公开(公告)号：US07527908B2

公开(公告)日：2009-05-05

申请号：US11398662

申请日：2006-04-06

申请人： Hitoshi Iwatsuki ,  Tomio Kondou ,  Shinichiro Yagi ,  Kousuke Suzuki

发明人： Hitoshi Iwatsuki ,  Tomio Kondou ,  Shinichiro Yagi ,  Kousuke Suzuki

IPC分类号： G03G9/10

CPC分类号： G03G9/1131 ,  G03G9/1075 ,  G03G9/1133 ,  G03G9/1136 ,  G03G9/1139

摘要： A carrier contains a core material; and a coated film containing a binder resin, and a particulate material, the coated film covering the core material, wherein a ratio (D/h) of an average particle diameter (D) of the particulate material to an average thickness (h) of the coated film is from 0.01 to 1, and wherein the carrier has concavities and convexities on the surface of the carrier, the concavities and convexities having a difference of elevation of from 0.05 to 2.0 μm.

摘要翻译： 载体包含核心材料; 以及包含粘合剂树脂的涂膜和覆盖芯材的涂覆膜的颗粒材料，其中颗粒材料的平均粒径（D）与平均厚度（d）的比（D / h）相对于 涂膜为0.01〜1，载体在载体表面具有凹凸，凹凸的差异为0.05〜2.0μm。

公开(公告)号：US20080096121A1

公开(公告)日：2008-04-24

申请号：US11870613

申请日：2007-10-11

申请人： Hitoshi IWATSUKI ,  Tomio Kondou ,  Shinichiro Yagi ,  Masashi Nagayama

发明人： Hitoshi IWATSUKI ,  Tomio Kondou ,  Shinichiro Yagi ,  Masashi Nagayama

IPC分类号： G03G9/093 ,  G03G15/08

CPC分类号： G03G9/1131 ,  G03G9/1133 ,  G03G9/1136 ,  G03G9/1139 ,  G03G15/0822 ,  G03G15/0879 ,  G03G2215/066

摘要： A carrier for use in an image forming apparatus in which a toner and a carrier are fed to an image developer thereof and an extra developer including the toner and the carrier in the image developer is discharged therefrom, wherein at least one of the carrier fed to the image developer and a carrier readily contained therein includes a core material; and a coated film coating the core material, and wherein the coated film includes a binder resin and a particulate material having a ratio of an average particle diameter thereof to an average thickness of the coated film of from 0.01 to 1, and includes concavities and convexities having an average difference of elevation of from 0.02 to 3.0 μm.

摘要翻译： 将其中将调色剂和载体供给到其图像显影剂的图像形成装置中使用的载体和包含调色剂和载体的额外的显影剂从图像显影剂中排出，其中至少一个载体供给 图像显影剂和容易包含的载体包括芯材料; 以及涂覆该芯材的涂膜，其中涂膜包括粘合剂树脂和其平均粒径与涂膜平均厚度之比为0.01至1的颗粒材料，并且包括凹凸 平均海拔差为0.02〜3.0μm。

公开(公告)号：US20070015078A1

公开(公告)日：2007-01-18

申请号：US11270731

申请日：2005-11-10

申请人： Kousuke Suzuki ,  Tomio Kondou ,  Shinichiro Yagi ,  Hitoshi Iwatsuki

发明人： Kousuke Suzuki ,  Tomio Kondou ,  Shinichiro Yagi ,  Hitoshi Iwatsuki

IPC分类号： G03G9/113

CPC分类号： G03G9/1139

摘要： The object of the present invention is to provide a carrier for electrophotography which includes a core material and a coating layer comprising particles on a surface of the core material, in which the carrier for electrophotography comprises indium (In) in an amount of 0.0001% by mass to 0.5% by mass. The present invention also provides a developer using the carrier, a developer container, an image forming method, an image forming apparatus, and a process cartridge in each of which the carrier is used.

摘要翻译： 本发明的目的是提供一种用于电子照相的载体，其包括芯材料和在芯材表面上包含颗粒的涂层，其中电子照相用载体包含0.0001％的铟（In），其量为0.0001％ 质量至0.5质量％。 本发明还提供一种使用载体，显影剂容器，图像形成方法，图像形成装置和处理盒的显影剂，其中每个使用载体。

公开(公告)号：US08697326B2

公开(公告)日：2014-04-15

申请号：US13169406

申请日：2011-06-27

申请人： Kousuke Suzuki ,  Shinichiro Yagi ,  Masato Taikoji ,  Masanori Rimoto

发明人： Kousuke Suzuki ,  Shinichiro Yagi ,  Masato Taikoji ,  Masanori Rimoto

IPC分类号： G03G5/00 ,  G03G9/00

CPC分类号： G03G9/09392 ,  G03G9/09357 ,  G03G9/09371

摘要： A method of manufacturing a carrier including covering a core material with a covering material to form a covering layer on the core material and baking the covering material by heating the core material by high frequency induction applied thereto by a high frequency induction heating device.

摘要翻译： 一种制造载体的方法，包括用覆盖材料覆盖芯材以在芯材上形成覆盖层，并通过利用高频感应加热装置施加到其上的高频感应加热芯材来烘烤覆盖材料。

公开(公告)号：US20130078567A1

公开(公告)日：2013-03-28

申请号：US13625422

申请日：2012-09-24

申请人： Takayuki Shimizu ,  Kazumi Ohtaki ,  Shinichiro Yagi ,  Takeshi Sako ,  Idzumi Okajima

发明人： Takayuki Shimizu ,  Kazumi Ohtaki ,  Shinichiro Yagi ,  Takeshi Sako ,  Idzumi Okajima

IPC分类号： G03G9/113

CPC分类号： G03G9/10 ,  G03G9/107 ,  G03G9/1131 ,  G03G9/1139

摘要： A method for regenerating a carrier core material for electrophotography, including: treating a carrier for electrophotography including a carrier core material for electrophotography and a coating layer on a surface of the carrier core material for electrophotography with an aqueous solution including an oxidant in a subcritical state or a supercritical state having a temperature of 280° C. or greater and a density of 0.20 g/cm3 or greater, wherein an amount of the oxidant in a total amount of the aqueous solution used in the treating is greater than 0.05 parts by mass with respect to 1 part by mass of the carrier for electrophotography to be treated in the treating.

摘要翻译： 一种电子照相用载体芯材的再生方法，其特征在于，包括：在包含亚临界状态的氧化剂的水溶液中处理电子照相用载体，包括电子照相用载体芯材和涂层用载体芯材的表面， 或具有280℃以上的温度和0.20g / cm 3以上的密度的超临界状态，其中，处理中使用的水溶液的总量中的氧化剂的量大于0.05质量份 相对于1质量份的待处理电子照相用载体。

公开(公告)号：US20090042364A1

公开(公告)日：2009-02-12

申请号：US12223026

申请日：2007-01-15

申请人： Shinichiro Yagi

发明人： Shinichiro Yagi

IPC分类号： H01L21/70

CPC分类号： H01L21/76254

摘要： The present invention provides a method for manufacturing an SOI wafer in which a thickness of an SOI layer is increased by growing an epitaxial layer on the SOI layer of the SOI wafer having an oxide film and the SOI layer formed on a base wafer, wherein the epitaxial growth is performed in such a manner that a reflectivity of a surface of the SOI wafer on which the epitaxial layer is grown in a wavelength region of a heating light at the start of the epitaxial growth falls within the range of 30% to 80%. As a result, in the method for manufacturing the SOI wafer in which a thickness of the SOI layer is increased by growing the epitaxial layer on the SOI layer of the SOI wafer having the oxide film and the SOI layer formed on the base wafer, a method for manufacturing a high-quality SOI wafer with less slip dislocation and others is provided.

摘要翻译： 本发明提供一种制造SOI晶片的方法，其中通过在具有氧化膜的SOI晶片和形成在基底晶片上的SOI层的SOI层上生长外延层来增加SOI层的厚度，其中， 以在外延生长开始时在加热光的波长区域内生长外延层的SOI晶片的表面的反射率落在30％〜80％的范围内的方式进行外延生长， 。 结果，在通过在具有形成在基底晶片上的具有氧化物膜和SOI层的SOI晶片的SOI层上生长外延层来增加SOI层的厚度的SOI晶片的制造方法中， 提供了制造具有较少滑动位错等的高品质SOI晶片的方法。

公开(公告)号：US20070122323A1

公开(公告)日：2007-05-31

申请号：US10582860

申请日：2004-11-18

申请人： Toru Yamada ,  Shinichiro Yagi

发明人： Toru Yamada ,  Shinichiro Yagi

IPC分类号： A61K39/02 ,  B01D5/00 ,  B01D12/00

CPC分类号： C23C16/45587 ,  C30B25/14 ,  C30B29/06

摘要： A vapor growth device which is constituted as a single-wafer type and has a gas introducing port through which a material gas is led into a reaction vessel. A dam member is disposed around a susceptor, and the material gas from the gas introducing port hits the outer peripheral surface of the dam ring and rides on an upper surface side, and then is allowed to flow along the main surface of a silicon single-crystal substrate placed on the susceptor. Guide plates for dividing the flow in the width direction of the material gas are disposed on the upper surface of the dam member. Accordingly, a vapor growth device capable of controlling the flow rate of material gas flowing on a silicon single-crystal substrate, and a production method for an epitaxial wafer using it are provided.

摘要翻译： 一种气相生长装置，其构成为单晶片型，具有气体导入口，通过该气体导入口将原料气体引入反应容器。 堤坝构件设置在基座周围，并且来自气体导入口的原料气体撞击坝环的外周面，并且在上表面侧抵接，然后沿着单面硅单元的主表面流动， 晶体衬底放置在基座上。 用于在材料气体的宽度方向上划分流动的导向板设置在坝构件的上表面上。 因此，提供了能够控制在硅单晶衬底上流动的原料气体的流量的气相生长装置及其使用的外延晶片的制造方法。

公开(公告)号：US20060210906A1

公开(公告)日：2006-09-21

申请号：US11378424

申请日：2006-03-20

申请人： Kousuke Suzuki ,  Tomio Kondoh ,  Shinichiro Yagi ,  Hitoshi Iwatsuki

发明人： Kousuke Suzuki ,  Tomio Kondoh ,  Shinichiro Yagi ,  Hitoshi Iwatsuki

IPC分类号： G03G9/113

CPC分类号： G03G9/1139 ,  G03G9/10 ,  G03G9/1138

摘要： A carrier contains a core; and a cover layer located overlying the core, wherein the cover layer comprises a binder resin, a first particulate material and a second particulate material,wherein the following relationships are satisfied: 1

摘要翻译： 载体包含核心; 覆盖层位于芯的上方，其中覆盖层包括粘合剂树脂，第一颗粒材料和第二颗粒材料，其中满足以下关系：1 <（D1 / h）<10和0.001 <（D2 / h）<1，其中D1（mum）表示第一颗粒材料的体积平均粒径，D2（母体）表示第二颗粒材料的体积平均粒径，h（mum）表示覆盖物的厚度 层，并且其中所述第二颗粒材料具有不大于1.0×10 12Ω·cm的体积电阻率。

公开(公告)号：US06753955B2

公开(公告)日：2004-06-22

申请号：US09914044

申请日：2001-12-11

申请人： Shinichiro Yagi

发明人： Shinichiro Yagi

IPC分类号： G01N2100

CPC分类号： C30B29/06 ,  C30B33/00 ,  G01N21/9501 ,  H01L22/24

摘要： An inspection object silicon wafer for the purpose of detecting crystal defects and the method of detection thereof, which make easy the detection of the number and location of the defects formed on the surface of the silicon wafer by performing heat treatment and epitaxial growth under a temperature condition in which the natural oxide film is removed but the state of the surface of the silicon wafer is preserved, specifically under a hydrogen atmosphere of normal pressure and a temperature between 900° C. and 1080° C., through which defects having pits and projections are generated on the surface of the epitaxial layer, and by detecting the defects having pits and protrusions by a light scattering type particle inspection apparatus.

摘要翻译： 用于检测晶体缺陷的检查对象硅晶片及其检测方法，其容易地通过在温度下进行热处理和外延生长来检测形成在硅晶片表面上的缺陷的数量和位置 特别是在常压氢气氛和900℃至1080℃之间的温度下保存除去硅晶片表面的状态的状态，通过该状态，具有凹坑和 在外延层的表面产生突起，通过光散射型粒子检查装置检测具有凹坑和突起的缺陷。

公开(公告)号：US5879849A

公开(公告)日：1999-03-09

申请号：US882214

申请日：1997-06-25

申请人： Akira Sawada ,  Kanjiroh Kawasaki ,  Shinichiro Yagi

发明人： Akira Sawada ,  Kanjiroh Kawasaki ,  Shinichiro Yagi

IPC分类号： G03G9/08 ,  G03G9/097 ,  G03G13/08 ,  G03G15/08

CPC分类号： G03G9/09725 ,  G03G13/08 ,  G03G9/09733 ,  Y10S430/104

摘要： A developing device using one component developer for developing an electrostatic latent image on a photoconductive drum. The one component developer includes particles of parents of toner, resin beads and silica. The silica adhere to a surface of each resin bead. The resin beads and the silica further adhere to a surface of the parents of toner. A volume average diameter of the resin beads is more than that of the silica and is less than that of the parents of toner.

摘要翻译： 一种显影装置，其使用一种组分显影剂来在感光鼓上显影静电潜像。 单组分显影剂包括调色剂，树脂珠和二氧化硅的母体颗粒。 二氧化硅粘附到每个树脂珠的表面上。 树脂珠和二氧化硅进一步粘附到调色剂的母体的表面上。 树脂珠的体积平均直径大于二氧化硅的体积平均直径，并且小于调色剂的母体的体积平均直径。