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公开(公告)号：US08283202B2
公开(公告)日：2012-10-09
申请号：US12549997
申请日：2009-08-28
IPC分类号： H01L45/00
CPC分类号： H01L45/148 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/1683
摘要： A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material.
摘要翻译： 在半导体结构内制造相变存储元件的方法包括蚀刻到底部电极的上表面的开口，该开口由等于半导体结构内同一层的金属区域的高度的高度形成， 在开口内沉积相变材料，使开关内的相变材料凹陷，并在凹陷相变材料上形成顶部电极。
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公开(公告)号：US07982285B2
公开(公告)日：2011-07-19
申请号：US11970750
申请日：2008-01-08
IPC分类号： H01L23/52
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
摘要翻译： 本发明提供了具有集成加热元件的反熔丝结构及其编程方法，反熔丝结构包括第一和第二导体以及形成在导体之间的电介质层，其中一个或两个导体用作传统的反熔丝导体和 作为用于在编程期间直接加热反熔丝介电层的加热元件。
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公开(公告)号：US07960808B2
公开(公告)日：2011-06-14
申请号：US11844109
申请日：2007-08-23
申请人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
发明人： Geoffrey W. Burr , Chandrasekharan Kothandaraman , Chung Hon Lam , Xiao Hu Liu , Stephen M. Rossnagel , Christy S. Tyberg , Robert L. Wisnieff
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/5252 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.
摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。
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74.发明授权Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable 失效使用电可编程保险丝隐藏架构，防止逆向工程，并使设备无法工作公开(公告)号：US07550789B2
公开(公告)日：2009-06-23
申请号：US12039829
申请日：2008-02-29
申请人： Anthony R. Bonaccio , Karl R. Erickson , John A. Fifield , Chandrasekharan Kothandaraman , Phil C. Paone , William R. Tonti
发明人： Anthony R. Bonaccio , Karl R. Erickson , John A. Fifield , Chandrasekharan Kothandaraman , Phil C. Paone , William R. Tonti
IPC分类号： H01L29/80
CPC分类号： G06F12/1433 , G06F21/6245
摘要： Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided. The operation and/or access may be provided based on values stored in non-volatile storage elements, such as electrically programmable fused (eFUSES).
摘要翻译： 提供了在设备已经离开制造商的控制之后可以控制电子设备的特定特征的操作和/或访问的技术和系统。 可以基于存储在诸如电可编程融合（eFUSES）的非易失性存储元件中的值来提供操作和/或访问。
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公开(公告)号：US20080232152A1
公开(公告)日：2008-09-25
申请号：US11872802
申请日：2007-10-16
IPC分类号： G11C17/00
摘要： A method and structure for implementing a reprogrammable read only memory (ROM), and a design structure on which the subject circuit resides are provided. A pair of fuse elements having different lengths are selectively arranged to define an initial bit state. A group of a plurality of the pairs of fuse elements defines a predetermined data pattern of ones and zeros, providing initial states stored in the reprogrammable ROM. The reprogrammable ROM is reprogrammed when needed by selectively blowing a selected fuse or selected fuses to change the data pattern stored in the ROM.
摘要翻译： 一种用于实现可再编程只读存储器（ROM）的方法和结构，以及设置有该对象电路所在的设计结构。 选择性地布置具有不同长度的一对熔丝元件以限定初始位状态。 一组多对熔丝元件定义了一个和零的预定数据模式，提供存储在可再编程ROM中的初始状态。 当需要时，通过选择性地吹送所选择的保险丝或选定的保险丝来改变存储在ROM中的数据模式，重编程ROM被重新编程。
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公开(公告)号：US07391097B2
公开(公告)日：2008-06-24
申请号：US11160151
申请日：2005-06-10
IPC分类号： H01L29/06
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides electrically-programmable fuse structures having radiation inhibitive properties for preventing non-destructive security breaches by radiation imaging techniques such as X-ray imaging, without adversely effecting fuse programmability, and methods of designing the same.
摘要翻译： 本发明提供了具有辐射抑制特性的电可编程熔丝结构，用于通过诸如X射线成像的放射线成像技术来防止非破坏性的安全漏洞，而不会对保险丝可编程性产生不利影响，以及设计熔丝可编程性的方法。
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77.发明授权Method of making electrically programmable fuse for silicon-on-insulator (SOI) technology 有权制造用于绝缘体上硅（SOI）技术的电可编程熔丝的方法公开(公告)号：US07354805B2
公开(公告)日：2008-04-08
申请号：US11739979
申请日：2007-04-25
IPC分类号： H01L21/82
CPC分类号： H01L23/5256 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.
摘要翻译： 描述了一种熔丝结构及其形成方法，其中熔丝的主体由绝缘体上的结晶半导体本体形成，绝缘体优选由绝缘体上硅晶片，被填充电介质环绕。 填充电介质优选是使结晶体（例如氧化物）上的应力最小化的材料。 主体可以被掺杂，并且还可以在上表面上包括硅化物层。 这种熔丝结构可以在广泛的编程电压和时间范围内成功编程。
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公开(公告)号：US20080073749A1
公开(公告)日：2008-03-27
申请号：US11949569
申请日：2007-12-03
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , G11C17/165 , G11C2229/763 , H01L27/11206 , H01L2924/0002 , H01L2924/3011 , Y10S257/928 , H01L2924/00
摘要： The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.
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79.发明申请Methods and Apparatus for Characterizing Electronic Fuses Used to Personalize an Integrated Circuit 失效用于表征用于个性化集成电路的电子保险丝的方法和装置公开(公告)号：US20080048761A1
公开(公告)日：2008-02-28
申请号：US11923916
申请日：2007-10-25
IPC分类号： H01H37/76
CPC分类号： G01R31/31853 , G01R31/30 , G01R31/3004
摘要： An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also provides at least one pulse generation circuit associated with the fuse and capable of generating a pulse to blow the fuse through one or more DC input signals.
摘要翻译： 提供一种具有至少一个能够被熔断以便提供熔丝电流 - 电压特性测量的熔断器的集成电路器件。 集成电路装置还提供与熔丝相关联的至少一个脉冲发生电路，并且能够产生脉冲以通过一个或多个DC输入信号来熔断熔丝。
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80.发明申请ELECTRICAL FUSES COMPRISING THIN FILM TRANSISTORS (TFTS), AND METHODS FOR PROGRAMMING SAME 有权包含薄膜晶体管（TFTS）的电熔丝及其编程方法公开(公告)号：US20070158781A1
公开(公告)日：2007-07-12
申请号：US11306597
申请日：2006-01-04
IPC分类号： H01L29/00
CPC分类号： H01L29/42384 , H01L23/345 , H01L23/5256 , H01L29/78669 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to electrical fuses that each comprises at least one thin film transistor. In one embodiment, the electrical fuse of the present invention comprises a hydrogenated thin film transistor with an adjacent heating element. Programming of such an electrical fuse can be effectuated by heating the hydrogenated thin film transistor so as to cause at least partial dehydrogenation. Consequentially, the thin film transistor exhibits detectible physical property change(s), which defines a programmed state. In an alternative embodiment of the present invention, the electrical fuse comprises a thin film transistor that is either hydrogenated or not hydrogenated. Programming of such an alternative electrical fuse can be effectuated by applying a sufficient high back gate voltage to the thin film transistor to cause state changes in the channel-gate interface. In this manner, the thin film transistor also exhibits detectible property change(s) to define a programmed state.
摘要翻译： 本发明涉及电熔丝，每个电熔丝包括至少一个薄膜晶体管。 在一个实施例中，本发明的电熔丝包括具有相邻加热元件的氢化薄膜晶体管。 可以通过加热氢化薄膜晶体管来实现这种电熔丝的编程，从而至少部分脱氢。 因此，薄膜晶体管表现出可检测的物理特性变化，其定义了编程状态。 在本发明的替代实施例中，电熔丝包括被氢化或未氢化的薄膜晶体管。 可以通过向薄膜晶体管施加足够的高背栅电压来引起通道栅极界面的状态变化来实现这种替代电熔丝的编程。 以这种方式，薄膜晶体管还具有可检测的特性变化以限定编程状态。
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