摘要:
A headlamp (1) that utilizes a laser beam includes a scattered-light emitting unit (21) that emits scattered light upon receipt of a laser beam deviated from a predetermined path through which the laser beam is to pass or a predetermined irradiation region that is to be irradiated by the laser beam.
摘要:
In order to offer a power supply circuit that can minimize the drop in efficiency by reducing losses during voltage conversion, in an improved-power factor circuit, a control circuit performs a step-up operation in which a control signal for turning on a first switching element (Tr1) and switching a second switching element (Tr2) is output, and a step-down operation in which a control signal for turning off the second switching element (Tr2) and switching the first switching element (Tr1) is output.
摘要:
The semiconductor device of the present invention has a circuit block in which m (m is an integer of not smaller than two) sets of first through m-th transistor columns where two or more transistors are connected in series, one terminal of the first through m-th transistor columns is connected to a first output node, and the other terminal of the first through m-th transistor columns is connected to a second output node. A control signal for substantially simultaneously turning on and off all the transistors of the first through m-th transistor columns is inputted to the control input terminals of the transistors of the first through m-th transistor columns.
摘要:
In the semiconductor storage device, in a read operation, a bit line charging/discharging section 101 performs discharge of bit lines of a memory cell array 100, and a counter counts discharge periods over which the potentials of bit lines come to a specified potential, based on a comparison result of a comparator comparing a potential of a bit line with a reference potential. Based on the comparison result, a reference value generation section 104 generates a reference value (RCi) for determining information stored in each of the memory cells. The above count value (CBUSi) and the above reference value (RCi) are compared with each other by a data decision circuit 108. Based on the comparison result, an output data control circuit 109 outputs information stored in each of the memory cells. This semiconductor storage device suppresses increases in chip area and power consumption and outputs memory cell information accurately.
摘要:
Communication system of a group robot system is made hierarchical, having a base station as an uppermost layer and a plurality of layers formed by a plurality of sensing robots, and the plurality of sensing robots are controlled such that a sensing robot belonging to an upper layer of the hierarchical structure has higher sensing resolution than a sensing robot belonging to a lower layer of the hierarchical structure. Thus, a group robot system capable of efficiently searching for an object can be obtained.
摘要:
Communication system of a group robot system is made hierarchical, having a base station as an uppermost layer and a plurality of layers formed by a plurality of sensing robots, and the plurality of sensing robots are controlled such that a sensing robot belonging to an upper layer of the hierarchical structure has higher sensing resolution than a sensing robot belonging to a lower layer of the hierarchical structure. Thus, a group robot system capable of efficiently searching for an object can be obtained.
摘要:
A flapping apparatus includes a first disk rotated by a driving source, and a second disk that rotates in contact with a main surface of the first disk. The second disk is provided with first and second stoppers that limit its angle of rotation. When the stopper is in contact with the first disk, rotation of a wing shaft is caused only by the rotation of the first disk, and when the stoppers are not in contact with the first disk, rotation of the wing shaft is caused only by the rotation of the second disk.
摘要:
A transmitting apparatus and a receiving apparatus of a position detecting system execute a program including the steps of transmitting a laser beam; detecting an azimuth α(Y) at which the laser beam is transmitted; detecting an azimuth β at which the reflected laser beam is received; calculating a distance L(1) between the transmitting apparatus and a moving body from α(Y), β and a distance D between the transmitting apparatus and the receiving apparatus; and calculating a distance L(2) between the receiving apparatus and the moving body.
摘要:
On a main body portion of a fluttering apparatus, a wing (left wing) is formed which has a front wing shaft, a rear wing shaft and a wing film provided spreading over the front and rear wing shafts. Further, on the main body portion, a rotary actuator for driving the front wing shaft and a rotary actuator for driving the rear wing shaft are mounted. The front (rear) wing shafts reciprocate in a plane orthogonally crossing an axis of rotation with the actuator serving as the fulcrum. Thus, a moving apparatus is obtained which has superior maneuverability and can move not hindered by any obstacle or geometry both indoors and outdoors.
摘要:
There is provided a semiconductor storage device which impairs neither sensing sensitivity nor sensing speed even when a number of memory cells are connected to an extension bit line. A boosting circuit boosts a voltage at an input node by a sensing sensitivity .DELTA.V by a boost signal from a selecting circuit, thereby providing a potential difference .DELTA.V between a voltage at the input node connected to a selected memory cell of a memory cell array and a voltage at an input node on a reference side. A sense amplifier amplifies the potential difference .DELTA.V between the input node and the input node up to a voltage. Thus, a sufficient sensing sensitivity can be obtained without reducing a pre-charge voltage at the input node to a reference voltage. Therefore, a sufficient sensing sensitivity and a rapidly sensing speed can be secured even with a great bit line resistance existence due to the connection of a number of memory cells to the extension bit line.
摘要翻译:提供了即使当多个存储器单元连接到扩展位线时也不会影响感测灵敏度或感测速度的半导体存储装置。 升压电路通过来自选择电路的升压信号使感测灵敏度DELTA V将输入节点处的电压提高,从而在连接到存储单元阵列的选定存储单元的输入节点处的电压之间提供电位差DELTA V 以及参考侧的输入节点处的电压。 读出放大器将输入节点和输入节点之间的电位差DELTA V放大到一个电压。 因此,可以在不将输入节点处的预充电电压降低到参考电压的情况下获得足够的感测灵敏度。 因此,由于存在多个存储单元与扩展位线的连接,即使存在大的位线电阻,也能确保足够的感测灵敏度和快速感测速度。