摘要:
A system for multiplexing a plurality of high speed light emitting diodes (HSLEDs) includes a plurality of HSLEDs. Each of the plurality of HSLEDs emits a wavelength of light at a speed greater than or equal to about 1 Gigabyte per second. A multiplexer receives the wavelengths of light from the plurality of HSLEDs and combines the wavelengths of light for transmission over a channel. A method of multiplexing the plurality of HSLEDs is also disclosed.
摘要:
A structure includes a film having a plurality of nanoapertures and a semiconductor layer in connection with the film. The nanoapertures are configured to allow the transmission of a predetermined subwavelength of light through the film via the plurality of nanoapertures. The semiconductor layer facilitates the modulation of the predetermined subwavelength of light transmitted through the film. The structure also includes a carrier generator for modulating the predetermined subwavelength of light by generating charge carriers
摘要:
A technique for reducing speckle in a projected image includes forming an image using a plurality of laser light emitters. An input to the plurality of laser light emitters is non-mechanically perturbed to a degree sufficient to disrupt wavefront uniformity across the array of laser light emitters.
摘要:
An optical device for steering radiation comprises a superprism structure a negative index of refraction for electromagnetic radiation having a frequency of 2ω only, and a photon upconversion structure disposed to upconvert a portion of incident electromagnetic radiation having a frequency of ω to electromagnetic radiation having a frequency of 2ω and to couple a portion of the incident electromagnetic radiation having a frequency ω and the upconverted electromagnetic radiation having a frequency of 2ω into the superprism structure.
摘要:
An electromagnetic resonance device includes an input reflector, an output reflector, and a negative index material (NIM) disposed between the input reflector and the output reflector. The input reflector and output reflector are configured to be reflective to radiation having a wavelength of interest. The NIM is configured to have a negative refraction at the wavelength of interest. A first radiation is reflected by the input reflector toward the first surface of the NIM, passes through the NIM, and is focused on the output reflector as a second radiation. The second radiation is reflected by the output reflector toward the second surface of the NIM, passes through the NIM, and is focused on the input reflector as the first radiation. A gain medium may be included to amplify the first radiation and the second radiation to generate a laser radiation.
摘要:
A nano-enhanced Raman scattering (NERS)-active structure includes a substrate, a monolayer of nanoparticles disposed on a surface of the substrate, and a spacer material surrounding each nanoparticle in the monolayer of nanoparticles. The monolayer of nanoparticles includes a first plurality of nanoparticles and a second plurality of nanoparticles. The nanoparticles of the second plurality are interspersed among the first plurality and exhibit a plasmon frequency that differs from any plasmon frequency exhibited by the first plurality. Also described are a method for forming such a NERS-active structure and a NERS system that includes a NERS-active structure, an excitation radiation source, and a detector for detecting Raman scattered radiation.
摘要:
Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.
摘要:
A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer and the ferromagnets. A sensing method applies a magnetic field to be measured to the semiconductor layer and observes the conductivity of the sensor. The sensing techniques can achieve high magneto-sensitivity and very high operating speed, which in turn provides ultra fast and sensitive magnetic sensors.
摘要:
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5). A spin injection device with a semiconductor layer sandwiched between δ-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.
摘要:
Ultrafast solid state amplifiers of electrical current, including power amplification devices, use injection of spin-polarized electrons from a magnetic region into another magnetic region through a semiconductor control region and electron spin precession inside the control region induced by a magnetic field resulting from a current flowing through a conductive nanowire. The amplifiers may include magnet-semiconductor-magnet heterostructures and are able to operate on electric currents and electromagnetic waves having frequencies up to 100 GHz or more.