公开(公告)号：US11600534B2

公开(公告)日：2023-03-07

申请号：US17218459

申请日：2021-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Hsueh-Chang Sung ,  Li-Li Su ,  Yee-Chia Yeo

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

公开(公告)号：US20230068434A1

公开(公告)日：2023-03-02

申请号：US17458950

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-I Kuo ,  Wei Hao Lu ,  Li-Li Su ,  Yee-Chia Yeo

IPC: H01L29/08 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.

公开(公告)号：US20230065620A1

公开(公告)日：2023-03-02

申请号：US17412652

申请日：2021-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Li-Li Su ,  Yee-Chia Yeo

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: An embodiment includes a device including a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first carbon-containing buffer layer on the first fin. The device also includes and a first epitaxial structure on the first carbon-containing buffer layer.

公开(公告)号：US11532750B2

公开(公告)日：2022-12-20

申请号：US16941427

申请日：2020-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Li Su ,  Wei-Min Liu ,  Wei Hao Lu ,  Chien-I Kuo ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.

公开(公告)号：US20220359653A1

公开(公告)日：2022-11-10

申请号：US17644140

申请日：2021-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Li-Li Su ,  Chii-Horng Li ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8234

Abstract: A device includes a first nanostructure over a semiconductor substrate; a second nanostructure over the first nanostructure; a gate structure surrounding the first nanostructure and the second nanostructure; a first epitaxial region in the semiconductor substrate adjacent the gate structure, wherein the first epitaxial region is a first doped semiconductor material; and a second epitaxial region over the first epitaxial region, wherein the second epitaxial region is adjacent the first nanostructure and the second nanostructure, wherein the second epitaxial region is a second doped semiconductor material that is different from the first doped semiconductor material. In an embodiment, the first doped semiconductor material has a smaller doping concentration than the second doped semiconductor material.

公开(公告)号：US20210391324A1

公开(公告)日：2021-12-16

申请号：US16901791

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Hao Lu ,  Yi-Fang Pai ,  Cheng-Wen Cheng ,  Li-Li Su ,  Chien-I Kuo

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/167 ,  H01L21/8234

Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with the lowest point of the epitaxial source/drain region.

公开(公告)号：US20190355816A1

公开(公告)日：2019-11-21

申请号：US16531421

申请日：2019-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-I Kuo ,  Shao-Fu Fu ,  Chia-Ling Chan ,  Yi-Fang Pai ,  Li-Li Su ,  Wei Hao Lu ,  Wei Te Chiang ,  Chii-Horng Li

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/22 ,  H01L21/02 ,  H01L29/36 ,  H01L29/167 ,  H01L29/78 ,  H01L21/223

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

公开(公告)号：US10374038B2

公开(公告)日：2019-08-06

申请号：US15922643

申请日：2018-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-I Kuo ,  Chii-Horng Li ,  Chia-Ling Chan ,  Li-Li Su ,  Yi-Fang Pai ,  Wei Te Chiang ,  Shao-Fu Fu ,  Wei Hao Lu

IPC: H01L21/8234 ,  H01L29/08 ,  H01L29/167 ,  H01L29/36 ,  H01L21/223 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/306

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.