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公开(公告)号:US20230189585A1
公开(公告)日:2023-06-15
申请号:US17943133
申请日:2022-09-12
Applicant: Samsung Display Co., Ltd.
Inventor: Yun Yong NAM , So Young KOO , Eok Su KIM , Hyung Jun KIM , Jun Hyung LIM , Kyung Jin JEON
CPC classification number: H01L27/3276 , H01L51/56 , H01L51/5253 , H01L51/524 , H01L27/3246 , H01L27/3272
Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.
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公开(公告)号:US20230180545A1
公开(公告)日:2023-06-08
申请号:US18161844
申请日:2023-01-30
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Yeon Hong KIM , Eun Hye KO , Eun Hyun KIM , Kyoung Won LEE , Sun Hee LEE , Jun Hyung LIM
IPC: H10K59/126 , H10K59/131
CPC classification number: H10K59/126 , H10K59/1315 , H01L27/124
Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
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公开(公告)号:US20230135686A1
公开(公告)日:2023-05-04
申请号:US17944888
申请日:2022-09-14
Inventor: Hyung Jun KIM , Hyungjun KIM , Jun Hyung LIM , Hwi YOON , Seung-min CHUNG
Abstract: A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.
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公开(公告)号:US20220165759A1
公开(公告)日:2022-05-26
申请号:US17469217
申请日:2021-09-08
Applicant: Samsung Display Co., LTD.
Inventor: Kyung Jin JEON , So Young KOO , Eok Su KIM , Hyung Jun KIM , Yun Yong NAM , Jun Hyung LIM
Abstract: A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.
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公开(公告)号:US20220115364A1
公开(公告)日:2022-04-14
申请号:US17471581
申请日:2021-09-10
Applicant: Samsung Display Co., LTD.
Inventor: Kyung Jin JEON , So Young KOO , Eok Su KIM , Hyung Jun KIM , Yun Yong NAM , Jun Hyung LIM
Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.
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公开(公告)号:US20220085071A1
公开(公告)日:2022-03-17
申请号:US17232211
申请日:2021-04-16
Applicant: Samsung Display Co., LTD. , Industry-University Cooperation Foundation Hanyang University ERICA Campus
Inventor: Hye Lim CHOI , Saeroonter OH , Kihwan KIM , Joon Seok PARK , Ji Hwan LEE , Jun Hyung LIM
IPC: H01L27/12
Abstract: An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.
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公开(公告)号:US20210327983A1
公开(公告)日:2021-10-21
申请号:US16952762
申请日:2020-11-19
Applicant: Samsung Display Co., LTD.
Inventor: Myoung Hwa KIM , Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Hye Lim CHOI
IPC: H01L27/32
Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.
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公开(公告)号:US20210143239A1
公开(公告)日:2021-05-13
申请号:US17002113
申请日:2020-08-25
Applicant: Samsung Display Co., Ltd.
Inventor: Myeong Ho KIM , Jay Bum KIM , Kyoung Seok SON , Sun Hee LEE , Seung Jun LEE , Seung Hun LEE , Jun Hyung LIM
IPC: H01L27/32
Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.
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公开(公告)号:US20210134851A1
公开(公告)日:2021-05-06
申请号:US17039474
申请日:2020-09-30
Applicant: Samsung Display Co., LTD.
Inventor: Kyung Jin JEON , Eok Su KIM , Joon Seok PARK , So Young KOO , Tae Sang KIM , Jun Hyung LIM
IPC: H01L27/12
Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.
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公开(公告)号:US20210020872A1
公开(公告)日:2021-01-21
申请号:US16837540
申请日:2020-04-01
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Seok PARK , Yeon Keon MOON , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC: H01L51/56 , G09G3/3266 , G09G3/325 , H01L29/786 , H01L29/49 , G09G3/3291
Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.
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