公开(公告)号：US20050088080A1

公开(公告)日：2005-04-28

申请号：US10903678

申请日：2004-07-30

Applicant: Jia-Shyong Cheng ,  Chung-Chih Wu ,  Ping-Yuan Hsieh ,  Huo-Hsien Chiang ,  Chieh-Wei Chen

Inventor： Jia-Shyong Cheng ,  Chung-Chih Wu ,  Ping-Yuan Hsieh ,  Huo-Hsien Chiang ,  Chieh-Wei Chen

IPC: H05B33/26 ,  H01J1/62 ,  H01J63/04 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H01L51/52 ,  H05B33/14 ,  H05B33/22

CPC classification number: H01L51/5092 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5088 ,  H01L51/5218 ,  H01L51/5221 ,  H01L2251/5315

Abstract: An organic light emitting diode is provided. The organic light emitting diode includes a substrate, an electrode structure formed on said substrate, an organic layer formed on said electrode structure and a transparent electrode structure having at least one transparent dielectric layer with a relatively higher refraction index and deposited on said organic layer by thermal evaporation.

Abstract translation: 提供有机发光二极管。 有机发光二极管包括基板，形成在所述基板上的电极结构，形成在所述电极结构上的有机层和透明电极结构，所述透明电极结构具有至少一个具有相对较高折射率的透明介电层，并通过 热蒸发。

公开(公告)号：US06642071B2

公开(公告)日：2003-11-04

申请号：US10291065

申请日：2002-11-08

Applicant: Jia-Shyong Cheng

Inventor： Jia-Shyong Cheng

IPC: H01L2100

CPC classification number: G02F1/134363

Abstract: A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode. The transparent pixel electrode disconnects to but overlaps the protection layer

Abstract translation: 提供TFT阵列基板及其制造方法。 阵列上的多个TFT形成在基板上。 依次形成栅极绝缘层和保护层以覆盖基板的像素区域。 在栅绝缘层和保护层中形成有多个开口，每个开口具有底切轮廓。 然后，在衬底上形成透明导电层。 分离的两个部件中的一个位于开口的底部，另一个位于保护层上，使得透明导电层的两个部分断开并且不发生连接。 将开口底部的透明导电层的一部分称为透明像素电极。 保护层上的透明导电层的一部分连接到公共金属线以形成透明公共电极。 透明像素电极断开，但与保护层重叠

公开(公告)号：US06057187A

公开(公告)日：2000-05-02

申请号：US164354

申请日：1998-10-01

Applicant: Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

IPC: H01L27/108 ,  H10L21/8242

CPC classification number: H01L27/10805 ,  H01L27/10808 ,  Y10S257/904 ,  Y10S257/906

Abstract: The present invention discloses a DRAM structure with multiple memory cells sharing the same bit-line contact. The DRAM structure of the present invention comprises: a substrate; an active region formed on the substrate, with a center region and a plurality of protrusion regions connecting to the two sides of the center region; a plurality of word-lines, disconnected from each other, each crossing the corresponding protrusion region; a plurality of channel regions, formed where the protrusion region overlaps with the word-lines; a plurality of source regions, formed at the outer areas of the channel regions; a sharing drain region, formed at the center region of the active region; a bit-line contact, formed on surface of the sharing drain region; a bit-line, crossing the center region and electrically connected to the sharing drain region via the bit-line contact; a plurality of capacitors, electrically connected to the source regions; and a plurality of metal lines, electrically connected to the corresponding word-lines.

Abstract translation: 本发明公开了具有共享相同位线接触的多个存储单元的DRAM结构。 本发明的DRAM结构包括：基板; 形成在所述基板上的有源区域，具有连接到所述中心区域的两侧的中心区域和多个突出区域; 多个字线彼此断开，每个字线与相应的突出区域交叉; 多个通道区域，形成在突起区域与字线重叠的位置上; 多个源区，形成在沟道区的外部区域; 形成在有源区的中心区域的共用漏极区; 形成在共享漏极区域的表面上的位线接触; 位线，穿过中心区域并且经由位线接触电连接到共享漏极区域; 多个电容器，电连接到源极区域; 和多个金属线，电连接到相应的字线。