公开(公告)号：US07266011B2

公开(公告)日：2007-09-04

申请号：US11368496

申请日：2006-03-07

申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

公开(公告)号：US20070116558A1

公开(公告)日：2007-05-24

申请号：US11599488

申请日：2006-11-15

申请人： Tomohiro Naruse ,  Hideki Akiniwa ,  Hiroaki Yoda ,  Minoru Hiroshima

发明人： Tomohiro Naruse ,  Hideki Akiniwa ,  Hiroaki Yoda ,  Minoru Hiroshima

IPC分类号： F04D29/44

CPC分类号： F04D1/006 ,  F04D15/0088 ,  F04D29/167

摘要： According to the present invention, along the right and left sides of a rotary shaft, flat faces that serve as sealing faces are formed at the circumferential edges, on the suction chamber side, of semicircular division plates, which define suction chambers and a discharge chamber of a volute casing that is divided into two segments. Two disc plates are prepared as pressure test tools, and are positioned on the right and left sides of the rotary shaft so that they contact the flat faces that are formed around the circumferential edges of the division plates near the suction chambers. The two disc plates are then securely connected to a member in the axial direction. In addition, a bolt fastening structure, which is axially tightened by the member that connects the disc plates axially, is provided in at least one axial direction.

摘要翻译： 根据本发明，沿着旋转轴的左右两侧，形成有作为密封面的平面形成在半圆形分隔板的吸入室侧的周缘部，形成吸入室和排出室 的蜗壳，分为两段。 制备两个盘片作为压力测试工具，并且位于旋转轴的左侧和右侧，使得它们接触形成在吸附室附近的分隔板周边的平面。 然后，两个盘片在轴向上牢固地连接到构件。 此外，在至少一个轴向方向上设置有由轴向连接盘片的构件轴向紧固的螺栓紧固结构。

公开(公告)号：US07145796B2

公开(公告)日：2006-12-05

申请号：US10933323

申请日：2004-09-03

申请人： Yoshiaki Fukuzumi ,  Hiroaki Yoda

发明人： Yoshiaki Fukuzumi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/228

摘要： A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.

摘要翻译： 半导体集成电路器件包括磁阻效应元件和插头。 磁阻效应元件包括其磁化方向固定的第一磁性层和其磁化方向可改变的第二磁性层。 插塞形成为在第二磁性层的膜厚度方向上穿过第二磁性层，并用于向第二磁性层施加写入磁场。

公开(公告)号：US20060198184A1

公开(公告)日：2006-09-07

申请号：US11255111

申请日：2005-10-21

申请人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

发明人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.

摘要翻译： 一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件， 具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层， 第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

公开(公告)号：US20060132984A1

公开(公告)日：2006-06-22

申请号：US11060301

申请日：2005-02-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

摘要翻译： 一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及 所述第一轭层包括第一，第二和第三区域。 并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线 ，第五和第六个地区。

公开(公告)号：US07064402B2

公开(公告)日：2006-06-20

申请号：US11189851

申请日：2005-07-27

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

公开(公告)号：US20060126230A1

公开(公告)日：2006-06-15

申请号：US11347208

申请日：2006-02-06

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

公开(公告)号：US07054187B2

公开(公告)日：2006-05-30

申请号：US10981508

申请日：2004-11-05

申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

公开(公告)号：US07038939B2

公开(公告)日：2006-05-02

申请号：US10696000

申请日：2003-10-30

申请人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Sumio Ikegawa ,  Yoshiaki Saito ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

摘要翻译： 磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

公开(公告)号：US20050259464A1

公开(公告)日：2005-11-24

申请号：US11189851

申请日：2005-07-27

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L27/105 ,  G11B5/33 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。