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    Semiconductor device
    64.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07696562B2

    公开(公告)日：2010-04-13

    申请号：US11785962

    申请日：2007-04-23

    申请人： Ikuko Kawamata ,  Yasuyuki Arai

    发明人： Ikuko Kawamata ,  Yasuyuki Arai

    IPC分类号： H01L29/792 ,  H01L21/8238

    CPC分类号： H01L27/11531 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1255 ,  H01L29/04

    摘要： To provide a highly reliable semiconductor device and a method for manufacturing the semiconductor device, where defects such as a short between a gate electrode layer and a semiconductor layer and a leakage current, which would otherwise be caused due to a coverage defect of the semiconductor layer with an insulating layer, can be prevented. In order to form a plurality of semiconductor elements over an insulating surface, a semiconductor layer is not separated into a plurality of island-shape semiconductor layers, but instead, element isolation regions, which electrically insulate a plurality of element regions functioning as semiconductor elements, are formed in one semiconductor layer, i.e., a first element isolation region with high resistance and a second element isolation region which has a contact with the element region and has a conductivity type opposite to that of the source and drain regions of the element region.

    摘要翻译： 为了提供高度可靠的半导体器件和制造半导体器件的方法，其中由于半导体层的覆盖缺陷而导致的栅极电极层和半导体层之间的短路等缺陷以及漏电流 可以防止绝缘层。 为了在绝缘表面上形成多个半导体元件，半导体层不分离成多个岛状半导体层，而是使用作为半导体元件的多个元件区域电绝缘的元件隔离区域， 形成在一个半导体层中，即具有高电阻的第一元件隔离区域和与元件区域接触并具有与元件区域的源极和漏极区域相反的导电类型的第二元件隔离区域。

    Semiconductor device and method for manufacturing the same
    65.
    发明申请
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20070252234A1

    公开(公告)日：2007-11-01

    申请号：US11785962

    申请日：2007-04-23

    申请人： Ikuko Kawamata ,  Yasuyuki Arai

    发明人： Ikuko Kawamata ,  Yasuyuki Arai

    IPC分类号： H01L29/00

    CPC分类号： H01L27/11531 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1255 ,  H01L29/04

    摘要： To provide a highly reliable semiconductor device and a method for manufacturing the semiconductor device, where defects such as a short between a gate electrode layer and a semiconductor layer and a leakage current, which would otherwise be caused due to a coverage defect of the semiconductor layer with an insulating layer, can be prevented. In order to form a plurality of semiconductor elements over an insulating surface, a semiconductor layer is not separated into a plurality of island-shape semiconductor layers, but instead, element isolation regions, which electrically insulate a plurality of element regions functioning as semiconductor elements, are formed in one semiconductor layer, i.e., a first element isolation region with high resistance and a second element isolation region which has a contact with the element region and has a conductivity type opposite to that of the source and drain regions of the element region.

    摘要翻译： 为了提供高度可靠的半导体器件和制造半导体器件的方法，其中由于半导体层的覆盖缺陷而导致的栅极电极层和半导体层之间的短路等缺陷以及漏电流 可以防止绝缘层。 为了在绝缘表面上形成多个半导体元件，半导体层不分离成多个岛状半导体层，而是使用作为半导体元件的多个元件区域电绝缘的元件隔离区域， 形成在一个半导体层中，即具有高电阻的第一元件隔离区域和与元件区域接触并具有与元件区域的源极和漏极区域相反的导电类型的第二元件隔离区域。