公开(公告)号：US08798226B2

公开(公告)日：2014-08-05

申请号：US13760147

申请日：2013-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sho Nagao ,  Yoshifumi Tanada ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC: G11C19/00

CPC classification number: G11C19/28 ,  G09G3/3688 ,  G09G2310/0275 ,  G11C19/00

Abstract: A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node α is raised. When the potential of the node α reaches (VDD−VthN), the node α becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105. An output at the subsequent stage is then inputted to a TFT 103 to turn the TFT 103 ON, while the potential of the node α of TFTs 102 and 106 is dropped to turn the TFT 105 OFF. As a result, the potential of the output node becomes Low level.

Abstract translation: 一种显示装置的驱动电路，其包括单导电类型的TFT并输出具有正常振幅的输出信号。 脉冲被输入到TFT101和104，使TFT导通，并且节点α的电位升高。 当节点α的电位达到（VDD-VthN）时，节点α变为浮动状态。 因此，随着时钟信号变为高电平，TFT 105导通，输出节点的电位升高。 另一方面，随着输出节点的电位升高，由于电容装置107的操作，TFT 105的栅电极的电位进一步上升，使得TFT 105的栅电极的电位变为 高于（VDD + VthN）。 因此，输出节点的电位升高到VDD，而不会由于TFT 105的阈值电压引起电压降。然后，后级的输出被输入到TFT103，使TFT103导通，同时电位 TFT102和106的节点α的下降以使TFT 105关闭。 结果，输出节点的电位变为低电平。

公开(公告)号：US08659517B2

公开(公告)日：2014-02-25

申请号：US13675399

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/30 ,  G09G3/36

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Abstract translation: 提供了通过抑制初始发光元件劣化而实现长寿命并且能够进行高占空比驱动的发光器件。 通过形成反向偏置电源线（112）和反向偏压TFT（108），一次对一个EL元件（109）施加反向偏置。 因此，可以与图像信号的写入，发光，擦除等的操作同步地执行反向偏置应用。 因此，在保持与常规驱动方法相同的占空比的情况下，可以实现反向偏置应用。

公开(公告)号：US20130251091A1

公开(公告)日：2013-09-26

申请号：US13760147

申请日：2013-02-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shou Nagao ,  Yoshifumi Tanada ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC: G11C19/28

CPC classification number: G11C19/28 ,  G09G3/3688 ,  G09G2310/0275 ,  G11C19/00

Abstract: A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node α is raised. When the potential of the node α reaches (VDD−VthN), the node α becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105. An output at the subsequent stage is then inputted to a TFT 103 to turn the TFT 103 ON, while the potential of the node α of TFTs 102 and 106 is dropped to turn the TFT 105 OFF. As a result, the potential of the output node becomes Low level.

Abstract translation: 一种显示装置的驱动电路，其包括单导电类型的TFT并输出具有正常振幅的输出信号。 一个脉冲被输入到TFT101和104，使TFT导通，并且提高节点α的电位。 当节点α的电位达到（VDD-VthN）时，节点α变为浮动状态。 因此，随着时钟信号变为高电平，TFT 105导通，输出节点的电位升高。 另一方面，随着输出节点的电位升高，由于电容装置107的操作，TFT 105的栅电极的电位进一步上升，使得TFT 105的栅电极的电位变为 高于（VDD + VthN）。 因此，输出节点的电位升高到VDD，而不会由于TFT 105的阈值电压引起电压降。然后，后级的输出被输入到TFT103，使TFT103导通，同时电位 的TFT102和106的节点α的下降以使TFT 105关闭。 结果，输出节点的电位变为低电平。

公开(公告)号：US20130126912A1

公开(公告)日：2013-05-23

申请号：US13675399

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: H01L33/00

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Abstract translation: 提供了通过抑制初始发光元件劣化而实现长寿命并且能够进行高占空比驱动的发光器件。 通过形成反向偏置电源线（112）和反向偏压TFT（108），一次对一个EL元件（109）施加反向偏置。 因此，可以与图像信号的写入，发光，擦除等的操作同步地执行反向偏置应用。 因此，在保持与常规驱动方法相同的占空比的情况下，可以实现反向偏置应用。

公开(公告)号：US11121203B2

公开(公告)日：2021-09-14

申请号：US16511032

申请日：2019-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yoshifumi Tanada

IPC: G09G3/36 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3283 ,  G09G3/3291 ,  G09G3/30 ,  G09G3/20 ,  G09G3/3258 ,  G09G3/3275

Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus canceled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).

公开(公告)号：US10991299B2

公开(公告)日：2021-04-27

申请号：US16372502

申请日：2019-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yoshifumi Tanada

IPC: G09G3/3225 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/3283 ,  G09G3/3291 ,  G09G3/3233

Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop. A desired drain current can thus be supplied to the EL device even if there is dispersion in the threshold values of the TFTs among pixels, because this is offset by the threshold value of the TFT.

公开(公告)号：US10762834B2

公开(公告)日：2020-09-01

申请号：US15818806

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yoshifumi Tanada

IPC: G09G3/3225 ,  G09G3/20 ,  G09G3/3266 ,  G09G3/3283 ,  G09G3/3291 ,  G09G3/3233

Abstract: Brightness irregularities that develop in a light emitting device due to is persion among pixels in the threshold values of TFTs used for supplying electric current to light emitting devices become obstacles to improved image quality of the light emitting device. As an image signal input to a pixel from a source signal line, a desired electric potential is applied to a gate electrode of a TFT for supplying electric current to an EL device, through a TFT having its gate and drain connected to each other. A voltage equal to the TFT threshold value is produced between the source and the drain of the TFT 105. An electric potential in which the image signal is offset by the amount of the threshold value is therefore applied to the gate electrode of the TFT. Further, TFTs are disposed in close proximity to each other within the pixel, so that dispersions in the TFT characteristics do not easily develop. A desired drain current can thus be supplied to the EL device even if there is dispersion in the threshold values of the TFTs among pixels, because this is offset by the threshold value of the TFT.

公开(公告)号：US10672329B2

公开(公告)日：2020-06-02

申请号：US16530361

申请日：2019-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitusaki Osame ,  Aya Anzai ,  Yoshifumi Tanada ,  Keisuke Miyagawa ,  Satoshi Seo ,  Shunpei Yamazaki

IPC: G09G3/32 ,  G09G3/3266 ,  G09G3/3291 ,  G09G3/3258 ,  H01L33/00 ,  G09G3/3233

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

公开(公告)号：US20200035708A1

公开(公告)日：2020-01-30

申请号：US16533915

申请日：2019-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC: H01L27/12 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/52 ,  G02F1/1333

Abstract: An object of the present invention is to decrease substantial resistance of art electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive, film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive, material than the resistance of an electrode and a wiring that is required to reduce the resistance.

公开(公告)号：US20200013847A1

公开(公告)日：2020-01-09

申请号：US16511032

申请日：2019-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yoshifumi Tanada

IPC: H01L27/32 ,  G09G3/36 ,  G09G3/30 ,  G09G3/20 ,  G09G3/3291 ,  G09G3/3283 ,  G09G3/3266 ,  G09G3/3233

Abstract: Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus canceled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).