公开(公告)号：US08652953B2

公开(公告)日：2014-02-18

申请号：US13560648

申请日：2012-07-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部 通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的高频电源。 通过驱动闸门并覆盖通过门来增强处理的均匀性。

公开(公告)号：US20110217830A1

公开(公告)日：2011-09-08

申请号：US13108625

申请日：2011-05-16

申请人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/26

CPC分类号： H01L21/26513 ,  H01J37/32091 ,  H01J37/32412 ,  H01L21/2236

摘要： There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

摘要翻译： 提供了等离子体掺杂方法和装置，其具有优异的再现性，注入到样品表面的杂质浓度。 在真空容器中，在通过设置在对电极中的气体喷出孔朝向设置在试样电极上的基板喷射气体的状态下，通过作为排气装置的涡轮分子泵从真空容器排出气体， 通过压力调节阀将真空容器保持在预定压力，相对电极的面积将对置电极和样品电极之间的距离设定得足够小，以防止等离子体向外扩散，并且 在对电极和样品电极之间产生电容耦合等离子体，以进行等离子体掺杂。 本文使用的气体是含有低浓度的气体，其含有诸如乙硼烷或膦的杂质。

公开(公告)号：US20110147856A1

公开(公告)日：2011-06-23

申请号：US12937169

申请日：2010-03-04

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno

IPC分类号： H01L29/78 ,  H01L21/223

CPC分类号： H01L29/785 ,  H01L29/66795

摘要： A fin-type semiconductor region (103) is formed on a substrate (101), and then a resist pattern (105) is formed on the substrate (101). An impurity is implanted into the fin-type semiconductor region (103) by a plasma doping process using the resist pattern (105) as a mask, and then at least a side of the fin-type semiconductor region (103) is covered with a protective film (107). Thereafter, the resist pattern (105) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region (103) is activated by heat treatment.

摘要翻译： 在基板（101）上形成翅片型半导体区域（103），然后在基板（101）上形成抗蚀图案（105）。 通过使用抗蚀剂图案（105）作为掩模的等离子体掺杂工艺将杂质注入到鳍式半导体区域（103）中，然后用鳍状半导体区域（103）的至少一侧覆盖 保护膜（107）。 此后，通过使用化学溶液的清洗除去抗蚀剂图案（105），然后通过热处理激活注入到鳍式半导体区域（103）中的杂质。

公开(公告)号：US07759254B2

公开(公告)日：2010-07-20

申请号：US10569464

申请日：2004-08-25

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  H01L21/2236

摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.

摘要翻译： 公开了一种形成杂质导入层的方法。 该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。 去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。 清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。 除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行 固体基质。

公开(公告)号：US20100098837A1

公开(公告)日：2010-04-22

申请号：US12648142

申请日：2009-12-28

申请人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： C23C16/52 ,  H05H1/24 ,  C23C16/448

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US20090186426A1

公开(公告)日：2009-07-23

申请号：US11887456

申请日：2006-03-28

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/66 ,  B05C11/00

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided.In the plasma doping method by which plasma is generated within a vacuum chamber, and impurity ions contained in the plasma are caused to collide with the surface of the sample so as to quality-change the surface of the sample into an amorphous state thereof, a plasma irradiation time is adjusted in order to improve an in-plane uniformity. If the plasma irradiation time becomes excessively short, then a fluctuation of the plasma is transferred to depths of an amorphous layer formed on a silicon substrate, so that the in-plane uniformity is deteriorated. On the other hand, if the irradiation time becomes excessively long, then an effect for sputtering the surface of the silicon substrate by using the plasma becomes dominant, then the in-plane uniformity is deteriorated. While a proper plasma irradiation time present in an intermediate time between the long plasma irradiation time and the short plasma irradiation time is found out, during which the in-plane uniformity becomes better, a plasma doping process is carried out within the intermediate time.

摘要翻译： 提供了在样品表面上形成的非晶层具有优异的面内均匀性的等离子体掺杂方法和等离子体掺杂装置。 在真空室内产生等离子体的等离子体掺杂方法中，使包含在等离子体中的杂质离子与样品的表面碰撞，从而使样品的表面质量变为非晶态， 调整等离子体照射时间以提高面内均匀性。 如果等离子体照射时间变得过短，则将等离子体的波动转移到在硅衬底上形成的非晶层的深度，使得面内均匀性变差。 另一方面，如果照射时间变得过长，则通过使用等离子体对硅衬底的表面进行溅射的效果变得主导，则面内均匀性劣化。 而在长等离子体照射时间和短等离子体照射时间之间存在中等时间的合适的等离子体照射时间的同时，在平面内均匀性变好的情况下，在中间时间内进行等离子体掺杂工序。

公开(公告)号：US20090068769A1

公开(公告)日：2009-03-12

申请号：US11887821

申请日：2006-04-04

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/66 ,  G21K5/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

摘要： An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample.Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor 14 and an arithmetic device 15.

摘要翻译： 本发明的目的是提供一种等离子体处理的方法和装置，其可以精确地监测施加在样品表面上的离子电流。 通过涡轮分子泵3通过排气口11排出预定气体，同时从气体供给装置2将真空室1内的气体导入，并通过压力调节将真空室1内的压力保持在规定值 用于等离子体源的高频电源5向设置在电介质窗口7附近的线圈8提供高频电力，以在真空室1内产生电感耦合等离子体。一高频电源10用于 提供了用于向样品电极6提供高频电力的样品电极。 在样品电极高频电源和样品电极6之间设置用于采样电极和高频传感器14的匹配电路13。可以使用高电平来准确地监测施加到样品表面的离子电流 频率传感器14和运算装置15。

公开(公告)号：US20080318399A1

公开(公告)日：2008-12-25

申请号：US12139968

申请日：2008-06-16

申请人： Yuichiro SASAKI ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro SASAKI ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

摘要翻译： 实现了可以精确控制剂量的等离子体掺杂方法。 剂量的面内均匀性得到改善。 已经发现，如果通过将B2H6 / He等离子体照射到硅衬底上施加偏压，则存在使硼剂量基本均匀的时间，并且饱和时间比较长并且易于稳定使用， 与可以确保装置控制的可重复性的时间相比。 本发明已经确定了结果。 也就是说，如果等离子体照射开始，则剂量最初增加，但是持续施加剂量基本上均匀而不依赖于时间变化的时间。 此外，如果时间进一步增加，则剂量降低。 剂量可以通过在剂量基本均匀的时间的过程窗口中被准确地控制，而不依赖于时间变化。

公开(公告)号：US07407874B2

公开(公告)日：2008-08-05

申请号：US11647149

申请日：2006-12-29

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L29/66795

摘要： A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved.It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

公开(公告)号：US20080146009A1

公开(公告)日：2008-06-19

申请号：US10597716

申请日：2005-02-04

申请人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

发明人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

IPC分类号： H01L21/22

CPC分类号： H01L21/2236

摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

摘要翻译： 为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。 在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应 对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。