公开(公告)号：US5766997A

公开(公告)日：1998-06-16

申请号：US721938

申请日：1996-09-27

Applicant: Nobuyoshi Takeuchi

Inventor： Nobuyoshi Takeuchi

IPC: H01L21/336 ,  H01L29/423 ,  H01L21/8247

CPC classification number: H01L29/66825 ,  H01L29/42324

Abstract: A field oxide is selectively formed on a silicon substrate. A first gate oxide is formed on the silicon substrate. Formed on the first gate oxide film is a floating gate which is comprised of a stack of a polysilicon film and a silicide layer with different thicknesses at different locations. Oxide spacer are formed on the side portions of the floating gate. A source region and a drain region are formed on the silicon substrate with a channel region disposed therebetween. Silicide layers are respectively formed on the source region and the drain region. The depth of the drain side silicide layer is shallower than the depth of the source side silicide layer. A step is provided on the surface of the floating gate. A control gate is formed on the floating gate via a gate insulator film. This structure provides a floating gate type non-volatile semiconductor memory device having a silicide layer which is optimized in accordance with the characteristics that are respectively needed for the source region and the drain region.

Abstract translation: 在硅衬底上选择性地形成场氧化物。 在硅衬底上形成第一栅极氧化物。 形成在第一栅极氧化膜上的是浮置栅极，其由不同位置处具有不同厚度的多晶硅膜和硅化物层构成。 氧化物间隔物形成在浮动栅极的侧部上。 源极区域和漏极区域形成在硅衬底上，其间设置有沟道区域。 在源极区和漏极区分别形成硅化物层。 漏侧硅化物层的深度比源侧硅化物层的深度浅。 在浮动门的表面设置一个台阶。 控制栅经栅极绝缘膜形成在浮栅上。 该结构提供了具有硅化物层的浮栅型非易失性半导体存储器件，该硅化物层根据源极区和漏极区分别需要的特性优化。

公开(公告)号：US5583396A

公开(公告)日：1996-12-10

申请号：US214193

申请日：1994-03-17

Applicant: Omura Hideaki ,  Masayuki Wakamiya ,  Nobuyoshi Takeuchi ,  Munehiro Tabata

Inventor： Omura Hideaki ,  Masayuki Wakamiya ,  Nobuyoshi Takeuchi ,  Munehiro Tabata

IPC: H05B41/292 ,  H05B41/38 ,  H05B37/00

CPC classification number: H05B41/2928 ,  H05B41/38

Abstract: A metal halide lamp is employed, as a light source, in an optical device such as, for example, an illuminator or an image display. The optical device includes a discharge tube filled with mercury, at least one rare gas, and at least one metal halide, and a pair of electrodes spaced from each other and enclosed in the discharge tube. The optical device also includes an electric circuit, electrically connected to the pair of electrodes, for starting the discharge tube by applying thereto a higher voltage than a voltage to be applied at a steady state to thereby cause an arc discharge in the discharge tube. When the lamp is turned off, power supply thereto from the electric circuit is temporarily interrupted, and when the lamp cools after a first time interval has elapsed subsequent to the interruption of the power supply, a starting voltage is applied to the lamp via the pair of electrodes for a second time interval to cause redischarge. Thereafter, the power supply to the lamp is interrupted after the second time interval has elapsed, to thereby turn off the lamp.

Abstract translation: 在诸如照明器或图像显示器的光学装置中使用金属卤化物灯作为光源。 光学装置包括填充有汞，至少一种稀有气体和至少一种金属卤化物的放电管，以及一对彼此间隔开并封闭在放电管中的电极。 光学装置还包括电连接到一对电极的电路，用于通过施加比在稳定状态下施加的电压更高的电压来启动放电管，从而在放电管中引起电弧放电。 当灯关闭时，从电路向其供电的电源暂时中断，并且当电源中断之后经过第一时间间隔之后，当灯冷却时，起动电压经由该灯施加到灯 的电极引起再次充电。 此后，经过第二时间间隔后，灯的电源中断，从而关闭灯。