公开(公告)号：US20090255995A1

公开(公告)日：2009-10-15

申请号：US11921557

申请日：2006-06-21

申请人： Yutaka Shionoiri ,  Tomoaki Atsumi

发明人： Yutaka Shionoiri ,  Tomoaki Atsumi

IPC分类号： G06K19/06

CPC分类号： H01L27/1266 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L27/1214 ,  H01L27/13

摘要： Among transistors used in an analog circuit portion of the semiconductor device, particularly in a high frequency circuit, a power supply circuit, and a data demodulation circuit, and transistors used in a digital circuit portion (logic circuit portion), a gate length of a transistor in the analog circuit portion is not less than a gate length of a transistor in the digital circuit portion. As a result, when an excess voltage is supplied, voltage in the analog circuit with a long gate length is suppressed to prevent the damage of elements such as transistors in the digital circuit portion to which a signal is inputted from the analog circuit.

摘要翻译： 在半导体器件的模拟电路部分中使用的晶体管中，特别是在高频电路，电源电路和数据解调电路中使用的晶体管以及在数字电路部分（逻辑电路部分）中使用的晶体管的栅极长度 模拟电路部分中的晶体管不小于数字电路部分中的晶体管的栅极长度。 结果，当提供过电压时，抑制长栅极长度的模拟电路中的电压，以防止从模拟电路输入信号的数字电路部分中的晶体管等元件的损坏。

公开(公告)号：US20070290207A1

公开(公告)日：2007-12-20

申请号：US11802458

申请日：2007-05-23

申请人： Tomoaki Atsumi ,  Hiroki Inoue

发明人： Tomoaki Atsumi ,  Hiroki Inoue

IPC分类号： H01L29/94 ,  H01L21/20

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1296 ,  H01L28/40

摘要： In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.

摘要翻译： 在包括数字电路部分和具有设置在基板上的电容器部分的模拟电路部分的半导体器件中，电容器部分设置有第一布线，第二布线和多个具有多个电容器元件的块。 此外，设置在每个块中的多个电容器元件中的每一个具有半导体膜，该半导体膜具有第一杂质区和设置有分隔开第一杂质区的多个第二杂质区，并且在第一杂质区上设置有导电膜， 绝缘膜。 由第一杂质区，绝缘膜和导电膜形成电容器。

公开(公告)号：US20070229281A1

公开(公告)日：2007-10-04

申请号：US11717686

申请日：2007-03-14

申请人： Yutaka Shionoiri ,  Jun Koyama ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Takayuki Ikeda ,  Takeshi Osada ,  Tomoaki Atsumi ,  Masato Ishii

发明人： Yutaka Shionoiri ,  Jun Koyama ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Takayuki Ikeda ,  Takeshi Osada ,  Tomoaki Atsumi ,  Masato Ishii

IPC分类号： G08B13/14 ,  H04Q5/22

CPC分类号： H01Q1/2225 ,  G06K19/06037 ,  G06K19/0707 ,  H01L23/5227 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01M10/052 ,  H01M10/30 ,  H01M10/345 ,  H01M10/44 ,  H01Q1/248 ,  H01Q7/00 ,  H01Q9/285 ,  H01L2924/00

摘要： An object is to provide a semiconductor device including an RFID which can transmit/receive individual information without a change of a battery accompanied by deterioration over time of the battery as a drive power source, and to which driving power can be supplied to keep a favorable transmission/reception state of the individual information even when an external electromagnetic wave is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit and a second antenna circuit operationally connected to the signal processing circuit, and a battery operationally connected to the signal processing circuit, in which the first antenna circuit transmits/receives a signal for transmitting data stored in the signal processing circuit; the second antenna circuit receives a signal for charging the battery; and a signal received by the first antenna circuit and a signal received by the second antenna circuit have different wavelengths.

摘要翻译： 本发明的目的是提供一种包括RFID的半导体器件，其可以发送/接收个别信息，而不会随着电池的变化而随着电池的变化而变化，作为驱动电源，并且可以向其提供驱动电力以保持有利的 即使当外部电磁波不足时，个人信息的发送/接收状态。 半导体器件包括信号处理电路，第一天线电路和与信号处理电路可操作地连接的第二天线电路，以及可操作地连接到信号处理电路的电池，其中第一天线电路发送/接收用于发送的信号 存储在信号处理电路中的数据; 第二天线电路接收用于对电池充电的信号; 并且由第一天线电路接收的信号和由第二天线电路接收的信号具有不同的波长。

公开(公告)号：US20070229279A1

公开(公告)日：2007-10-04

申请号：US11716018

申请日：2007-03-09

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masato Ishii ,  Tomoaki Atsumi ,  Takeshi Osada ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Yutaka Shionoiri

IPC分类号： G08B13/14

CPC分类号： H01Q1/2225 ,  G06K19/0701 ,  G06K19/0702 ,  G06K19/0723 ,  G06K19/07767

摘要： The present invention provides a battery as a power supply for supplying power in the RFID, and another antenna for charging the battery, in addition to an antenna which transmits and receives individual information to and from outside as a means for supplying power to the battery.

摘要翻译： 本发明提供一种作为用于在RFID中供电的电源的电池，以及用于对电池充电的另一个天线，以及向外部发送和接收个人信息的天线作为向电池供电的装置。

公开(公告)号：US07067845B2

公开(公告)日：2006-06-27

申请号：US10006043

申请日：2001-12-04

申请人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

发明人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

IPC分类号： H01L31/36

CPC分类号： H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

摘要： In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit. the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.