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    Ceiling fan light
    71.
    外观设计
    Ceiling fan light 有权

    公开(公告)号：USD1029328S1

    公开(公告)日：2024-05-28

    申请号：US29925764

    申请日：2024-01-26

    Applicant: Bin Lu

    Designer： Bin Lu

    Abstract: FIG. 1 is a top perspective view of a ceiling fan light, showing my new design;
    FIG. 2 is a bottom perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.
    The broken lines in the drawings illustrate the portions of the ceiling fan light, which form no part of the claimed design.

    NON-PLATINUM-BASED ANTI-CANCER COMPOUNDS FOR USE IN TARGETED CHEMOTHERAPY
    72.
    发明申请
    NON-PLATINUM-BASED ANTI-CANCER COMPOUNDS FOR USE IN TARGETED CHEMOTHERAPY 审中-公开

    公开(公告)号：US20200009133A1

    公开(公告)日：2020-01-09

    申请号：US16574800

    申请日：2019-09-18

    Applicant: Qing-Bin Lu

    Inventor： Qing-Bin Lu

    IPC: A61K31/4965 ,  A61K31/136 ,  A61K31/44

    Abstract: Disclosed herein are non-platinum-based (NPB) anti-cancer compounds useful for targeted chemotherapy, e.g., to generate anti-cancer effects for the treatment of cancer and other disorders while having no or minimal toxicity. The compounds have the general formula I: (I) wherein A represents an aromatic core; at least one of Ra and Rb is an electron transfer promoter as defined herein, e.g., NH2; and at least one of Rc is a leaving group as defined herein, e.g., halogen; and the remainder of the molecule is as defined herein. Pharmaceutical compositions, methods, uses, kits and commercial packages comprising the anti-cancer compounds are also disclosed.

    System and method of detecting cavitation in pumps
    76.
    发明授权
    System and method of detecting cavitation in pumps 有权

    公开(公告)号：US09777748B2

    公开(公告)日：2017-10-03

    申请号：US12753930

    申请日：2010-04-05

    Applicant: Bin Lu ,  Santosh Kumar Sharma ,  Ting Yan ,  Steven A. Dimino

    Inventor： Bin Lu ,  Santosh Kumar Sharma ,  Ting Yan ,  Steven A. Dimino

    IPC: G08B21/00 ,  F04D29/66 ,  F04D15/00

    CPC classification number: F04D29/669 ,  F04D15/0077 ,  F04D15/0088

    Abstract: A system and method for detecting cavitation in pumps for fixed and variable supply frequency applications is disclosed. The system includes a controller having a processor programmed to repeatedly receive real-time operating current data from a motor driving a pump, generate a current frequency spectrum from the current data, and analyze current data within a pair of signature frequency bands of the current frequency spectrum. The processor is further programmed to repeatedly determine fault signatures as a function of the current data within the pair of signature frequency bands, repeatedly determine fault indices based on the fault signatures and a dynamic reference signature, compare the fault indices to a reference index, and identify a cavitation condition in a pump based on a comparison between the reference index and a current fault index.

    SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE
    80.
    发明申请
    SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE 有权
    半导体结构和记忆形成蚀刻技术

    公开(公告)号：US20160064539A1

    公开(公告)日：2016-03-03

    申请号：US14442546

    申请日：2013-11-15

    Applicant: Bin Lu ,  Min Sun ,  Tomas Palacios

    Inventor： Bin Lu ,  Min Sun ,  Tomas Palacios

    IPC: H01L29/778 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L29/423

    CPC classification number: H01L29/7787 ,  H01L21/30612 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

    Abstract: A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

    Abstract translation: 半导体结构具有包括第一半导体材料的第一层和包括第二半导体材料的第二层。 第一半导体材料可以使用第一蚀刻工艺在第二半导体材料上选择性地蚀刻。 第一层设置在第二层上。 凹部至少设置在第一层中。 还描述了形成包括凹部的半导体结构的方法。 该方法包括使用第一蚀刻工艺蚀刻第一层中的区域。 第一层包括第一半导体材料。 第一蚀刻工艺在第一层下面的第二层停止。 第二层包括第二半导体材料。

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