公开(公告)号：US07155977B2

公开(公告)日：2007-01-02

申请号：US11253579

申请日：2005-10-20

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15/00 ,  G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A capacitance type semiconductor dynamic quantity sensor includes a substrate having a support layer and a semiconductor layer mounted on the support layer, a weight portion displaceable in a predetermined direction, movable electrodes joined to the weight portion so as to be displaceable integrally with the weight portion, fixed electrodes disposed so as to confront the movable electrodes and beam-shaped beam portions that are deformable elastically to displace the weight portion. When a dynamic quantity is applied, the distance between each movable electrode and each fixed electrode being varied, and the applied dynamic quantity being detected on the basis of the capacitance variation between both the electrodes which is caused by the variation of this distance. The thickness h2 of the beam portion is set to be larger than the thickness h1 of the movable electrode.

摘要翻译： 电容型半导体动态量传感器包括：具有支撑层和安装在支撑层上的半导体层的基板，可沿预定方向移位的重量部分，连接到重物部分的可移动电极，可与重物部分一体地移动 设置成面对可弹性变形以移动重物部分的可动电极和梁形梁部分的固定电极。 当施加动态量时，每个可移动电极和每个固定电极之间的距离是变化的，并且基于由该距离的变化引起的两个电极之间的电容变化而检测所施加的动态量。 梁部的厚度h 2被设定为大于可动电极的厚度h 1。

公开(公告)号：US07059190B2

公开(公告)日：2006-06-13

申请号：US10926147

申请日：2004-08-26

申请人： Minekazu Sakai ,  Tameharu Ohta

发明人： Minekazu Sakai ,  Tameharu Ohta

IPC分类号： G01P15/125

CPC分类号： G01P15/0802 ,  G01P15/125

摘要： An acceleration sensor is formed on a top surface of a laminated silicon-on-insulator substrate. The acceleration sensor is composed of first and second capacitors each including a movable electrode that moves according to acceleration imposed thereon. The first and the second capacitors are so made that their capacitances change differently when the same acceleration is imposed and that the capacitance difference represents an amount of acceleration imposed thereon. A third capacitor having an output electrode solidly connected to the base substrate via the insulation layer is also formed on the same silicon-on-insulator substrate. An output representing amount of acceleration is taken out from the output electrode of the third capacitor.

摘要翻译： 加速度传感器形成在层叠绝缘体上硅衬底的顶表面上。 加速度传感器由第一和第二电容器组成，每个电容器包括根据施加的加速度移动的可动电极。 第一和第二电容器被制成使得当施加相同的加速度时，其电容变化不同，并且电容差表示施加的加速度量。 具有通过绝缘层与基底基板牢固地连接的输出电极的第三电容器也形成在同一绝缘体上的衬底上。 从第三电容器的输出电极取出表示加速度的输出。

公开(公告)号：US20060107742A1

公开(公告)日：2006-05-25

申请号：US11253579

申请日：2005-10-20

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： A capacitance type semiconductor dynamic quantity sensor includes a substrate having a support layer and a semiconductor layer mounted on the support layer, a weight portion displaceable in a predetermined direction, movable electrodes joined to the weight portion so as to be displaceable integrally with the weight portion, fixed electrodes disposed so as to confront the movable electrodes and beam-shaped beam portions that are deformable elastically to displace the weight portion. When a dynamic quantity is applied, the distance between each movable electrode and each fixed electrode being varied, and the applied dynamic quantity being detected on the basis of the capacitance variation between both the electrodes which is caused by the variation of this distance. The thickness h2 of the beam portion is set to be larger than the thickness h1 of the movable electrode.

摘要翻译： 电容型半导体动态量传感器包括：具有支撑层和安装在支撑层上的半导体层的基板，可沿预定方向移位的重量部分，连接到重物部分的可移动电极，可与重物部分一体地移动 设置成面对可弹性变形以移动重物部分的可动电极和梁形梁部分的固定电极。 当施加动态量时，每个可移动电极和每个固定电极之间的距离是变化的，并且基于由该距离的变化引起的两个电极之间的电容变化而检测所施加的动态量。 梁部的厚度h 2被设定为大于可动电极的厚度h 1。

公开(公告)号：US07004029B2

公开(公告)日：2006-02-28

申请号：US10856858

申请日：2004-06-01

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15/125 ,  G01P15/00

CPC分类号： G01P15/125

摘要： In a semiconductor acceleration sensor (S1), above one side of a first silicon substrate (10) made of a semiconductor and serving as a fixed electrode (11), a moving electrode (20) made of a semiconductor and displaceable in the thickness direction of the first silicon substrate (10) is disposed apart from and facing the first silicon substrate (10). An applied acceleration is detected on the basis of capacitance changes between the moving electrode (20) and the face of the first silicon substrate (10) accompanying displacement of the moving electrode (20). A space and an electrically insulative insulating layer (13) having a relative permittivity larger than that of air are interposed between the moving electrode (20) and the face of the first silicon substrate (10), side by side in the direction in which the moving electrode (20) and the first silicon substrate (10) are apart.

摘要翻译： 在半导体加速度传感器（S1）中，在由半导体制成并用作固定电极（11）的第一硅衬底（10）的一侧上方，由半导体制成的可移动的厚度的移动电极（20） 第一硅衬底（10）的方向与第一硅衬底（10）分开并面对第一硅衬底（10）。 基于移动电极（20）与伴随移动电极（20）移动的第一硅衬底（10）的面之间的电容变化来检测施加的加速度。 具有相对介电常数大于空气的空间和绝缘绝缘层（13）被插入到移动电极（20）和第一硅衬底（10）的表面之间，并且 移动电极（20）和第一硅衬底（10）分开。

公开(公告)号：US20050263838A1

公开(公告)日：2005-12-01

申请号：US11137435

申请日：2005-05-26

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P21/00 ,  B81B7/02 ,  G01P15/125 ,  H01L29/84

CPC分类号： G01P15/125

摘要： When movable electrodes of beam arrangement structures are displaced in a direction perpendicular to the surface of a support substrate in first and second capacitance constituent portions by action of an acceleration while carrier voltages are applied, the difference between a first capacitance and second capacitance is output from the support substrate through a third capacitance constituent portion. Under self-diagnosis, the voltage applying counter electrode portion of the self-diagnosis fixed capacitance constituent portion is set to a first potential, and a signal output counter electrode portion of the third capacitance constituent portion is set to a second potential different from the first potential, whereby the potential of the support substrate corresponding to the fixed electrode in the first and second capacitance constituent portions is forcedly changed.

摘要翻译： 当施加载波电压时，通过加速度的作用，在布置结构的可移动电极在第一和第二电容构成部分的垂直于支撑基板的表面的方向上位移时，第一电容和第二电容之间的差从 支撑基板通过第三电容构成部分。 在自诊断下，将自诊断固定电容构成部分的电压施加对电极部分设定为第一电位，将第三电容构成部分的信号输出对置电极部分设定为与第一电位不同的第二电位 电位，由此强制地改变与第一和第二电容构成部分中的固定电极相对应的支撑衬底的电位。

公开(公告)号：US20050076714A1

公开(公告)日：2005-04-14

申请号：US10926147

申请日：2004-08-26

申请人： Minekazu Sakai ,  Tameharu Ohta

发明人： Minekazu Sakai ,  Tameharu Ohta

IPC分类号： G01P15/08 ,  G01P15/125 ,  G01P15/00

CPC分类号： G01P15/0802 ,  G01P15/125

摘要： An acceleration sensor is formed on a top surface of a laminated silicon-on-insulator substrate. The acceleration sensor is composed of first and second capacitors each including a movable electrode that moves according to acceleration imposed thereon. The first and the second capacitors are so made that their capacitances change differently when the same acceleration is imposed and that the capacitance difference represents an amount of acceleration imposed thereon. A third capacitor having an output electrode solidly connected to the base substrate via the insulation layer is also formed on the same silicon-on-insulator substrate. An output representing amount of acceleration is taken out from the output electrode of the third capacitor.

摘要翻译： 加速度传感器形成在层叠绝缘体上硅衬底的顶表面上。 加速度传感器由第一和第二电容器组成，每个电容器包括根据施加的加速度移动的可动电极。 第一和第二电容器被制成使得当施加相同的加速度时，其电容变化不同，并且电容差表示施加的加速度量。 具有通过绝缘层与基底基板牢固地连接的输出电极的第三电容器也形成在同一绝缘体上的衬底上。 从第三电容器的输出电极取出表示加速度的输出。

公开(公告)号：US06373093B1

公开(公告)日：2002-04-16

申请号：US09776769

申请日：2001-02-06

申请人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

发明人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC分类号： H01L2976

摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

公开(公告)号：US6020618A

公开(公告)日：2000-02-01

申请号：US758259

申请日：1996-11-27

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： H01L21/3063 ,  H01L29/82 ,  H01L29/06

CPC分类号： H01L21/3063

摘要： A semiconductor device such as a semiconductor dynamic sensor which is produced at an improved chip yield is provided. Etching wiring having a main line and a branch line is formed on a chip region via an intervening insulating film. The chip region contains an N-type reduced thickness region and is surrounded by a P-type chip isolating layer. The etching wiring is formed with a gap (an etching wiring gap) from other etching wiring members or circuit wiring formed on the chip region via an intervening insulating film. The etching wiring gap is greater than any of the gaps between members of the circuit wiring.

摘要翻译： 提供了以提高的芯片产量生产的诸如半导体动态传感器的半导体器件。 通过中间绝缘膜在芯片区域上形成具有主线和分支线的蚀刻布线。 芯片区域包含N型缩小厚度的区域，被P型芯片隔离层包围。 蚀刻布线形成有与其它蚀刻布线构件或通过中间绝缘膜形成在芯片区域上的电路布线的间隙（蚀刻布线间隙）。 蚀刻布线间隙大于电路布线的构件之间的任何间隙。

公开(公告)号：US5063423A

公开(公告)日：1991-11-05

申请号：US567760

申请日：1990-08-15

申请人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

发明人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC分类号： H01L21/28 ,  H01L29/788

CPC分类号： H01L21/28273 ,  H01L29/7883

摘要： A tunnel insulating film of a three-layer structure, wherein an oxide film is interposed between nitrided oxide films, is formed on the surface of a semiconductor substrate. A first polysilicon film serving as a low-concentration impurity region is formed on the tunnel insulating film. An oxide film is formed on that region of the first polysilicon film, which corresponds to the tunnel insulating film, the oxide film having such a thickness that the film can serve as a stopper for impurity diffusion and can allow electrons to pass through. A second polysilicon film, having an impurity concentration higher than that of the first polysilicon film, is formed on the oxide film. The first and second polysilicon films constitute a floating gate. A third polysilicon film serving as a control gate is formed above the second polysilicon film, with an insulating layer interposed therebetween.

摘要翻译： 在半导体衬底的表面上形成三层结构的隧道绝缘膜，其中在氮化氧化物膜之间插入氧化膜。 在隧道绝缘膜上形成用作低浓度杂质区的第一多晶硅膜。 在第一多晶硅膜的与隧道绝缘膜相对应的区域上形成氧化膜，氧化膜具有使膜能够作为用于杂质扩散的阻挡层的厚度，并且可以使电子通过。 在氧化膜上形成杂质浓度高于第一多晶硅膜的第二多晶硅膜。 第一和第二多晶硅膜构成浮栅。 用作控制栅极的第三多晶硅膜形成在第二多晶硅膜上方，绝缘层位于其间。

公开(公告)号：US5017979A

公开(公告)日：1991-05-21

申请号：US344605

申请日：1989-04-28

申请人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

发明人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC分类号： H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/7883

摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

摘要翻译： 在半导体衬底的表面上形成栅极氧化膜。 在对应于隧道区域的部分中形成厚度小于栅极绝缘膜厚度的隧道绝缘膜。 在栅极绝缘膜上形成杂质浓度低的第一硅膜。 在第一硅膜上形成杂质浓度高于第一硅膜的第二硅膜，以便与第一硅膜连接。 通过绝缘膜在第二硅膜上形成第三硅膜。 第二和第三硅膜分别形成浮动和控制栅极，从而形成半导体存储器件。