摘要:
Provided is an optical device that includes a ring-shaped optical waveguide and an input/output optical waveguide, and that changes a resonant wavelength of the ring-shaped optical waveguide, in which the ring-shaped optical waveguide includes in part a refractive index control section for controlling a refractive index at a guided wavelength, and the refractive index control section is formed of an optical material having a thermo-optic effect with its sign different from that of an optical material that forms a section of the ring-shaped optical waveguide other than the refractive index control section.
摘要:
A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoelectric converting films is sandwiched between a pixel electrode film and an opposing electrode film, wherein the pixel electrode film of an upper one of the photoelectric converting films is connected to the signal read circuit by a longitudinal line passing through a lower one of the photoelectric converting films, and, in the longitudinal line, a passing portion which passes through the lower photoelectric converting film is formed by filling an opening with a conductive material, the opening being formed from a same plane of the pixel electrode film stacked on the lower photoelectric converting film to an upper end face of the insulating layer stacked above the photoelectric converting film.
摘要:
The present invention provides a colored curable composition including a dye represented by the following formula (I), a color filter prepared by using the colored curable composition, and a method for manufacturing the color filter.
摘要:
A solid-state imaging device comprises pixels including: a light receiving portion comprising intra-substrate photoelectric conversion portions, formed in a silicon substrate, that detect light rays of different color, an on-substrate photoelectric conversion portion, stacked above the intra-substrate photoelectric conversion portions, that detects light rays of a color differing from the colors detected by the intra-substrate photoelectric conversion portions; first and second signal read circuits that read signals corresponding to electric charges in the intra-substrate photoelectric conversion portions and signals corresponding to electric charges in the on-substrate photoelectric conversion portion, respectively. The electric charges in the intra-substrate photoelectric conversion portions are electrons, and the electric charges in the on-substrate photoelectric conversion portions are positive holes. Each of the first and second signal read circuits comprises an output transistor, a reset transistor and a selection transistor which are n-channel MOS transistors. The drain voltage of the reset transistor of the second signal read circuit is set to be lower than that of the reset transistor of the first signal read circuit.
摘要:
In a solid-state image capturing device including a pixel array arranged in a row direction and a column direction orthogonal thereto, and a vertical register having a plurality of transfer electrodes which serves to read signal charges Qa, Qb, . . . generated by light receipt of each of pixels A, B, . . . and to sequentially transfer the signal charge in the column direction upon receipt of a transfer pulse, an electric potential well for a smear charge is generated and an unnecessary charge q in the vertical register is collected into the electric potential well for a smear charge before the signal charge is read from the pixels A, B, . . . onto the vertical register (a timing t707), an electric potential well for signal charge transfer is then generated and the signal charges Qa, Qb, . . . are read from the pixels A, B, . . . onto the electric potential well for signal charge transfer, and the electric potential well for a smear charge and the electric potential well for signal charge transfer are transferred in the direction of a horizontal register without mixing an unnecessary charge 3q with a signal charge Q.
摘要:
A solid-state imaging device comprises pixels including: a light receiving portion comprising intra-substrate photoelectric conversion portions, formed in a silicon substrate, that detect light rays of different color, an on-substrate photoelectric conversion portion, stacked above the intra-substrate photoelectric conversion portions, that detects light rays of a color differing from the colors detected by the intra-substrate photoelectric conversion portions; first and second signal read circuits that read signals corresponding to electric charges in the intra-substrate photoelectric conversion portions and signals corresponding to electric charges in the on-substrate photoelectric conversion portion, respectively. The electric charges in the intra-substrate photoelectric conversion portions are electrons, and the electric charges in the on-substrate photoelectric conversion portions are positive holes. Each of the first and second signal read circuits comprises an output transistor, a reset transistor and a selection transistor which are n-channel MOS transistors. The drain voltage of the reset transistor of the second signal read circuit is set to be lower than that of the reset transistor of the first signal read circuit.
摘要:
To provide an irrigation/aspiration apparatus by which a trouble for an operator is reduced and handling is facilitated and which is capable of preventing a sharp decrease of pressure of an anterior chamber with a simple constitution.The apparatus has a chamber storing an irrigation liquid, a vent tube for making the liquid flow into an aspiration tube, a leading vent leading the liquid into the chamber from an irrigation tubes an outflow pipe extended in an up-and-down direction, an opening formed on a wall of the outflow pipe, of which a width is narrow and set such that an opening is closed by the liquid under surface tension when a liquid level of the liquid inside the chamber rises, an outflow vent to which the irrigation tube or a vent tube is connected, and an air chamber which is a space provided above an inflow hole of the outflow pipe.
摘要:
A solid-state imaging element converts light intensity into an electric charge signal and stores the thus-converted electric charge signal through use of a plurality of photoelectric conversion elements arranged in a square lattice pattern on the surface of a semiconductor substrate in a row direction and a column direction. Vertical transfer sections transfer the electric charges from the first and second photoelectric conversion elements in the column direction. The vertical transfer section comprises a first electric charge reading region for reading electric charge from the first photoelectric conversion element to a vertical transfer channel; and a second electric charge reading region for reading electric charge from the second photoelectric conversion element. The first and second electric charge reading regions are provided at positions corresponding to a vertical transfer electrode, which are activated in difference phases.