Method And System For Large Silicon Photonic Interposers By Stitching
    65.
    发明申请
    Method And System For Large Silicon Photonic Interposers By Stitching 有权
    通过缝合制作大型硅光子插件的方法与系统

    公开(公告)号:US20160359568A1

    公开(公告)日:2016-12-08

    申请号:US15171233

    申请日:2016-06-02

    Applicant: Luxtera, Inc.

    CPC classification number: H04B10/801 G02B6/1228 G02B6/34 G02B6/4279

    Abstract: Methods and systems for large silicon photonic interposers by stitching are disclosed and may include, in an integrated optical communication system including CMOS electronics die coupled to a silicon photonic interposer, where the interposer includes a plurality of reticle sections: communicating an optical signal between two of the plurality of reticle sections utilizing a waveguide. The waveguide may include a taper region at a boundary between the two reticle sections, the taper region expanding an optical mode of the communicated optical signal prior to the boundary and narrowing the optical mode after the boundary. A continuous wave (CW) optical signal may be received in a first of the reticle sections from an optical source external to the interposer. The CW optical signal may be received in the interposer from an optical source assembly coupled to a grating coupler in the first of the reticle sections in the silicon photonic interposer.

    Abstract translation: 公开了用于通过缝合的大型硅光子插入器的方法和系统,并且可以包括在包括耦合到硅光子插入器的CMOS电子器件裸片的集成光学通信系统中,其中插入器包括多个标线器部分:在两个 所述多个标线片部分利用波导。 波导可以在两个标线片部分之间的边界处包括锥形区域,锥形区域在边界之前扩展所传送的光信号的光学模式,并且在边界之后使光学模式变窄。 连续波(CW)光信号可以从插入器外部的光源接收在第一掩模版区段中。 CW光信号可以在耦合到硅光子插入器中的第一掩模版部分中的光栅耦合器的光源组件的插入器中接收。

    Coupling optical signals into silicon optoelectronic chips
    66.
    发明授权
    Coupling optical signals into silicon optoelectronic chips 有权
    将光信号耦合到硅光电芯片

    公开(公告)号:US09109948B2

    公开(公告)日:2015-08-18

    申请号:US14513886

    申请日:2014-10-14

    Applicant: Luxtera, Inc.

    Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip in a photonic transceiver, wherein photonic, electronic, or optoelectronic devices may be integrated in layers on a front surface of the CMOS photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be bonded to a second chip. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

    Abstract translation: 公开了一种用于将光信号耦合到硅光电芯片的方法和系统,并且可以包括将一个或多个光信号耦合到光子收发器中的CMOS光子芯片的背表面,其中光子,电子或光电器件可以集成在层 在CMOS光子芯片的正面上。 诸如光栅耦合器的光耦合器可以在前表面中接收光信号。 光信号可以经由光纤和/或光源组件耦合到芯片的后表面中。 光信号可以经由在芯片中蚀刻的光路耦合到光耦合器,其可以用二氧化硅再填充。 芯片可以结合到第二芯片。 光信号可以经由金属反射器反射回到光耦合器,金属反射器可以集成在芯片上的电介质层中。

    Method and system for grating couplers incorporating perturbed waveguides

    公开(公告)号:US10509170B2

    公开(公告)日:2019-12-17

    申请号:US16227890

    申请日:2018-12-20

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for grating couplers incorporating perturbed waveguides are disclosed and may include in a semiconductor photonics die, communicating optical signals into and/or out of the die utilizing a grating coupler on the die, where the grating coupler comprises perturbed waveguides. The perturbed waveguides may include rows of continuous waveguides with scatterers extending throughout a length of the perturbed waveguides a variable width along their length. The grating coupler may comprise a single polarization grating coupler comprising perturbed waveguides and a non-perturbed grating. The grating coupler may comprise a polarization splitting grating coupler (PSGC) that includes two sets of perturbed waveguides at a non-zero angle, or a plurality of non-linear rows of discrete shapes. The PSGC may comprise discrete scatterers at an intersection of the sets of perturbed waveguides. The grating coupler may comprise individual scatterers between the perturbed waveguides.

    Method And System For Stabilized Directional Couplers

    公开(公告)号:US20190324199A1

    公开(公告)日:2019-10-24

    申请号:US16460471

    申请日:2019-07-02

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for stabilized directional couplers are disclosed and may include a system comprising first and second directional couplers formed by first and second waveguides, where one of the waveguides may comprise a length extender between the directional couplers. The directional couplers may be formed by reduced spacing between the waveguides on opposite sides of the length extender. An input optical signal may be communicated into one of the waveguides, where at least a portion of the input optical signal may be coupled between the waveguides in the first directional coupler and at least a portion of the coupled optical signal may be coupled between the waveguides in the second directional coupler. Optical signals may be communicated out of the system with magnitudes at a desired percentage of the input optical signal. The length extender may add phase delay for signals in one of the first and second waveguides.

    Method and system for a vertical junction high-speed phase modulator

    公开(公告)号:US10444593B2

    公开(公告)日:2019-10-15

    申请号:US15694236

    申请日:2017-09-01

    Applicant: Luxtera, Inc.

    Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

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