公开(公告)号：US20220115078A1

公开(公告)日：2022-04-14

申请号：US17066997

申请日：2020-10-09

Applicant: Micron Technology, Inc.

Inventor： Hari Giduturi

IPC: G11C16/34 ,  G11C16/20 ,  G11C16/26 ,  G11C7/14 ,  G11C7/22 ,  G06F12/02 ,  G06F9/30

Abstract: A system may include multiple memory cells to store logical data, age tracking circuitry to track a time since a previous access of a particular memory cell, and control circuitry to access the memory cell. Such access may include a read operation of the memory cell, a write operation to the memory cell, or both. The control circuitry may determine an electrical parameter of the memory cell based at least in part on the tracked time since the previous access of the memory cell.

公开(公告)号：US20210343340A1

公开(公告)日：2021-11-04

申请号：US17375441

申请日：2021-07-14

Applicant: Micron Technology, Inc.

Inventor： Mingdong Cui ,  Nathan Joseph Sirocka ,  Hari Giduturi

IPC: G11C13/00

Abstract: An integrated circuit memory device having: a memory cell; and a voltage driver of depletion type connected to the memory cell. In a first polarity, the voltage driver is powered by a negative voltage relative to ground to drive a negative selection voltage or a first de-selection voltage; In a second polarity, the voltage driver is powered by a positive voltage relative to ground to drive a positive selection voltage or a second de-selection voltage. The voltage driver is configured to transition between the first polarity and the second polarity. During the transition, the voltage driver is configured to have a control voltage swing for outputting de-selection voltages smaller than a control voltage swing for output selection voltages.

公开(公告)号：US11087838B2

公开(公告)日：2021-08-10

申请号：US16660594

申请日：2019-10-22

Applicant: Micron Technology, Inc.

Inventor： Mingdong Cui ,  Nathan Joseph Sirocka ,  Hari Giduturi

IPC: G11C13/00

Abstract: An integrated circuit memory device having: a memory cell; and a voltage driver of depletion type connected to the memory cell. In a first polarity, the voltage driver is powered by a negative voltage relative to ground to drive a negative selection voltage or a first de-selection voltage; In a second polarity, the voltage driver is powered by a positive voltage relative to ground to drive a positive selection voltage or a second de-selection voltage. The voltage driver is configured to transition between the first polarity and the second polarity. During the transition, the voltage driver is configured to have a control voltage swing for outputting de-selection voltages smaller than a control voltage swing for output selection voltages.

公开(公告)号：US20210208653A1

公开(公告)日：2021-07-08

申请号：US16733911

申请日：2020-01-03

Applicant: Micron Technology, Inc.

Inventor： Hari Giduturi

IPC: G06F1/26 ,  G06F13/16

Abstract: Methods, systems, and devices for power management of a memory device are described. An apparatus may include a substrate and an input/output (I/O) interface and memory device coupled with the substrate. The I/O interface may communicate with a host device and the memory device may store data associated with the host device. The apparatus may include a power management component for providing one or more supply voltages to the memory device. The power management component may receive input voltages associated with the substrate and provide the supply voltages to the memory device based on the input voltages. The power management component may include a first portion integrated with the memory device and a second portion coupled with the substrate. The first portion may include control circuitry for the power management component and the second portion may include passive components for the power management component.