公开(公告)号：US20150004778A1

公开(公告)日：2015-01-01

申请号：US13929955

申请日：2013-06-28

Applicant: International Business Machines Corporation

Inventor： ALAN B. BOTULA ,  Jeffrey E. Hanrahan ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Dale W. Martin ,  Gerd Pfeiffer ,  James A. Slinkman

IPC: H01L21/04

CPC classification number: H01L21/76251 ,  H01L21/04 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324

Abstract: According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

公开(公告)号：US20140306325A1

公开(公告)日：2014-10-16

申请号：US14313444

申请日：2014-06-24

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L29/06

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract translation: 硅器件包括有源硅层，有源硅层下面的掩埋氧化物（BOX）层和BOX层下面的高电阻率硅层。 该装置还包括在BOX层和高电阻率硅层的边界处的谐波抑制层。

公开(公告)号：US08828746B2

公开(公告)日：2014-09-09

申请号：US13676817

申请日：2012-11-14

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Richard A. Phelps ,  James Slinkman ,  Randy L. Wolf

IPC: H01L21/02

CPC classification number: H01L29/0603 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/84 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1203 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

Abstract translation: 硅器件包括有源硅层，有源硅层下面的掩埋氧化物（BOX）层和BOX层下面的高电阻率硅层。 该装置还包括在BOX层和高电阻率硅层的边界处的谐波抑制层。

公开(公告)号：US20140124902A1

公开(公告)日：2014-05-08

申请号：US14151582

申请日：2014-01-09

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph

IPC: H01L29/16

CPC classification number: H01L29/16 ,  H01L21/76254

Abstract: A semiconductor structure and a method of forming the same. In one embodiment, a method of forming a silicon-on-insulator (SOI) wafer substrate includes: providing a handle substrate; forming a high resistivity material layer over the handle substrate, the high resistivity material layer including one of an amorphous silicon carbide (SiC), a polycrystalline SiC, an amorphous diamond, or a polycrystalline diamond; forming an insulator layer over the high resistivity material layer; and bonding a donor wafer to a top surface of the insulator layer to form the SOI wafer substrate.

Abstract translation: 半导体结构及其形成方法。 在一个实施例中，形成绝缘体上硅（SOI）晶片衬底的方法包括：提供处理衬底; 在所述手柄衬底上形成高电阻率材料层，所述高电阻率材料层包括非晶碳化硅（SiC），多晶SiC，无定形金刚石或多晶金刚石中的一种; 在所述高电阻率材料层上形成绝缘体层; 并将施主晶片接合到绝缘体层的顶表面以形成SOI晶片衬底。