利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

88 条记录 (耗时 0.046 秒)

    APPARATUS FOR MANUFACTURING SEMICONDUCTOR
    62.
    发明申请
    APPARATUS FOR MANUFACTURING SEMICONDUCTOR 有权
    制造半导体的装置

    公开(公告)号：US20120103260A1

    公开(公告)日：2012-05-03

    申请号：US13347896

    申请日：2012-01-11

    申请人： Sang Joon PARK ,  Young Jun Kim

    发明人： Sang Joon PARK ,  Young Jun Kim

    IPC分类号： C23C16/455

    CPC分类号： H01L21/67757 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/68771

    摘要： Disclosed is an apparatus for manufacturing semiconductors, to be used for various processes in semiconductor manufacture processing, such as the forming of layers on wafers. A tube has a processing space therein and a discharge hole at a side thereof. A boat can be loaded and unloaded through a lower opening of the tube. Susceptors are vertically separated from one another and supported within the boat, have a central hole defined in the respective centers of rotation thereof, and have a plurality of wafers stacked around a central perimeter on the respective top surfaces thereof. A supply tube is installed at the top of the boat and passes through each central hole of the susceptors, and defines discharge holes for discharging processing gas supplied from the outside onto each top surface of the susceptors.

    摘要翻译： 公开了一种半导体制造装置，用于半导体制造加工中的各种工艺，例如在晶片上形成层。 管内具有处理空间，其一侧具有排出孔。 船可以通过管的下部开口装载和卸载。 感受器彼此垂直分离并支撑在船内，具有限定在其各自旋转中心中的中心孔，并且在其各自的顶表面上具有围绕中心周边堆叠的多个晶片。 供应管安装在船的顶部并穿过基座的每个中心孔，并且限定用于将从外部供应的处理气体排放到基座的每个顶表面上的排放孔。

    Controlling data transmission rate on the reverse link for each mobile station in a dedicated manner
    64.
    发明授权
    Controlling data transmission rate on the reverse link for each mobile station in a dedicated manner 有权
    以专门的方式控制每个移动台的反向链路的数据传输速率

    公开(公告)号：US07898952B2

    公开(公告)日：2011-03-01

    申请号：US11710443

    申请日：2007-02-26

    申请人： Ki Jun Kim ,  Young Cho Kim ,  Young Jo Lee ,  Jong Hoe An ,  Young Woo Yun ,  Young Jun Kim

    发明人： Ki Jun Kim ,  Young Cho Kim ,  Young Jo Lee ,  Jong Hoe An ,  Young Woo Yun ,  Young Jun Kim

    IPC分类号： H04J1/16 ,  H04J3/14

    CPC分类号： H04W28/22

    摘要： The data transmission rate on the reverse link in a mobile communications system is controlled by determining an interference level at a base station due to signals from all mobile stations served by the base station, and determining a transmission energy level required for each mobile station. The interference level is compared with the transmission energy level to obtain a comparison result for each mobile station, and each mobile adjusts its data transmission rate based upon the comparison result, which is sent via a common channel on a forward link to each mobile station in a dedicated manner. Thereafter, packet data is transmitted on the reverse link in accordance with the adjusting so that data throughput can be maximized.

    摘要翻译： 移动通信系统中的反向链路上的数据传输速率由于由基站服务的所有移动台的信号确定基站处的干扰电平以及确定每个移动台所需的传输能量级来进行控制。 将干扰电平与传输能级进行比较，以获得每个移动台的比较结果，并且每个移动台基于比较结果来调整其数据传输速率，该比较结果通过前向链路上的公共信道发送到每个移动站 专门的方式。 此后，根据调整在反向链路上发送分组数据，使得可以最大化数据吞吐量。

    Sensor structure and method of fabricating the same
    65.
    发明授权
    Sensor structure and method of fabricating the same 有权
    传感器结构及其制造方法

    公开(公告)号：US07824618B2

    公开(公告)日：2010-11-02

    申请号：US10913422

    申请日：2004-08-09

    申请人： Yong Shin Kim ,  Yun Tae Kim ,  Hae Sik Yang ,  Young Jun Kim ,  Seung Chul Ha ,  Yoon Seok Yang

    发明人： Yong Shin Kim ,  Yun Tae Kim ,  Hae Sik Yang ,  Young Jun Kim ,  Seung Chul Ha ,  Yoon Seok Yang

    IPC分类号： G01N27/00

    CPC分类号： G01N27/126

    摘要： Provided is a sensor structure comprising a heater and a temperature sensor at the center of a membrane having a well structure, allowing a temperature to be rapidly controlled with low power, and the object is analyzed using a conductivity change measured at two or more substrate temperatures with a pair of detecting electrode and a detecting layer implemented on the heater, wherein the sensing layer can include a conductive particle and a non-conductive organic composite.

    摘要翻译： 提供了一种传感器结构，其包括加热器和在具有井结构的膜的中心处的温度传感器，允许以低功率快速控制温度，并且使用在两个或更多个基板温度下测量的电导率变化来分析物体 具有一对检测电极和在加热器上实施的检测层，其中感测层可以包括导电颗粒和非导电有机复合材料。

    Method for Generating a Pseudo-Esn in Mobile Communication
    67.
    发明申请
    Method for Generating a Pseudo-Esn in Mobile Communication 审中-公开
    在移动通信中生成伪网络的方法

    公开(公告)号：US20080287101A1

    公开(公告)日：2008-11-20

    申请号：US11815543

    申请日：2006-02-07

    申请人： Jong Hoe An ,  Young Jun Kim ,  Chan Ho Kyung

    发明人： Jong Hoe An ,  Young Jun Kim ,  Chan Ho Kyung

    IPC分类号： H04M1/68

    CPC分类号： H04W8/26

    摘要： In generating a pseudo terminal identifier (pseudo-ESN; pseudo-Electronic Serial Number), a pseudo terminal identifier generating method includes the steps of generating a first configuration code by hashing a mobile equipment identifier (MEID), selecting a second configuration code from codes not used as an electronic serial number (ESN), and generating the pseudo terminal identifier by setting MSB (most significant bit) to the first configuration code and by setting LSB (least significant bit) to the second configuration code. Accordingly, the present invention provides a pseudo terminal identifier after a related art ESN is exhausted.

    摘要翻译： 在生成伪终端标识符（伪ESN;伪电子序列号）时，伪终端标识符生成方法包括以下步骤：通过对移动设备标识符（MEID）进行散列来生成第一配置码，从代码中选择第二配置码 不用作电子序列号（ESN），并且通过将MSB（最高有效位）设置为第一配置码并且通过将LSB（最低有效位）设置为第二配置码来生成伪终端标识符。 因此，本发明在相关技术ESN耗尽之后提供伪终端标识符。

    Method on Forming an Isolation Film or a Semiconductor Device
    68.
    发明申请
    Method on Forming an Isolation Film or a Semiconductor Device 审中-公开
    形成绝缘膜或半导体器件的方法

    公开(公告)号：US20080242046A1

    公开(公告)日：2008-10-02

    申请号：US12112679

    申请日：2008-04-30

    申请人： Pil Geun Song ,  Young Jun Kim ,  Sang Wook Park

    发明人： Pil Geun Song ,  Young Jun Kim ,  Sang Wook Park

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224

    摘要： A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.

    摘要翻译： 公开了一种在半导体器件中形成隔离膜的方法。 所公开的方法包括在其上形成图案化焊盘膜的半导体衬底的预定区域上执行图案化工艺，形成限定非活性区域和有源区域的沟槽，在包括沟槽的整个表面上形成衬垫膜，形成 用于仅在沟槽内进行沟槽埋置的绝缘膜，剥离除了沟槽内部形成的剩余衬垫膜和形成在衬垫膜下方的图案化衬垫膜，在整个表面上形成牺牲膜，并对 其中形成牺牲膜的整个表面直到有源区的半导体衬底被暴露，从而形成与有源区的半导体衬底没有拓扑结构差异的隔离膜。

    Method of Forming an Isolation Film in a Semiconductor Device
    69.
    发明申请
    Method of Forming an Isolation Film in a Semiconductor Device 审中-公开
    在半导体器件中形成绝缘膜的方法

    公开(公告)号：US20080206955A1

    公开(公告)日：2008-08-28

    申请号：US12112725

    申请日：2008-04-30

    申请人： Pil Geun Song ,  Young Jun Kim ,  Sang Wook Park

    发明人： Pil Geun Song ,  Young Jun Kim ,  Sang Wook Park

    IPC分类号： H01L21/762 ,  H01L21/306

    CPC分类号： H01L21/76224

    摘要： A method of forming an isolation film in a semiconductor device is disclosed. The disclosed method includes performing a patterning process on a predetermined region of a semiconductor substrate in which a patterned pad film is formed, forming a trench defining an inactive region and an active region, forming a liner film on the entire surface including the trench, forming an insulating film for trench burial only within the trench, stripping the remaining liner film formed except for the inside of the trench and the patterned pad film formed below the liner film, forming a sacrificial film on the entire surface, and performing a polishing process on the entire surface in which the sacrificial film is formed until the semiconductor substrate of the active region is exposed, thereby forming the isolation film having no topology difference with the semiconductor substrate of the active region.

    摘要翻译： 公开了一种在半导体器件中形成隔离膜的方法。 所公开的方法包括在其上形成图案化焊盘膜的半导体衬底的预定区域上执行图案化工艺，形成限定非活性区域和有源区域的沟槽，在包括沟槽的整个表面上形成衬垫膜，形成 用于仅在沟槽内进行沟槽埋置的绝缘膜，剥离除了沟槽内部形成的剩余衬垫膜和形成在衬垫膜下方的图案化衬垫膜，在整个表面上形成牺牲膜，并对 其中形成牺牲膜的整个表面直到有源区的半导体衬底被暴露，从而形成与有源区的半导体衬底没有拓扑结构差异的隔离膜。

    Controlling data transmission rate on the reverse link for each mobile station in a dedicated manner
    70.
    发明授权
    Controlling data transmission rate on the reverse link for each mobile station in a dedicated manner 有权
    以专门的方式控制每个移动台的反向链路的数据传输速率

    公开(公告)号：US07215653B2

    公开(公告)日：2007-05-08

    申请号：US10071243

    申请日：2002-02-11

    申请人： Ki Jun Kim ,  Young Cho Kim ,  Young Jo Lee ,  Jong Hoe An ,  Young Woo Yun ,  Young Jun Kim

    发明人： Ki Jun Kim ,  Young Cho Kim ,  Young Jo Lee ,  Jong Hoe An ,  Young Woo Yun ,  Young Jun Kim

    IPC分类号： H04Q7/00

    CPC分类号： H04W28/22

    摘要： The data transmission rate on the reverse link in a mobile communications system is controlled by determining an interference level at a base station due to signals from all mobile stations served by the base station, and determining a transmission energy level required for each mobile station. The interference level is compared with the transmission energy level to obtain a comparison result for each mobile station, and each mobile adjusts its data transmission rate based upon the comparison result, which is sent via a common channel on a forward link to each mobile station in a dedicated manner. Thereafter, packet data is transmitted on the reverse link in accordance with the adjusting so that data throughput can be maximized.

    摘要翻译： 移动通信系统中的反向链路上的数据传输速率由于由基站服务的所有移动台的信号确定基站处的干扰电平以及确定每个移动台所需的传输能量级来进行控制。 将干扰电平与传输能级进行比较，以获得每个移动台的比较结果，并且每个移动台基于比较结果来调整其数据传输速率，该比较结果通过前向链路上的公共信道发送到每个移动站 专门的方式。 此后，根据调整在反向链路上发送分组数据，使得可以最大化数据吞吐量。