公开(公告)号：US07582890B2

公开(公告)日：2009-09-01

申请号：US11103078

申请日：2005-04-11

Applicant: Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

Inventor： Young-Ki Ha ,  Jang-Eun Lee ,  Se-Chung Oh ,  Jun-Soo Bae ,  Hyun-Jo Kim ,  Kyung-Tae Nam

IPC: H01L27/20

CPC classification number: G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

Abstract: Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.

Abstract translation: 提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。 磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。 至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

公开(公告)号：US07541199B2

公开(公告)日：2009-06-02

申请号：US11350545

申请日：2006-02-09

Applicant: Jun-Soo Bae ,  Jong-Bong Park

Inventor： Jun-Soo Bae ,  Jong-Bong Park

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L43/12 ,  B82Y10/00 ,  H01L27/228

Abstract: Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic layer and a tunnel barrier layer may be relatively high. Using the tunnel barrier layer as an etch-stop layer, the oxidized portion of the top magnetic layer is selectively removed to form a top magnetic pattern, and to expose at least a portion of opposite sidewalls of the top magnetic pattern and the tunnel barrier layer. The unoxidized portion of the top magnetic layer forms a top magnetic pattern.

Abstract translation: 形成磁存储器件的方法包括使用导电封盖图案作为掩模来氧化顶部磁性层。 顶部磁性层的氧化部分和隧道势垒层之间的蚀刻选择性可能相对较高。 使用隧道势垒层作为蚀刻停止层，选择性地去除顶部磁性层的氧化部分以形成顶部磁性图案，并且暴露顶部磁性图案和隧道势垒层的相对侧壁的至少一部分 。 顶部磁性层的未氧化部分形成顶部磁性图案。

公开(公告)号：US20090052235A1

公开(公告)日：2009-02-26

申请号：US12228914

申请日：2008-08-18

Applicant: Hideki Horii ,  Jun-Soo Bae

Inventor： Hideki Horii ,  Jun-Soo Bae

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2013/0078 ,  G11C2013/0092

Abstract: Provided is a method of programming a resistance variable memory device. The resistance variable memory device includes a memory cell having multi states and a write driver outputting a program pulse for programming the memory cell into one of the multi states. The method of programming the resistance variable memory device includes applying a first program pulse to the resistance variable memory device and applying a second program pulse to a memory cell when the memory cell is programmed into an intermediate state. When the first program pulse is a reset pulse, the reset pulse is an over program pulse, that is, an over reset pulse. Therefore, the resistance variable memory device can secure a sufficient read margin as well as improve a resistance drift margin.

Abstract translation: 提供了一种编程电阻变量存储器件的方法。 电阻可变存储器件包括具有多态的存储器单元和写入驱动器，其输出用于将存储器单元编程为多态的其中一个状态的编程脉冲。 编程电阻可变存储器件的方法包括：当存储器单元被编程到中间状态时，将第一编程脉冲施加到电阻可变存储器件并向存储器单元施加第二编程脉冲。 当第一个编程脉冲是复位脉冲时，复位脉冲是过程编程脉冲，即过复位脉冲。 因此，电阻可变存储器件可以确保足够的读取余量以及改善电阻漂移裕度。

公开(公告)号：US20070224796A1

公开(公告)日：2007-09-27

申请号：US11625142

申请日：2007-01-19

Applicant: Young-Soo LIM ,  Jun-Soo BAE

Inventor： Young-Soo LIM ,  Jun-Soo BAE

IPC: H01L21/44

CPC classification number: H01L45/1233 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1675

Abstract: The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.

Abstract translation: 本发明涉及形成可变相结构的方法，其中上电极形成在相变层上。 可以向相变层和上电极提供包含氟的材料。 相变层可被蚀刻以形成相变图案。 然后可以将氧等离子体或水蒸气等离子体提供给上电极和相变图案。

公开(公告)号：US20070190683A1

公开(公告)日：2007-08-16

申请号：US11674580

申请日：2007-02-13

Applicant: Jun-Soo BAE ,  Hideki HORII ,  Ji-Hye YI ,  Young-Soo LIM

Inventor： Jun-Soo BAE ,  Hideki HORII ,  Ji-Hye YI ,  Young-Soo LIM

IPC: H01L21/00

CPC classification number: H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

Abstract: The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.

Abstract translation: 本发明涉及具有减少的缺陷量的相变结构和形成相变结构的方法。 首先通过（i）在下电极上形成包括硫族化物的相变层来形成堆叠复合体，（ii）形成相对于在相上包括氯的第一蚀刻材料具有第一蚀刻速率的蚀刻停止层 可变层，和（iii）形成相对于蚀刻停止层上的第一蚀刻材料具有第二蚀刻速率的导电层。 然后使用第一蚀刻材料蚀刻层叠复合体的导电层以形成上电极。 然后使用基本上不含氯的第二蚀刻材料来蚀刻蚀刻停止层和相变层，以分别形成蚀刻停止图案和相变图案。

公开(公告)号：US20060246604A1

公开(公告)日：2006-11-02

申请号：US11350545

申请日：2006-02-09

Applicant: Jun-Soo Bae ,  Jong-Bong Park

Inventor： Jun-Soo Bae ,  Jong-Bong Park

IPC: H01L21/00

CPC classification number: H01L43/12 ,  B82Y10/00 ,  H01L27/228

Abstract: Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic layer and a tunnel barrier layer may be relatively high. Using the tunnel barrier layer as an etch-stop layer, the oxidized portion of the top magnetic layer is selectively removed to form a top magnetic pattern, and to expose at least a portion of opposite sidewalls of the top magnetic pattern and the tunnel barrier layer. The unoxidized portion of the top magnetic layer forms a top magnetic pattern.

Abstract translation: 形成磁存储器件的方法包括使用导电封盖图案作为掩模来氧化顶部磁性层。 顶部磁性层的氧化部分和隧道势垒层之间的蚀刻选择性可能相对较高。 使用隧道势垒层作为蚀刻停止层，选择性地去除顶部磁性层的氧化部分以形成顶部磁性图案，并且暴露顶部磁性图案和隧道势垒层的相对侧壁的至少一部分 。 顶部磁性层的未氧化部分形成顶部磁性图案。