DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20230189585A1

    公开(公告)日:2023-06-15

    申请号:US17943133

    申请日:2022-09-12

    Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.

    DISPLAY DEVICE
    62.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230180545A1

    公开(公告)日:2023-06-08

    申请号:US18161844

    申请日:2023-01-30

    CPC classification number: H10K59/126 H10K59/1315 H01L27/124

    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220165759A1

    公开(公告)日:2022-05-26

    申请号:US17469217

    申请日:2021-09-08

    Abstract: A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220115364A1

    公开(公告)日:2022-04-14

    申请号:US17471581

    申请日:2021-09-10

    Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

    DISPLAY DEVICE
    66.
    发明申请

    公开(公告)号:US20220085071A1

    公开(公告)日:2022-03-17

    申请号:US17232211

    申请日:2021-04-16

    Abstract: An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210327983A1

    公开(公告)日:2021-10-21

    申请号:US16952762

    申请日:2020-11-19

    Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

    DISPLAY DEVICE
    68.
    发明申请

    公开(公告)号:US20210143239A1

    公开(公告)日:2021-05-13

    申请号:US17002113

    申请日:2020-08-25

    Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.

    DISPLAY DEVICE
    70.
    发明申请

    公开(公告)号:US20210020872A1

    公开(公告)日:2021-01-21

    申请号:US16837540

    申请日:2020-04-01

    Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

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