：US11181189

申请日：2005-07-13

申请人： Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

发明人： Jeng-Shyan Lin ,  Chien-Hsien Tseng ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung ,  Hung-Jen Hsu

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632

摘要： A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.

摘要翻译： 一种半导体器件，包括其中形成有光电传感器的半导体衬底; 覆盖衬底的第一层，第一层包括具有大致凹形形状的表面的部分，其为在其上形成的微透镜的负形状; 覆盖第一层的第二层，第二层包括垂直对准并与大致凹形的表面配合的大致凸形的部分，大体上凸形的部分被构造和布置以限定微透镜，定位成使得平行光通过 通过微透镜收敛并撞击光电传感器。

公开(公告)号：US07507596B2

公开(公告)日：2009-03-24

申请号：US11360750

申请日：2006-02-23

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chen ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chen ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02161

摘要： The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

摘要翻译： 本发明是CMOS图像传感器及其制造方法。 本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。 图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。 电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。 制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

公开(公告)号：US07232697B2

公开(公告)日：2007-06-19

申请号：US10818312

申请日：2004-04-05

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L21/339

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。

公开(公告)号：US07038232B2

公开(公告)日：2006-05-02

申请号：US10669516

申请日：2003-09-24

申请人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chen ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chen ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L29/06

CPC分类号： H01L31/103 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L31/02161

摘要： The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

摘要翻译： 本发明是CMOS图像传感器及其制造方法。 本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。 图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。 电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。 制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

公开(公告)号：US20050133837A1

公开(公告)日：2005-06-23

申请号：US10818312

申请日：2004-04-05

申请人： Tzu Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

发明人： Tzu Hsu ,  Dun-Nian Yaung ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Chien-Hsien Tseng ,  Jeng-Shyan Lin

IPC分类号： H01L29/84

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.

摘要翻译： 提供半导体器件及其制造方法。 在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。 在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。 从隔离结构的至少一部分去除第一层。 在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。 第三折射率基本上类似于第一折射率。