公开(公告)号：US07428044B2

公开(公告)日：2008-09-23

申请号：US11601038

申请日：2006-11-16

申请人： Vi Vuong ,  Yan Chen ,  Holger Tuitje

发明人： Vi Vuong ,  Yan Chen ,  Holger Tuitje

IPC分类号： G01J1/10

CPC分类号： G01B11/24 ,  G01B21/045 ,  G01N21/276 ,  G01N21/4788 ,  G01N21/93 ,  G01N21/956

摘要： Drift in an optical metrology tool is compensated for by obtaining a first measured diffraction signal and a second measured diffraction signal of a first calibration structure mounted on the optical metrology tool. The first and second measured diffraction signals were measured using the optical metrology tool. The second measured diffraction signal was measured later in time than the first measured diffraction signal. A first drift function is generated based on the difference between the first and second measured diffraction signals. A third measured diffraction signal is obtained of a first structure formed on a first wafer using the optical metrology tool. A first adjusted diffraction signal is generated by adjusting the third measured diffraction signal using the first drift function.

摘要翻译： 通过获得安装在光学计量学工具上的第一校准结构的第一测量衍射信号和第二测量衍射信号来补偿光学测量工具中的漂移。 使用光学测量工具测量第一和第二测量的衍射信号。 时间上测量的第二测量的衍射信号比第一测量的衍射信号。 基于第一和第二测量的衍射信号之间的差异产生第一漂移函数。 使用光学测量工具获得在第一晶片上形成的第一结构的第三测量的衍射信号。 通过使用第一漂移函数调整第三测量的衍射信号来产生第一调节的衍射信号。

公开(公告)号：US20080212080A1

公开(公告)日：2008-09-04

申请号：US12026485

申请日：2008-02-05

申请人： Hanyou Chu ,  Vi Vuong ,  Yan Chen

发明人： Hanyou Chu ,  Vi Vuong ,  Yan Chen

IPC分类号： G01N21/00

CPC分类号： H01L22/20

摘要： To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

摘要翻译： 为了测量半导体制造工艺的工艺参数，使用工艺参数的第一值在第一区域上执行制造工艺。 使用过程参数的第二值在第二区域上执行制造过程。 使用光学测量工具获得第一区域的第一测量。 使用光学测量工具获得第二区域的第二测量。 基于第一测量确定第一区域的一个或多个光学性质。 基于第二测量来确定第二区域的一个或多个光学特性。 制造工艺在第三区域进行。 使用光学测量工具获得第三个区域的第三个测量值。 基于第三测量和所确定的第一和第二区域的光学特性之间的关系确定过程参数的第三值。

公开(公告)号：US07327475B1

公开(公告)日：2008-02-05

申请号：US11639515

申请日：2006-12-15

申请人： Hanyou Chu ,  Vi Vuong ,  Yan Chen

发明人： Hanyou Chu ,  Vi Vuong ,  Yan Chen

IPC分类号： G06F19/00 ,  H01L21/66

CPC分类号： H01L22/20

摘要： To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

摘要翻译： 为了测量半导体制造工艺的工艺参数，使用工艺参数的第一值在第一区域上执行制造工艺。 使用过程参数的第二值在第二区域上执行制造过程。 使用光学测量工具获得第一区域的第一测量。 使用光学测量工具获得第二区域的第二测量。 基于第一测量确定第一区域的一个或多个光学性质。 基于第二测量来确定第二区域的一个或多个光学特性。 制造工艺在第三区域进行。 使用光学测量工具获得第三个区域的第三个测量值。 基于第三测量和所确定的第一和第二区域的光学特性之间的关系确定过程参数的第三值。

公开(公告)号：US07092110B2

公开(公告)日：2006-08-15

申请号：US10397631

申请日：2003-03-25

申请人： Raghu Balasubramanian ,  Sanjay Yedur ,  Vi Vuong ,  Nickhil Jakatdar

发明人： Raghu Balasubramanian ,  Sanjay Yedur ,  Vi Vuong ,  Nickhil Jakatdar

IPC分类号： G01B11/14 ,  G01B7/00 ,  G01N21/86 ,  G01R31/26

CPC分类号： G06T7/0006 ,  G01N21/4788 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/70625 ,  G06T2207/30148

摘要： A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

摘要翻译： 基于具有一个或多个参数的模板来选择用于晶片中结构的光学测量的轮廓模型，该模板包括与晶片中的结构相关联的过程和建模属性的特征。 该过程包括执行轮廓建模过程以基于具有包括过程和建模属性的特征的一个或多个参数的模板来生成晶片结构的轮廓模型。 轮廓模型包括与结构的尺寸相关联的一组几何参数。 可以进一步根据终止标准测试生成的简档模型，并修改一个或多个参数。 可以重复执行建模过程以生成简档模型并测试生成的简档模型的过程，直到满足终止标准。