公开(公告)号：US08830413B2

公开(公告)日：2014-09-09

申请号：US13950990

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F1/136

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract translation: 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US08610118B2

公开(公告)日：2013-12-17

申请号：US13729473

申请日：2012-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC: H01L33/20

CPC classification number: H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract translation: 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

公开(公告)号：US20130128199A1

公开(公告)日：2013-05-23

申请号：US13729473

申请日：2012-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC: G02F1/1333 ,  H01L27/15

CPC classification number: H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Abstract translation: 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

公开(公告)号：US20130112980A1

公开(公告)日：2013-05-09

申请号：US13721142

申请日：2012-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi Fukunaga ,  Junya Maruyama

IPC: H01L27/15

CPC classification number: H01L27/3276 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/15 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3295 ,  H01L29/78645 ,  H01L29/78669 ,  H01L51/0097 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/525 ,  H01L51/5271 ,  H01L51/56 ,  H01L2251/5315 ,  Y10S428/917

Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.