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263 条记录 (耗时 0.045 秒)

    Lighting device and method of lighting
    61.
    发明授权
    Lighting device and method of lighting 有权
    照明装置和照明方法

    公开(公告)号：US07852010B2

    公开(公告)日：2010-12-14

    申请号：US11755162

    申请日：2007-05-30

    申请人： Gerald H. Negley

    发明人： Gerald H. Negley

    IPC分类号： H05B37/00

    CPC分类号： H05B33/0827

    摘要： A lighting device, comprising at least first and second current regulators, each switchable among two settings, and at least first and second groups of solid state light emitters. If the first regulator is in a first setting, a first current is supplied to the first group and a second current is supplied to the second group, and if the first regulator is in a second setting, a third current is supplied to the first group and a fourth current is supplied to the second group. In some embodiments, a ratio of the third current divided by the first current differ's from a ratio of the fourth current divided by the second current by at least 5%. Also, a method comprising substantially simultaneously adjusting current supplied to a first group, and adjusting a current supplied to a second group.

    摘要翻译： 一种照明装置，包括至少第一和第二电流调节器，每个可在两个设置之间切换，以及至少第一和第二组固态发光器。 如果第一调节器处于第一设置，则第一电流被提供给第一组，并且第二电流被提供给第二组，并且如果第一调节器处于第二设置，则第三电流被提供给第一组 并且第四电流被提供给第二组。 在一些实施例中，除以第一电流的第三电流的比值与第四电流除以第二电流的比率至少为5％不同。 而且，一种方法包括基本上同时调节提供给第一组的电流，以及调节提供给第二组的电流。

    LIGHTING DEVICE AND LIGHTING METHOD
    62.
    发明申请
    LIGHTING DEVICE AND LIGHTING METHOD 审中-公开
    照明设备和照明方法

    公开(公告)号：US20100254130A1

    公开(公告)日：2010-10-07

    申请号：US12815846

    申请日：2010-06-15

    申请人： Antony Paul VAN DE VEN ,  Gerald H. Negley

    发明人： Antony Paul VAN DE VEN ,  Gerald H. Negley

    IPC分类号： F21K2/00

    CPC分类号： F21K99/00 ,  F21K9/00 ,  F21K9/60 ,  F21V9/30 ,  G09G3/2003 ,  G09G3/3208 ,  G09G2320/0242 ,  G09G2340/06 ,  H05B33/0857

    摘要： A lighting device comprising sources of visible light comprising solid state light emitters and/or luminescent materials emitting three or four different hues. A first group of the sources, when illuminated, emit light of two hues which, if combined, would produce illumination having coordinates within an area on a 1931 CIE Chromaticity Diagram defined by points having coordinates: 0.59, 0.24; 0.40, 0.50; 0.24, 0.53; 0.17, 0.25; and 0.30, 0.12. A second group of the sources is of an additional hue. Mixing light from the first and second groups produces illumination within ten MacAdam ellipses of the blackbody locus. Also, a lighting device comprising a white light source having a CRI of 75 or less and at least one solid state light emitters and/or luminescent material. Also, methods of lighting.

    摘要翻译： 包括可见光源的照明装置，包括发射三种或四种不同色调的固态发光体和/或发光材料。 第一组照明时，发出两个色调的光，如果组合，将产生在由坐标为0.59,0.24的点定义的1931年CIE色度图中的区域内的坐标的照明; 0.40，0.50; 0.24，0.53; 0.17,0.25; 和0.30，0.12。 第二组来源有额外的色调。 来自第一和第二组的混合光在黑体轨迹的十个MacAdam椭圆内产生照明。 而且，一种包括CRI为75以下的白色光源和至少一个固态发光体和/或发光材料的照明装置。 另外，照明方法。

    SOLID STATE EMITTER PACKAGE INCLUDING RED AND BLUE EMITTERS
    63.
    发明申请
    SOLID STATE EMITTER PACKAGE INCLUDING RED AND BLUE EMITTERS 有权
    固体发射器包装包括红色和蓝色发射体

    公开(公告)号：US20100140634A1

    公开(公告)日：2010-06-10

    申请号：US12614553

    申请日：2009-11-09

    申请人： Antony Paul van de Ven ,  Gerald H. Negley

    发明人： Antony Paul van de Ven ,  Gerald H. Negley

    IPC分类号： H01L33/00

    CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L23/49541 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2224/4554

    摘要： A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm. A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element.

    摘要翻译： 固态发射器封装包括主要为红色固体发射体，其具有在590nm至680nm内的峰值发射，主要具有在400nm至480nm内具有峰值发射的蓝色固体发射体，以及共同引线框架，公共衬底， 和公共反射器，其中封装没有任何主要为绿色固体发射体，其具有510nm和575nm之间的峰值发射。 固态发射器封装可以包括与固态发射极封装相关联的至少一个导电路径，其不与固态发射极封装的任何固态发射极电连通，这种导电路径易于包含跳线 或控制元件。

    LED fabrication via ion implant isolation
    69.
    发明授权
    LED fabrication via ion implant isolation 有权
    通过离子注入隔离制造LED

    公开(公告)号：US07338822B2

    公开(公告)日：2008-03-04

    申请号：US10840463

    申请日：2004-05-06

    申请人： Yifeng Wu ,  Gerald H. Negley ,  David B. Slater, Jr. ,  Valeri F. Tsvetkov ,  Alexander Suvorov

    发明人： Yifeng Wu ,  Gerald H. Negley ,  David B. Slater, Jr. ,  Valeri F. Tsvetkov ,  Alexander Suvorov

    IPC分类号： H01L21/00

    CPC分类号： H01L33/145 ,  H01L24/73 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02P80/30 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

    摘要翻译： 半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结， 型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。 在p型外延层上形成金属接触层。 在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。 可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

    Etching of substrates of light emitting devices
    70.
    发明授权
    Etching of substrates of light emitting devices 有权
    蚀刻发光器件的基板

    公开(公告)号：US07202181B2

    公开(公告)日：2007-04-10

    申请号：US10811350

    申请日：2004-03-26

    申请人： Gerald H. Negley

    发明人： Gerald H. Negley

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L33/20 ,  H01L33/0095 ,  Y10S438/931

    摘要： Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide substrate. The etch may remove damage from the substrate that results from other processing of the substrate, such as damage from sawing the substrate. The etch may remove an amorphous region of silicon carbide in the substrate.

    摘要翻译： 发光器件的制造包括蚀刻发光器件的衬底。 蚀刻可以是足以增加通过基底提取的光量的水性蚀刻。 蚀刻可以是碳化硅衬底的直接水性蚀刻。 蚀刻可以消除由衬底的其他处理导致的衬底的损伤，例如锯切衬底的损伤。 蚀刻可以去除衬底中的碳化硅的非晶区域。