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公开(公告)号：US20050208424A1
公开(公告)日：2005-09-22
申请号：US11084997
申请日：2005-03-21
IPC分类号： G03F7/033 , C08F220/26 , C08F220/28 , G03C1/492 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译： 包含式（1）至（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3 O， >和R 4是H或OH，X是具有金刚烷结构的叔烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。
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公开(公告)号：US06844133B2
公开(公告)日：2005-01-18
申请号：US10230341
申请日：2002-08-29
申请人： Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho
发明人： Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0045 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1) wherein R1 is H or methyl, R2 is H or C1-8 alkyl, R3 is CO2R4, and R4 is C1-15 alkyl and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane structure or tetracyclo-[4.4.0.12,5.17,10]dodecane structure and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV
摘要翻译： 包含式（1）的重复单元的聚合物，其中R 1是H或甲基，R 2是H或C 1-8烷基，R 3是CO 2 R 4，R 4是C1- 15个烷基和重复单元，其具有通过含有金刚烷结构或四环 - [4.4.0.1,2.51.1,7,10]]十二烷结构的酸可分解保护基保护的羧酸，并且具有1,000- 50万是小说。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案
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公开(公告)号：US06835525B2
公开(公告)日：2004-12-28
申请号：US10073223
申请日：2002-02-13
IPC分类号： G03F7038
CPC分类号： C08F224/00 , C08F216/16 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 通过使（甲基）丙烯酸衍生物与乙烯基醚化合物，烯丙基醚化合物和含氧脂环族烯烃化合物共聚得到新的聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。
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公开(公告)号：US06673518B2
公开(公告)日：2004-01-06
申请号：US10170346
申请日：2002-06-14
申请人： Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho
发明人： Tsunehiro Nishi , Koji Hasegawa , Takeshi Kinsho
IPC分类号： G03C1492
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0397
摘要： A polymer comprising recurring units of formula (1) wherein R1 is H or methyl, R2 is H or C1-8 alkyl, R3 is hydrogen or CO2R4, and R4 is C1-15 alkyl and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane or tetracyclo-[4.4.0.12,5.17,10]dodecane structure and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 包含式（1）的重复单元的聚合物，其中R 1是H或甲基，R 2是H或C 1-8烷基，R 3是氢或CO 2 R 4，R 4是 C1-15烷基和具有羧酸保护的重复单元，所述羧酸用含有金刚烷或四环 - [4.4.0.1,2.5,1.1,7,10]]十二烷结构的酸可分解保护基团保护，并具有Mw为1,000 -500,000是小说。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。
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公开(公告)号：US06670094B2
公开(公告)日：2003-12-30
申请号：US10000221
申请日：2001-12-04
IPC分类号： G03F7038
CPC分类号： G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 包含式（1-1）或（1-2）的重复单元的聚合物，其中R 1和R 2是H或C 1-15烷基，R 1和R 2一起可以一起 形成戒指 R 3为H，C 1-15烷基，酰基或烷基磺酰基或可具有卤素取代基的C 2-5烷氧基羰基或烷氧基烷基，并不全部为R 1，R 2和R 3为氢; 并且k = 0或1，并且具有1,000-500,000的Mw是新颖的。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。
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76.发明授权Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition 有权图案形成工艺，化学放大正性抗蚀剂组合物和抗蚀剂改性组合物公开(公告)号：US08658346B2
公开(公告)日：2014-02-25
申请号：US12850266
申请日：2010-08-04
申请人： Takeru Watanabe , Tsunehiro Nishi , Masashi Iio
发明人： Takeru Watanabe , Tsunehiro Nishi , Masashi Iio
CPC分类号： G03F7/70466 , C08F220/60 , C08F224/00 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.
摘要翻译： 通过（1）将第一正性抗蚀剂组合物涂布在基材上，烘烤，图案曝光，PEB和显影以形成包括大面积特征的第一正性抗蚀剂图案，（2）涂覆抗蚀剂改性组合物，形成图案，所述抗蚀剂改性组合物包含 碱性含氮化合物和加热以改性第一抗蚀剂图案，和（3）在其上涂覆第二正性抗蚀剂组合物，图案曝光和显影以形成第二抗蚀剂图案。 第一抗蚀剂图案中的大面积特征在第二图案形成之后具有至少50％的膜保持性。
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77.发明授权Acetal compounds and their preparation, polymers, resist compositions and patterning process 有权乙缩醛化合物及其制备方法，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08420290B2
公开(公告)日：2013-04-16
申请号：US12625711
申请日：2009-11-25
CPC分类号： C08F32/08 , C07C41/16 , C07C41/18 , C07C41/22 , C07C41/32 , C07C67/11 , C07C69/54 , C07C2603/74 , G03F7/0045 , G03F7/0397 , G03F7/2041 , C07C43/188 , C07C43/192
摘要： An acetal compound of formula (1) is provided wherein R1 is H, methyl or trifluoromethyl, R2 is a monovalent C1-C10 hydrocarbon group, R3 and R4 are H or a monovalent C1-C10 hydrocarbon group, R2 and R3 may together form an aliphatic hydrocarbon ring, and X1 is a single bond or a divalent C1-C4 hydrocarbon group. A polymer comprising recurring units derived from the acetal compound is used as a base resin to formulate a resist composition which exhibits a high resolution when processed by micropatterning technology, especially ArF lithography.
摘要翻译： 提供式（1）的缩醛化合物，其中R1是H，甲基或三氟甲基，R2是一价C1-C10烃基，R3和R4是H或一价C1-C10烃基，R2和R3可以一起形成 脂族烃环，X1是单键或二价C1-C4烃基。 使用包含衍生自缩醛化合物的重复单元的聚合物作为基础树脂，以配制在通过微图案技术特别是ArF光刻处理时显示出高分辨率的抗蚀剂组合物。
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78.发明申请RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开耐候聚合物，制备方法，耐蚀组合物和图案处理方法公开(公告)号：US20110054133A1
公开(公告)日：2011-03-03
申请号：US12940511
申请日：2010-11-05
IPC分类号： C08F224/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译： 通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。 聚合物具有基本上不溶性组分的最小化含量。 使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。
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公开(公告)号：US07601479B2
公开(公告)日：2009-10-13
申请号：US10936753
申请日：2004-09-09
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , C08F224/00
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R1，R3，R4和R7是氢或甲基，R2是酸不稳定基团，R5和R6是氢或羟基，R8是内酯结构基团， 提供Mw为1,000-50,000的Mw。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。
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公开(公告)号：US07541133B2
公开(公告)日：2009-06-02
申请号：US11984614
申请日：2007-11-20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.12,5.17,10]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含具有疏水性四环[4.4.0.12,5.17,10] - 十二烷结构的叔烷基保护基单元，羟基金刚烷单元，单环内酯单元和羧酸单元的聚合物。 酸产生剂（B）是特定的锍盐化合物。
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