公开(公告)号：US5951773A

公开(公告)日：1999-09-14

申请号：US819871

申请日：1997-03-18

Applicant: Jin Jang ,  Jae-gak Kim ,  Se-Il Ok

Inventor： Jin Jang ,  Jae-gak Kim ,  Se-Il Ok

IPC: C23C16/50 ,  C23C16/24 ,  C23C16/34 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00

CPC classification number: C23C16/24 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01L21/3185 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  Y10S156/914

Abstract: Disclosed is an inductively coupled plasma chemical vapor deposition apparatus including: a vacuum reaction chamber having an interior, bounded in part by a dielectric shield, the dielectric shield being lined with an oxygen-less silicon layer formed on its interior surface; a gas introducing unit for introducing a reactant gas to the interior of the vacuum reaction chamber; an antenna where radio frequency power is applied, the antenna being arranged outside the vacuum reaction chamber and adjacent to the dielectric shield; a coupling unit for coupling a radio frequency power source to the antenna; a stage for heating a work piece to be processed within the interior of the vacuum reaction chamber; and an exhaust unit for exhausting remnant gases from the interior of the vacuum reaction chamber. The oxygen-less silicon layer can be either an amorphous silicon layer, silicon nitride layer or silicon carbide layer.

Abstract translation: 公开了一种电感耦合等离子体化学气相沉积设备，包括：真空反应室，其内部部分由绝缘屏蔽层限定，该介电屏蔽层衬有在其内表面上形成的无氧硅层; 气体引入单元，用于将反应气体引入到真空反应室的内部; 天线，其中施加有射频功率，天线布置在真空反应室的外部并与电介质屏蔽相邻; 用于将射频电源耦合到天线的耦合单元; 用于加热在真空反应室内部处理的工件的阶段; 以及用于从真空反应室的内部排出残余气体的排气单元。 无氧硅层可以是非晶硅层，氮化硅层或碳化硅层。