Photoelectric converting film stack type solid-state image pickup device, and method of producing the same
    62.
    发明授权
    Photoelectric converting film stack type solid-state image pickup device, and method of producing the same 失效
    光电转换膜堆叠式固态摄像装置及其制造方法

    公开(公告)号:US07858433B2

    公开(公告)日:2010-12-28

    申请号:US12431640

    申请日:2009-04-28

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    IPC分类号: H01L21/00

    摘要: A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoelectric converting films is sandwiched between a pixel electrode film and an opposing electrode film, wherein the pixel electrode film of an upper one of the photoelectric converting films is connected to the signal read circuit by a longitudinal line passing through a lower one of the photoelectric converting films, and, in the longitudinal line, a passing portion which passes through the lower photoelectric converting film is formed by filling an opening with a conductive material, the opening being formed from a same plane of the pixel electrode film stacked on the lower photoelectric converting film to an upper end face of the insulating layer stacked above the photoelectric converting film.

    摘要翻译: 一种固态摄像装置,包括:多个通过绝缘层堆叠的光电转换膜,所述光电转换膜位于形成有信号读取电路的半导体衬底之上,其中每个光电转换膜夹在 像素电极膜和相对电极膜,其中上部光电转换膜的像素电极膜通过穿过下一个光电转换膜的纵向线连接到信号读取电路,并且在 纵向线,通过下部光电转换膜的通过部分通过用导电材料填充开口而形成,该开口由堆叠在下部光电转换膜上的像素电极膜的同一平面形成为上端面 的绝缘层堆叠在光电转换膜上。

    Solid-state imaging device
    66.
    发明授权
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US07498624B2

    公开(公告)日:2009-03-03

    申请号:US11543929

    申请日:2006-10-06

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    IPC分类号: H01L31/113 H01L31/062

    CPC分类号: H01L27/14647

    摘要: A solid-state imaging device comprises pixels including: a light receiving portion comprising intra-substrate photoelectric conversion portions, formed in a silicon substrate, that detect light rays of different color, an on-substrate photoelectric conversion portion, stacked above the intra-substrate photoelectric conversion portions, that detects light rays of a color differing from the colors detected by the intra-substrate photoelectric conversion portions; first and second signal read circuits that read signals corresponding to electric charges in the intra-substrate photoelectric conversion portions and signals corresponding to electric charges in the on-substrate photoelectric conversion portion, respectively. The electric charges in the intra-substrate photoelectric conversion portions are electrons, and the electric charges in the on-substrate photoelectric conversion portions are positive holes. Each of the first and second signal read circuits comprises an output transistor, a reset transistor and a selection transistor which are n-channel MOS transistors. The drain voltage of the reset transistor of the second signal read circuit is set to be lower than that of the reset transistor of the first signal read circuit.

    摘要翻译: 一种固态成像装置,包括:像素,包括:光接收部分,其包含基板内光电转换部分,形成在硅衬底中,检测不同颜色的光线;衬底上光电转换部分,堆叠在衬底之上 光电转换部,其检测与由所述基板内光电转换部检测出的颜色不同的颜色的光线; 第一和第二信号读取电路,其分别读取与基板内光电转换部分中的电荷相对应的信号和对应于基板上光电转换部分中的电荷的信号。 基板内光电转换部中的电荷为电子,基板上的光电转换部的电荷为空穴。 第一和第二信号读取电路中的每一个包括作为n沟道MOS晶体管的输出晶体管,复位晶体管和选择晶体管。 第二信号读取电路的复位晶体管的漏极电压被设定为低于第一信号读取电路的复位晶体管的漏极电压。

    Solid-state image capturing device, smear charge removing method and digital still camera using the same
    67.
    发明授权
    Solid-state image capturing device, smear charge removing method and digital still camera using the same 失效
    固态图像捕获装置,涂片电荷去除方法和使用其的数字静态照相机

    公开(公告)号:US07375750B2

    公开(公告)日:2008-05-20

    申请号:US10329795

    申请日:2002-12-27

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    IPC分类号: H04N9/64

    CPC分类号: H04N5/3595

    摘要: In a solid-state image capturing device including a pixel array arranged in a row direction and a column direction orthogonal thereto, and a vertical register having a plurality of transfer electrodes which serves to read signal charges Qa, Qb, . . . generated by light receipt of each of pixels A, B, . . . and to sequentially transfer the signal charge in the column direction upon receipt of a transfer pulse, an electric potential well for a smear charge is generated and an unnecessary charge q in the vertical register is collected into the electric potential well for a smear charge before the signal charge is read from the pixels A, B, . . . onto the vertical register (a timing t707), an electric potential well for signal charge transfer is then generated and the signal charges Qa, Qb, . . . are read from the pixels A, B, . . . onto the electric potential well for signal charge transfer, and the electric potential well for a smear charge and the electric potential well for signal charge transfer are transferred in the direction of a horizontal register without mixing an unnecessary charge 3q with a signal charge Q.

    摘要翻译: 在包括排列在行方向和与其正交的列方向的像素阵列的固态图像捕获装置中,以及垂直寄存器,具有用于读取信号电荷Qa,Qb的多个转移电极。 。 。 通过像素A,B,...中的每一个的光接收而产生的。 。 。 并且在接收到转移脉冲时顺序地传送列方向上的信号电荷,产生用于拖尾电荷的电势,并且垂直寄存器中的不需要的电荷q被收集到电位阱中用于拖尾电荷 从像素A,B,...读取信号电荷。 。 。 在垂直寄存器(定时t 707),然后产生用于信号电荷转移的电位阱,并且信号对Qa,Qb进行充电。 。 。 从像素A,B,...读取。 。 。 在电位阱上进行信号电荷转移,并且用于污迹电荷的阱电位和用于信号电荷转移的电位阱在水平寄存器的方向上传输,而不用不必要的电荷3 q与信号电荷Q混合。

    Solid-state imaging device
    68.
    发明申请
    Solid-state imaging device 有权
    固态成像装置

    公开(公告)号:US20080083925A1

    公开(公告)日:2008-04-10

    申请号:US11543929

    申请日:2006-10-06

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    IPC分类号: H01L29/04

    CPC分类号: H01L27/14647

    摘要: A solid-state imaging device comprises pixels including: a light receiving portion comprising intra-substrate photoelectric conversion portions, formed in a silicon substrate, that detect light rays of different color, an on-substrate photoelectric conversion portion, stacked above the intra-substrate photoelectric conversion portions, that detects light rays of a color differing from the colors detected by the intra-substrate photoelectric conversion portions; first and second signal read circuits that read signals corresponding to electric charges in the intra-substrate photoelectric conversion portions and signals corresponding to electric charges in the on-substrate photoelectric conversion portion, respectively. The electric charges in the intra-substrate photoelectric conversion portions are electrons, and the electric charges in the on-substrate photoelectric conversion portions are positive holes. Each of the first and second signal read circuits comprises an output transistor, a reset transistor and a selection transistor which are n-channel MOS transistors. The drain voltage of the reset transistor of the second signal read circuit is set to be lower than that of the reset transistor of the first signal read circuit.

    摘要翻译: 一种固态成像装置,包括:像素,包括:光接收部分,其包含基板内光电转换部分,形成在硅衬底中,检测不同颜色的光线;衬底上光电转换部分,堆叠在衬底之上 光电转换部,其检测与由所述基板内光电转换部检测出的颜色不同的颜色的光线; 第一和第二信号读取电路,其分别读取与基板内光电转换部分中的电荷相对应的信号和对应于基板上光电转换部分中的电荷的信号。 基板内光电转换部中的电荷为电子,基板上的光电转换部的电荷为空穴。 第一和第二信号读取电路中的每一个包括作为n沟道MOS晶体管的输出晶体管,复位晶体管和选择晶体管。 第二信号读取电路的复位晶体管的漏极电压被设定为低于第一信号读取电路的复位晶体管的漏极电压。

    Irrigation/aspiration apparatus
    69.
    发明申请
    Irrigation/aspiration apparatus 有权
    灌溉/抽吸装置

    公开(公告)号:US20080033349A1

    公开(公告)日:2008-02-07

    申请号:US11882391

    申请日:2007-08-01

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    IPC分类号: A61M1/00

    CPC分类号: A61M1/0058 A61M1/0084

    摘要: To provide an irrigation/aspiration apparatus by which a trouble for an operator is reduced and handling is facilitated and which is capable of preventing a sharp decrease of pressure of an anterior chamber with a simple constitution.The apparatus has a chamber storing an irrigation liquid, a vent tube for making the liquid flow into an aspiration tube, a leading vent leading the liquid into the chamber from an irrigation tubes an outflow pipe extended in an up-and-down direction, an opening formed on a wall of the outflow pipe, of which a width is narrow and set such that an opening is closed by the liquid under surface tension when a liquid level of the liquid inside the chamber rises, an outflow vent to which the irrigation tube or a vent tube is connected, and an air chamber which is a space provided above an inflow hole of the outflow pipe.

    摘要翻译: 提供一种减轻操作者的麻烦并且容易处理并且能够以简单的结构防止前房的压力急剧下降的灌溉/抽吸装置。 该装置具有储存冲洗液的腔室,用于使液体流入抽吸管的通气管,将冲洗管中的液体从冲洗管引导到腔室中的引导通路,上下方向上延伸的流出管, 开口形成在流出管的壁上,其宽度窄并且设定成使得当腔室内的液体液面升高时在表面张力下开口被液体封闭,流出口 或排气管连接,作为在流出管的流入孔的上方设置的空间的空气室。

    Solid-state imaging element and imaging device with dynamically adjustable sensitivities and method thereof
    70.
    发明授权
    Solid-state imaging element and imaging device with dynamically adjustable sensitivities and method thereof 失效
    具有动态可调灵敏度的固态成像元件和成像装置及其方法

    公开(公告)号:US07223955B2

    公开(公告)日:2007-05-29

    申请号:US10920187

    申请日:2004-08-18

    申请人: Nobuo Suzuki

    发明人: Nobuo Suzuki

    CPC分类号: H04N5/353 H04N5/2351

    摘要: A solid-state imaging element converts light intensity into an electric charge signal and stores the thus-converted electric charge signal through use of a plurality of photoelectric conversion elements arranged in a square lattice pattern on the surface of a semiconductor substrate in a row direction and a column direction. Vertical transfer sections transfer the electric charges from the first and second photoelectric conversion elements in the column direction. The vertical transfer section comprises a first electric charge reading region for reading electric charge from the first photoelectric conversion element to a vertical transfer channel; and a second electric charge reading region for reading electric charge from the second photoelectric conversion element. The first and second electric charge reading regions are provided at positions corresponding to a vertical transfer electrode, which are activated in difference phases.

    摘要翻译: 固态成像元件将光强度转换为电荷信号,并且通过使用以行方向在半导体衬底的表面上以正方形格子图案布置的多个光电转换元件来存储这样转换的电荷信号, 列方向。 垂直传送部分在列方向上传送来自第一和第二光电转换元件的电荷。 垂直传送部分包括用于从第一光电转换元件读取电荷到垂直传送通道的第一电荷读取区域; 以及用于从第二光电转换元件读取电荷的第二电荷读取区域。 第一电荷读取区域和第二电荷读取区域设置在与不同相位被激活的垂直转移电极对应的位置处。