公开(公告)号：US6082756A

公开(公告)日：2000-07-04

申请号：US175991

申请日：1998-10-21

Applicant: David Wu

Inventor： David Wu

IPC: B62B1/04 ,  A63B55/08 ,  B63B1/00

CPC classification number: B62B1/045 ,  B62B2202/404 ,  Y10S280/06

Abstract: A supporting frame structure including two supporting frames bilaterally connected between a bracket on a main rod member of a golf cart and two wheel holder frames, which each hold a wheel, each supporting frame formed of a first frame bar and a second frame bar pivotably connected in parallel between the bracket and one wheel holder frame, wherein the first frame of each supporting frame has a beveled peripheral side wall, the second frame bar of each supporting frame has a beveled peripheral side wall facing the beveled peripheral side wall of the corresponding first frame bar and spaced from the beveled peripheral side wall of the corresponding first frame bar by a gap; the beveled peripheral side walls of the first frame bars of the supporting frames are forced downwards into close contact with the beveled peripheral side walls of the respective second frame bars to support the golf cart on the wheels stably.

Abstract translation: 一种支撑框架结构，包括两个支撑框架，两个支撑框架双向连接在高尔夫球车的主杆构件上的支架和两个车轮框架之间，每个支架框架保持一个车轮，每个支撑框架由第一框架杆和第二框架杆可枢转地连接 平行于托架与一个轮架框架之间，其中每个支撑框架的第一框架具有斜边的周边侧壁，每个支撑框架的第二框架杆具有面对相应的第一边缘的倾斜的周边侧壁的倾斜的周边侧壁 与相应的第一框架条的倾斜的周边侧壁隔开间隙; 支撑框架的第一框架杆的倾斜的周边侧壁被迫下降以与相应的第二框架杆的倾斜的周边侧壁紧密接触，以稳定地支撑车轮上的高尔夫球车。

公开(公告)号：US6017052A

公开(公告)日：2000-01-25

申请号：US63363

申请日：1998-04-21

Applicant: David Wu

Inventor： David Wu

IPC: B62B1/04 ,  G02B25/00

CPC classification number: B62B1/047 ,  B62B2202/404 ,  Y10S280/06

Abstract: A folding collapsible frame assembly for a golf cart in which a locating block is pivotably mounted in an opening between two parallel walls of upper bag cradle being fixedly fastened to the front end of a main shaft, a spring is mounted in the opening in the upper bag cradle to support the locating block, a handle bracket is pivoted to the upper bag cradle to hold a handle bar and turned about an axis between a first position where the handle bracket is received in a receiving chamber in the upper bag cradle to hold the handle bar in longitudinal alignment with the main shaft and a locating flange of the handle bracket is forced into engagement with a locating groove on the locating block, and a second position where the locating flange of the handle bracket is disengaged from the locating groove of the locating block and the handle bracket is moved out of the receiving chamber and retained in parallel to the main shaft.

Abstract translation: 一种用于高尔夫球车的折叠式可折叠框架组件，其中定位块可枢转地安装在上部支架支架的两个平行壁之间的开口中，其固定地紧固到主轴的前端，弹簧安装在上部的开口中 支架支撑定位块，手柄支架枢转到上袋支架以保持手柄并在第一位置和第二位置之间转动，手柄支架被容纳在上袋支架的容纳室中以保持 与主轴纵向对准的把手杆，并且手柄支架的定位凸缘被迫与定位块上的定位槽接合，并且第二位置，手柄支架的定位凸缘与定位槽的定位槽脱离 定位块和把手支架移出接收室并保持平行于主轴。

公开(公告)号：US5819355A

公开(公告)日：1998-10-13

申请号：US44079

申请日：1998-03-19

Applicant: David Wu

Inventor： David Wu

IPC: A46B15/00 ,  A63B57/00 ,  A47L13/12

CPC classification number: A46B15/0055 ,  A63B57/60 ,  Y10S15/06

Abstract: A club head brush having a first bristle holder and a second bristle holder at one end of the body thereof, the first bristle holder and the second bristle holder holding bundles of bristles of different softness for cleaning golf club heads, and a pick coupled to a sliding switch at an opposite end of the body and used for removing dirt from scoring lines and grooves on golf club heads, the pick being moved in and out of a through hole at the rear end of the club head brush when the sliding switch is moved along a longitudinal sliding slot on the body.

Abstract translation: 一种球杆头刷，其具有在其本体的一端处的第一刷毛支架和第二刷毛支架，第一刷毛支架和第二刷毛支架保持不同柔软度的刷毛束，用于清洁高尔夫球杆头部，以及拾取器，其连接到 滑动开关位于本体的相对端，用于从高尔夫球杆头上的刻痕线和凹槽中除去灰尘，当滑动开关移动时，该拾取头在球杆头刷的后端移入和移出球杆头刷后端的通孔 沿着身体上的纵向滑动槽。

公开(公告)号：US09407890B2

公开(公告)日：2016-08-02

申请号：US12353826

申请日：2009-01-14

Applicant: Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

Inventor： Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

IPC: H04N9/77 ,  H04N9/64

CPC classification number: H04N9/77 ,  H04N9/646

Abstract: A video processing system may be operable to utilize multi-band sharpening to process luma signals for image signals. The luma signal may be decomposed into a plurality of frequency band components, wherein each component may be processed separately using different sharpening gains and/or offsets. The multi-band processed components may be combined to generate sharpened output luma signals. The multi-band sharpening may be performed utilizing peaking processing, and the input luma signal and/or LTI sharpened luma signals may be combined with the multi-band peaking sharpened signals to generate the sharpened output luma signals. Corresponding chroma signals may also be adjusted to generate sharpened output chroma signals. Luma and/or chroma sharpening operations may be further adjusted based on coring, clipping avoidance, luma statistics, color region detections, and/or curve control parameters. Sharpened output image signals may be generated based on the sharpened output luma signals and the sharpened output chroma signals.

Abstract translation: 视频处理系统可以用于利用多频带锐化来处理图像信号的亮度信号。 亮度信号可以被分解成多个频带分量，其中每个分量可以使用不同的锐化增益和/或偏移分别进行处理。 可以组合多波段处理的分量以产生锐化的输出亮度信号。 可以使用峰化处理来执行多频带锐化，并且可以将输入亮度信号和/或LTI锐化亮度信号与多频带峰值锐化信号组合以产生锐化的输出亮度信号。 也可以调整相应的色度信号以产生锐化的输出色度信号。 可以基于取芯，限制避免，亮度统计，颜色区域检测和/或曲线控制参数来进一步调节亮度和/或色度磨削操作。 可以基于锐化的输出亮度信号和锐化的输出色度信号来产生锐化的输出图像信号。

公开(公告)号：US20120007182A1

公开(公告)日：2012-01-12

申请号：US13239865

申请日：2011-09-22

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L27/12

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US08048753B2

公开(公告)日：2011-11-01

申请号：US12483737

申请日：2009-06-12

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L21/331 ,  H01L21/8222

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US20100314685A1

公开(公告)日：2010-12-16

申请号：US12483737

申请日：2009-06-12

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L27/06 ,  H01L21/77

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US07761838B2

公开(公告)日：2010-07-20

申请号：US11861492

申请日：2007-09-26

Applicant: Zhonghai Shi ,  Mark Michael ,  Donna Michael, legal representative ,  David Wu ,  James F. Buller ,  Jingrong Zhou ,  Akif Sultan

Inventor： Zhonghai Shi ,  Mark Michael ,  David Wu ,  James F. Buller ,  Jingrong Zhou ,  Akif Sultan

IPC: G06F17/50 ,  H01L21/8238

CPC classification number: H01L21/823807 ,  H01L29/78 ,  H01L29/7843

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.

Abstract translation: 本文所述的技术和技术涉及自动创建与半导体基晶体管器件一起使用的应力衬垫的光致抗蚀剂掩模。 应力衬垫掩模是利用自动设计工具生成的，其利用与晶片上的特征，器件和结构对应的布局数据。 产生的应力衬垫掩模（以及使用应力衬垫掩模制造的晶片）限定了延伸超出晶体管区域的边界并进入晶片的应力不敏感区域的应力衬垫覆盖区域。 延伸的应力衬垫通过提供额外的压缩/拉伸应力来进一步提高相应晶体管的性能。

公开(公告)号：US07638837B2

公开(公告)日：2009-12-29

申请号：US11861051

申请日：2007-09-25

Applicant: Akif Sultan ,  Mark Michael ,  Donna Michael, legal representative ,  David Wu

Inventor： Akif Sultan ,  Mark Michael ,  David Wu

IPC: H01L27/092

CPC classification number: H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7843

Abstract: A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.

Abstract translation: 提供一种应力增强型半导体器件，其包括具有非活性区域和有源区域的衬底，覆盖有源区域的至少一部分的第一类型应力层和第二类型应力层。 有源区域包括限定有源区域的第一宽度的第一侧边缘和限定有源区域的第二宽度的第二侧边缘。 第二类应力层设置在活动区域​​的第二侧边缘附近。

公开(公告)号：US07576357B1

公开(公告)日：2009-08-18

申请号：US11259572

申请日：2005-10-26

Applicant: Jianhong Zhu ,  David Wu

Inventor： Jianhong Zhu ,  David Wu

IPC: H01L23/58

CPC classification number: H01L22/14 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of detecting damage to at least one dielectric layer in an IC die by determining a capacitance factor. The capacitance factor can be used to determine damage in a low-k dielectric material. A system for detecting damage can include a conductive line structure for measuring capacitance and software or a device for determining the capacitance to determine the damage.

Abstract translation: 一种通过确定电容因子来检测IC芯片中的至少一个电介质层的损伤的方法。 电容因数可用于确定低k电介质材料的损伤。 用于检测损伤的系统可以包括用于测量电容和软件的导线结构或用于确定电容以确定损坏的装置。