公开(公告)号：US20120070695A1

公开(公告)日：2012-03-22

申请号：US13235237

申请日：2011-09-16

申请人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Tadaomi Daibou ,  Tadashi Kai ,  Toshihiko Nagase ,  Kenji Noma ,  Hiroaki Yoda

IPC分类号： G11B5/66

CPC分类号： H01L43/02 ,  G01R33/091 ,  G01R33/093 ,  G11B5/66 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/30 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

摘要翻译： 根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层 该记录层与设置有中间层的记录层的表面相对。 记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层， 第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。 第一缓冲层包含氮化合物。

公开(公告)号：US20120069642A1

公开(公告)日：2012-03-22

申请号：US13236589

申请日：2011-09-19

申请人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

发明人： Koji Ueda ,  Tadashi Kai ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Eiji Kitagawa ,  Tadaomi Daibou ,  Makoto Nagamine ,  Hiroaki Yoda

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括电极层，第一磁性层，第二磁性层和非磁性层。 电极层包括包括Mo，Nb和W中的至少一种的金属层。第一磁性层设置在与金属层接触的金属层上，并且在垂直于膜的方向上具有易磁化轴 平面，并且在磁化方向上是可变的。 第二磁性层设置在第一磁性层上，并且在垂直于膜平面的方向上具有易磁化轴，并且在磁化方向上是不变的。 非磁性层设置在第一和第二磁性层之间。 第一磁性层的磁化方向由穿过第一磁性层，非磁性层和第二磁性层的电流而变化。

公开(公告)号：US20120068139A1

公开(公告)日：2012-03-22

申请号：US13043064

申请日：2011-03-08

申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC分类号： H01L45/00

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

摘要翻译： 根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08530887B2

公开(公告)日：2013-09-10

申请号：US13050692

申请日：2011-03-17

申请人： Eiji Kitagawa ,  Tadashi Kai ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Hiroaki Yoda

发明人： Eiji Kitagawa ,  Tadashi Kai ,  Tadaomi Daibou ,  Yutaka Hashimoto ,  Hiroaki Yoda

IPC分类号： H01L27/15

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.

摘要翻译： 根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

公开(公告)号：US20130020659A1

公开(公告)日：2013-01-24

申请号：US13628724

申请日：2012-09-27

申请人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

发明人： Tadaomi Daibou ,  Eiji Kitagawa ,  Yutaka Hashimoto ,  Masaru Tokou ,  Toshihiko Nagase ,  Katsuya Nishiyama ,  Koji Ueda ,  Makoto Nagamine ,  Tadashi Kai ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/10

摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.

摘要翻译： 根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。 第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜 第一界面磁性膜和第二界面磁性膜。

公开(公告)号：US08716819B2

公开(公告)日：2014-05-06

申请号：US13429088

申请日：2012-03-23

申请人： Eiji Kitagawa ,  Naoharu Shimomura ,  Tsuneo Inaba

发明人： Eiji Kitagawa ,  Naoharu Shimomura ,  Tsuneo Inaba

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

摘要： According to one embodiment, a magnetic random access memory includes a plurality of magnetoresistance elements. The plurality of magnetoresistance elements each include a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization direction, and a first nonmagnetic layer formed between the recording layer and the reference layer. The recording layer is physically separated for each of the plurality of magnetoresistance elements. The reference layer and the first nonmagnetic layer continuously extend over the plurality of magnetoresistance elements.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括多个磁阻元件。 多个磁阻元件各自包括垂直于膜表面的磁各向异性的记录层和可变磁化方向，具有垂直于膜表面的磁各向异性的参考层和不变的磁化方向，以及形成在第一非磁性层之间的第一非磁性层 记录层和参考层。 对于多个磁阻元件中的每一个物理地分离记录层。 参考层和第一非磁性层在多个磁阻元件上连续延伸。

公开(公告)号：US08670268B2

公开(公告)日：2014-03-11

申请号：US13427732

申请日：2012-03-22

申请人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

摘要翻译： 根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。 第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。 第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。 第一非磁性层设置在第一和第二磁性层之间。 第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。 第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

公开(公告)号：US20130010532A1

公开(公告)日：2013-01-10

申请号：US13427732

申请日：2012-03-22

申请人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

发明人： Toshihiko Nagase ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadashi Kai ,  Koji Ueda ,  Daisuke Watanabe

IPC分类号： G11C11/15 ,  H01L29/82 ,  B82Y99/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

公开(公告)号：US20130001713A1

公开(公告)日：2013-01-03

申请号：US13424072

申请日：2012-03-19

申请人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

发明人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。 第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。 第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。 第三和第四磁性层具有与存储层的磁化反平行的磁化。 第二非磁性层位于存储和第三磁性层之间。 第三非磁性层位于参考和第四磁性层之间。 第四磁性层的厚度小于第三磁性层的厚度。

公开(公告)号：US08669628B2

公开(公告)日：2014-03-11

申请号：US13424072

申请日：2012-03-19

申请人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

发明人： Koji Ueda ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Daisuke Watanabe ,  Eiji Kitagawa ,  Tadashi Kai

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.

摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。 第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。 第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。 第三和第四磁性层具有与存储层的磁化反平行的磁化。 第二非磁性层位于存储和第三磁性层之间。 第三非磁性层位于参考和第四磁性层之间。 第四磁性层的厚度小于第三磁性层的厚度。