公开(公告)号：US06524167B1

公开(公告)日：2003-02-25

申请号：US09698863

申请日：2000-10-27

申请人： Stan Tsai ,  Lizhong Sun ,  Shijian Li

发明人： Stan Tsai ,  Lizhong Sun ,  Shijian Li

IPC分类号： B24B100

CPC分类号： C09G1/02

摘要： A method and composition for selective removal of a conductive material residue and a portion of the barrier layer from a substrate surface. The composition includes a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. The method comprises selective removal of conductive material residue and a portion of the barrier layer from a substrate surface by applying a composition to a polishing pad, the composition including a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. In one aspect, the method comprises providing a substrate comprising a dielectric layer with feature definitions formed therein, a barrier layer conformally deposited on the dielectric layer and in the feature definitions formed therein, and a copper containing material deposited on the barrier layer and filling the feature definitions formed therein, polishing the substrate to substantially remove the conductive material, and polishing the substrate with a composition comprising a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water to remove conductive material residue and a portion of the barrier layer.

摘要翻译： 用于从衬底表面选择性去除导电材料残余物和阻挡层的一部分的方法和组合物。 组合物包括螯合剂，氧化剂，缓蚀剂，磨料颗粒和水。 该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。 该方法包括通过将组合物施加到抛光垫上来从基材表面选择性地除去导电材料残余物和阻挡层的一部分，该组合物包括螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水。 该组合物还可包含一种或多种pH调节剂和/或一种或多种pH缓冲剂。 在一个方面，该方法包括提供包括其中形成有特征定义的电介质层的基底，保形地沉积在电介质层上和在其中形成的特征定义中的阻挡层和沉积在阻挡层上的含铜材料， 在其中形成的特征定义，抛光基底以基本上去除导电材料，并用包含螯合剂，氧化剂，腐蚀抑制剂，磨料颗粒和水的组合物抛光基底以除去导电材料残余物和一部分屏障 层。

公开(公告)号：US06509269B2

公开(公告)日：2003-01-21

申请号：US09421452

申请日：1999-10-19

申请人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

发明人： Lizhong Sun ,  Shijian Li ,  Fred C. Redeker

IPC分类号： H01L21302

CPC分类号： B24B37/0056 ,  B24B37/044 ,  B24B53/017 ,  H01L21/3212

摘要： Polishing pad glazing during CMP of Al and Al alloys is eliminated or substantially reduced by utilizing a neutral polishing slurry containing a sufficient amount of a surfactant to prevent agglomeration of the abrasive particles with polishing by-products. Embodiments include CMP an Al or an Al alloy surface employing a slurry containing abrasive Al203 particles and about 0.02 to about 5 wt. % of a surfactant to prevent Al203 abrasive slurry particles from agglomerating with Al(OH)3 polishing by-products. Embodiments further include subsequent ex situ pad conditioning using an acid or base to dissolve, or a complexing agent to remove, Al(OH)3 polishing by-products.

摘要翻译： 通过利用含有足够量的表面活性剂的中性抛光浆料来消除或大大减少Al和Al合金的CMP期间的抛光垫玻璃，以防止磨料颗粒与抛光副产物团聚。 实施方案包括使用含有磨料Al 2 O 3颗粒和约0.02至约5重量％的浆料的CMP或Al合金表面。 ％的表面活性剂，以防止Al2O3磨料浆料颗粒与Al（OH）3抛光副产物附聚。 实施例还包括使用酸或碱溶解的随后的非原位垫调节剂或用于去除Al（OH）3抛光副产物的络合剂。

公开(公告)号：US06451697B1

公开(公告)日：2002-09-17

申请号：US09544281

申请日：2000-04-06

申请人： Lizhong Sun ,  Shijian Li ,  Fritz Redeker

发明人： Lizhong Sun ,  Shijian Li ,  Fritz Redeker

IPC分类号： H01L21302

CPC分类号： H01L21/3212 ,  C09G1/00

摘要： Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.

摘要翻译： 具有减少的凹陷和过度不敏感性的金属CMP通过在金属钝化领域具有pH和氧化还原电位的无磨料抛光组合物实现，因此在高温下具有低的静态蚀刻速率，例如高于 本发明的实施方案包括使用包含一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，一种或多种pH达3〜 约10和去离子水。

公开(公告)号：US6074546A

公开(公告)日：2000-06-13

申请号：US915775

申请日：1997-08-21

申请人： Lizhong Sun ,  James Shen ,  Lee Melbourne Cook

发明人： Lizhong Sun ,  James Shen ,  Lee Melbourne Cook

IPC分类号： C25F3/30 ,  H01L21/3063 ,  B23H3/00 ,  B23H5/00 ,  C25F3/00 ,  C25F7/00

CPC分类号： C25F3/30 ,  H01L21/3063

摘要： A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

摘要翻译： 提供了一种使用150-2000纳米波长范围内的电磁波对硅晶片进行光化学抛光的方法。 还公开了一种光化学抛光装置，其中电磁波由靠近硅晶片电极表面的波导提供。