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公开(公告)号:US20210233963A1
公开(公告)日:2021-07-29
申请号:US17232658
申请日:2021-04-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang LEE , Dong-Seok LEEM , Kwang Hee LEE , Sung Young YUN , Yong Wan JIN
IPC: H01L27/30 , G02B5/20 , H01L27/146 , H01L51/44
Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.
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公开(公告)号:US20210231491A1
公开(公告)日:2021-07-29
申请号:US17227926
申请日:2021-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Seok LEEM , Gae Hwang LEE , Yong Wan JIN , Tae Yon LEE
Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.
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公开(公告)号:US20210083199A1
公开(公告)日:2021-03-18
申请号:US17022222
申请日:2020-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyesung CHOI , Hwang Suk KIM , Ohkyu KWON , Takkyun RO , Kwang Hee LEE , Dong-Seok LEEM , Bum Woo PARK
IPC: H01L51/00 , C07D513/04 , C07F7/08
Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.
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公开(公告)号:US20210036251A1
公开(公告)日:2021-02-04
申请号:US16944873
申请日:2020-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hwang Suk KIM , Ohkyu KWON , Bum Woo PARK , Kwang Hee LEE , Dong-Seok LEEM , Hyesung CHOI , Dongseon LEE
Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.
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公开(公告)号:US20190319062A1
公开(公告)日:2019-10-17
申请号:US16196229
申请日:2018-11-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Hee LEE , Gae Hwang LEE , Sung Young YUN , Dong-Seok LEEM , Yong Wan JIN
IPC: H01L27/146 , G02B5/20
Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate that is stacked with the photoelectric device and includes first and second photo-sensing devices configured to sense light associated with second and third colors of three primary colors. The first and second photo-sensing devices may have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. At least one part of a thickness area of the first photo-sensing device may overlap at least one part of a thickness area of the second photo-sensing device in a parallel direction extending substantially parallel to the surface of the semiconductor substrate.
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公开(公告)号:US20190074327A1
公开(公告)日:2019-03-07
申请号:US15914725
申请日:2018-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung Young YUN , Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM , Yong Wan JIN
CPC classification number: H01L27/307 , H01L31/14 , H01L51/0046 , H01L51/0062 , H01L51/0071 , H01L51/0094 , H01L51/4253 , H01L51/44 , H01L51/441
Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes at least one first photoelectric conversion material having a peak absorption wavelength (λmax1) of less than about 540 nm and a at least one second photoelectric conversion material having a peak absorption wavelength (λmax2) of greater than or equal to about 540 nm, and an image sensor, and an electronic device.
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公开(公告)号:US20170338271A1
公开(公告)日:2017-11-23
申请号:US15673906
申请日:2017-08-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Wan JIN , Kyu Sik KIM , Kyung Bae PARK , Kwang Hee LEE , Dong-Seok LEEM , Deukseok CHUNG
IPC: H01L27/146
CPC classification number: H01L27/14645 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14636
Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
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68.
公开(公告)号:US20170331050A1
公开(公告)日:2017-11-16
申请号:US15591259
申请日:2017-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tadao YAGI , Xavier BULLIARD , Hyesung CHOI , Rie SAKURAI , Hiromasa SHIBUYA , Youn Hee LIM , Sung Young YUN , Gae Hwang LEE , Kwang Hee LEE , Dong-Seok LEEM
IPC: H01L51/00 , H01L51/44 , H01L51/42 , C07D421/04 , H01L27/30 , C07D513/04 , C07D471/04 , C07D421/14 , C07D421/06
CPC classification number: H01L51/0072 , C07D421/00 , C07D421/04 , C07D421/06 , C07D421/14 , C07D471/04 , C07D513/04 , H01L27/307 , H01L51/0053 , H01L51/0061 , H01L51/0062 , H01L51/0067 , H01L51/0071 , H01L51/424 , H01L51/441 , H01L51/447
Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
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公开(公告)号:US20170330911A1
公开(公告)日:2017-11-16
申请号:US15664182
申请日:2017-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwang Hee LEE , Gae Hwang LEE , Sung Young YUN , Dong-Seok LEEM , Xavier BULLIARD , Yong Wan JIN
IPC: H01L27/146
CPC classification number: H01L27/14621 , H01L27/14645 , H01L27/14647 , H01L27/14685
Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
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公开(公告)号:US20170141143A1
公开(公告)日:2017-05-18
申请号:US15283743
申请日:2016-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong Wan JIN , Kwang Hee LEE , Gae Hwang LEE , Kyung Bae PARK , Dong-Seok LEEM , Yeong Suk CHOI
IPC: H01L27/146
CPC classification number: H01L27/146 , H01L27/14647 , H01L27/14692
Abstract: An image sensor includes a semiconductor substrate integrated with at least one of a first photo-sensing device that may sense a first wavelength spectrum of visible light and a second photo-sensing device that may sense second wavelength spectrum of visible light, and a third photo-sensing device on the semiconductor substrate that may selectively sense third wavelength spectrum of visible light in a longer wavelength spectrum of visible light than the first wavelength spectrum of visible light and the second wavelength spectrum of visible light. The first photo-sensing device and the second photo-sensing device may overlap with each other in a thickness direction of the semiconductor substrate.
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