公开(公告)号：US09219004B2

公开(公告)日：2015-12-22

申请号：US13819993

申请日：2011-08-24

申请人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

发明人： Hubert Moriceau ,  Maxime Argoud ,  Christophe Morales ,  Marc Zussy

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L21/762 ,  H01L21/20 ,  H01L21/683 ,  H01L21/68

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/68 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76224

摘要： A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material.

摘要翻译： 一种用于获得由聚合物载体上的第一材料制成的膜的方法，所述方法包括将第一晶片接合到第二晶片，由此限定所述第一晶片和所述第二晶片之间的结合界面，所述第一和第二晶片中的至少一个 第二晶片包括位于所述接合界面附近的所述第一材料层，在所述第一晶片中，挖空出空腔，所述空腔包括平行于所述结合界面的底部，所述底部在所述第一晶片中在 在所述空腔中形成从其底部控制的厚度的聚合物层以获得组合的晶片部分，所述组合的晶片部分包括由所述底部上的所述聚合物层形成的底部区域和 周边区域，并且在其厚度的主要部分上消除所述第二晶片，从而在所述聚合物层下方释放包含所述第一材料层的膜 ial

公开(公告)号：US08906780B2

公开(公告)日：2014-12-09

申请号：US13805796

申请日：2011-06-21

申请人： Maxime Argoud ,  Hubert Moriceau ,  Christian Fretigny

发明人： Maxime Argoud ,  Hubert Moriceau ,  Christian Fretigny

IPC分类号： H01L21/30 ,  C23C14/48 ,  C23C14/00 ,  B32B38/00 ,  H01L21/762

CPC分类号： B32B38/0008 ,  C23C14/0005 ,  C23C14/48 ,  H01L21/76254 ,  Y02P20/582

摘要： A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.

摘要翻译： 从单晶硅供体衬底的自由面转移薄层的单晶硅供体衬底的方法，其厚度大于薄层厚度的方法包括通过自由面注入离子以在硅中形成掩埋的脆性层，使用聚合物 将供体衬底通过自由表面接合到接收器基板，并且通过热断裂处理在掩埋脆性层处从施主衬底压裂薄层，并且选择注入条件使得薄层的厚度为 小于10微米，并且聚合物层的厚度低于作为注入能量和剂量的函数定义的临界阈值，临界阈值小于或等于500纳米的较小值和薄层的厚度。

公开(公告)号：US08481409B2

公开(公告)日：2013-07-09

申请号：US11233785

申请日：2005-09-23

申请人： Hubert Moriceau ,  Bernard Aspar ,  Eric Jalaguier ,  Fabrice Letertre

发明人： Hubert Moriceau ,  Bernard Aspar ,  Eric Jalaguier ,  Fabrice Letertre

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps: a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face, b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate, c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face, d) putting a face of the target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support, e) removal of at least part of the intermediate support in order to obtain the said stacked structure.

摘要翻译： 本发明涉及一种用于制造堆叠结构的方法，该堆叠结构包括至少一个结合到目标衬底的薄层，包括以下步骤：a）从初始衬底形成薄层，该薄层具有称为“ 第一接触面，b）使第一接触面与中间支撑体的表面接合，所获得的结构与初始衬底的稍后变薄相容，c）使所述初始衬底变薄以暴露出所述初始衬底的自由面 称为第二接触面并与第一接触面相对的薄层，d）使目标基板的表面与第二接触面的至少一部分接合，所获得的结构与以后的全部或部分 中间支撑件，e）去除至少部分中间支撑件以获得所述堆叠结构。

公开(公告)号：US08382933B2

公开(公告)日：2013-02-26

申请号：US12068638

申请日：2008-02-08

申请人： Frank Fournel ,  Hubert Moriceau ,  Christophe Morales ,  Pierre Perreau

发明人： Frank Fournel ,  Hubert Moriceau ,  Christophe Morales ,  Pierre Perreau

IPC分类号： B08B3/00 ,  B29C65/00 ,  B32B37/00 ,  B32B38/00

CPC分类号： H01L21/02049 ,  H01L21/187

摘要： Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.

摘要翻译： 通过例如由单晶硅晶片形成的第一和第二基板的两个自由表面的分子结合的粘附性至少包括：两个自由表面的清洁步骤，其中气相中的氢氟酸使两个自由表面疏水， 用去离子水冲洗所述游离表面的时间小于或等于30秒，使所述自由表面接触的步骤。

公开(公告)号：US08318586B2

公开(公告)日：2012-11-27

申请号：US12994792

申请日：2009-04-28

申请人： Laure Libralesso ,  Hubert Moriceau ,  Christophe Morales ,  François Rieutord ,  Caroline Ventosa ,  Thierry Chevolleau

发明人： Laure Libralesso ,  Hubert Moriceau ,  Christophe Morales ,  François Rieutord ,  Caroline Ventosa ,  Thierry Chevolleau

IPC分类号： H01L21/30 ,  H01L21/31

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

摘要翻译： 通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。 薄膜由电感耦合等离子体源产生的氮基等离子体进行。 此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差​​小于50V，有利地小于15V，优选为零。 这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

公开(公告)号：US08288250B2

公开(公告)日：2012-10-16

申请号：US12564597

申请日：2009-09-22

申请人： Laurent Clavelier ,  Chrystel Deguet ,  Patrick Leduc ,  Hubert Moriceau

发明人： Laurent Clavelier ,  Chrystel Deguet ,  Patrick Leduc ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/7813 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.

摘要翻译： 一种用于制造至少两级电路的堆叠的方法，每个级包括衬底和形成在该衬底中或之上的至少一个部件和金属连接，待传送到前一级的级的组件，包括：a） 通过至少部分组分转移到待转移阶段的衬底中的离子注入，以便形成弱化区，b）形成组分的金属连接，c）将该衬底中的一些衬底转移并组装到先前的 阶段，以及d）通过沿着弱化区域的断裂来稀释基底的转移部分的步骤。

公开(公告)号：US20110129986A1

公开(公告)日：2011-06-02

申请号：US12994792

申请日：2009-04-28

申请人： Laure Libralesso ,  Hubert Moriceau ,  Christophe Morales ,  Francois Rieutord ,  Caroline Ventosa ,  Thierry Chevolleau

发明人： Laure Libralesso ,  Hubert Moriceau ,  Christophe Morales ,  Francois Rieutord ,  Caroline Ventosa ,  Thierry Chevolleau

IPC分类号： H01L21/30

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.

摘要翻译： 通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。 薄膜由电感耦合等离子体源产生的氮基等离子体进行。 此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差​​小于50V，有利地小于15V，优选为零。 这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

公开(公告)号：US07879690B2

公开(公告)日：2011-02-01

申请号：US12413130

申请日：2009-03-27

申请人： Emmanuel Augendre ,  Thomas Ernst ,  Marek Kostrzewa ,  Hubert Moriceau

发明人： Emmanuel Augendre ,  Thomas Ernst ,  Marek Kostrzewa ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.

摘要翻译： 通过形成包括形成衬底的板，连续绝缘层和半导体层的层叠均匀结构，来产生具有不同图案的绝缘体半导体型微结构。 连续绝缘层是至少三个基本层的堆叠，包括底部基本层，至少一个中间基本层和覆盖半导体层的顶部基本层，其中底部基本层和顶部基本层中的至少一个 层是绝缘材料。 在层叠的均匀结构中，通过修改其中一个图案中的至少一个基本层来区分至少两个图案，使得元件层在两个图案之间具有显着不同的物理或化学性质，其中至少一个 底部和顶部基本层是保持不变的绝缘材料。

公开(公告)号：US07781300B2

公开(公告)日：2010-08-24

申请号：US11576743

申请日：2005-10-06

申请人： Hubert Moriceau ,  Franck Fournel ,  Christophe Morales

发明人： Hubert Moriceau ,  Franck Fournel ,  Christophe Morales

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/76224

摘要： The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.

摘要翻译： 本发明涉及一种用于制造半导体结构的方法，包括：通过掩模（31）在绝缘材料（36）中的至少一个第一区域的半导体材料的第一衬底（30）中控制形成 到达掩模的下表面（35）的水平面前，或在去除掩模期间。

公开(公告)号：US20100081280A1

公开(公告)日：2010-04-01

申请号：US12515021

申请日：2007-11-28

申请人： Hubert Moriceau ,  Sylvie Satori ,  Anne-Marie Charvet

发明人： Hubert Moriceau ,  Sylvie Satori ,  Anne-Marie Charvet

IPC分类号： H01L21/306

CPC分类号： H01L21/31053 ,  H01L21/76208 ,  H01L21/76251

摘要： The invention concerns a method of producing a mixed substrate, that is to say a substrate comprising at least one block of material different from the material of the substrate, the method comprising the following successive steps: formation of a cavity in a substrate of first material, and from one of its faces, the formation of the cavity being carried out so as to leave at least part of the first material projecting from the bottom of the cavity, formation of the block by means of a reaction, initiated from the walls of the cavity, between the first material and at least one chemical element contributed in order to obtain a second material filling the cavity, the formation of the block being carried out so as to obtain, from the part of the first material projecting, a protrusion of second material projecting on said face of the substrate.

摘要翻译： 本发明涉及一种生产混合基质的方法，也就是说基底包含至少一块不同于基底材料的材料块，该方法包括以下连续步骤：在第一材料的基底中形成空腔 ，并且从其一个表面，形成腔体，以便使至少部分第一材料从空腔的底部突出，通过反应形成块体，其由壁的壁 所述第一材料和所述至少一种化学元素之间的空腔用于获得填充所述空腔的第二材料，所述块的形成被执行以便从所述第一材料的所述部分突出得到 在所述基板的所述面上突出的第二材料。