公开(公告)号：US20100009547A1

公开(公告)日：2010-01-14

申请号：US12305497

申请日：2007-06-06

申请人： Takeshi Sakamoto

发明人： Takeshi Sakamoto

IPC分类号： H01L21/268

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0011 ,  C03B33/0222

摘要： An object to be processed is restrained from warping at the time of laser processing. A modified region M2 is formed within a wafer 11, and fractures a2, b2 extending in directions parallel to the thickness direction of the wafer 11 and tilted with respect to a plane including lines 5 are generated from the modified region M2. A modified region M3 is formed within the wafer 11, and a fracture a3 extending in a direction parallel to the thickness direction of the wafer 11 and tilted with respect to the plane including the lines 5 is generated from the modified region M3 so as to connect with the fracture b2. That is, the fractures a2, a3, b2 are generated so as to be connected together. Therefore, at the time of laser processing, the fractures cause both side parts holding the lines to cut 5 therebetween in the wafer 11 to mesh with each other, whereby internal stresses occurring in a direction parallel to the thickness direction of the wafer 11 and perpendicular to the surface including the lines 5 when the modified regions are formed can be reduced.

摘要翻译： 在激光加工时，抑制被处理物体发生翘曲。 在晶片11内形成有改质区域M2，并且从改质区域M2产生从平行于晶片11的厚度方向延伸的方向相对于包含线5的面倾斜的断裂的a2，b2。 在晶片11内形成改质区域M3，从修正区域M3产生沿与晶片11的厚度方向平行的方向延伸且相对于包含线5的平面倾斜的断面a3， 与骨折b2。 也就是说，产生断裂a2，a3，b2以便连接在一起。 因此，在激光加工时，由于在晶片11中使夹着切断线5的两个部分彼此啮合，因此在与晶片11的厚度方向平行的方向上产生内应力， 可以减少形成修饰区域时包括线5的表面。

公开(公告)号：US20090302428A1

公开(公告)日：2009-12-10

申请号：US12159338

申请日：2006-12-26

申请人： Takeshi Sakamoto ,  Kenichi Muramatsu

发明人： Takeshi Sakamoto ,  Kenichi Muramatsu

IPC分类号： H01L23/544 ,  H01L21/302

CPC分类号： H01L23/544 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  C03B33/0222 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.

摘要翻译： 在基板4上形成有会聚点P的基板4和形成在基板4的正面3上的多个功能元件15的被处理体1照射激光L，至少形成 一排分割改质区域72，位于分割改质区域72与基材4前表面3之间的至少一排质量改质区域71，以及至少一行位于 分割改质区域72和基板4的背面21一行切割5.这里，沿着切割线的方向，使分割改质区域72的形成密度低于质量改质区域的形成密度 71和改造后HC区域73。

公开(公告)号：US07619329B2

公开(公告)日：2009-11-17

申请号：US10551803

申请日：2004-03-31

申请人： Takeshi Sakamoto ,  Tomomi Yamamoto ,  Tatsuhiro Iwai ,  Yasuyuki Nakayama

发明人： Takeshi Sakamoto ,  Tomomi Yamamoto ,  Tatsuhiro Iwai ,  Yasuyuki Nakayama

IPC分类号： H02K41/02

CPC分类号： H02K1/04 ,  H02K1/17 ,  H02K41/0358

摘要： A magnet body 1 including a shorter periphery 11, a longer periphery 12 located at a position separated from the shorter periphery 11 by a predetermined distance, and a pair of side peripheries 13, 14 connecting the shorter periphery 11 and longer periphery 12 to each other, the magnet body having a fan-shaped planar form; and a corrosion-resistant film (Ni plating film 2) applied to a surface of the magnet body. The permanent magnet member 10 has a thickness whose maximum and minimum values yield a difference of 10 to 150 μm therebetween.

摘要翻译： 一个包括较短周边11的磁体1，位于与较短周边11隔开预定距离的位置的较长周边12以及将较短周边11和较长周边12彼此连接的一对侧周周缘13,14 磁体具有扇形平面形状; 以及施加到磁体的表面的耐腐蚀膜（Ni镀膜2）。 永久磁铁构件10的厚度的最大值和最小值之间的差为10〜150μm。

公开(公告)号：US20090166808A1

公开(公告)日：2009-07-02

申请号：US10594907

申请日：2005-03-25

申请人： Takeshi Sakamoto ,  Kenshi Fukumitsu

发明人： Takeshi Sakamoto ,  Kenshi Fukumitsu

IPC分类号： H01L23/00 ,  H01L21/301 ,  B23K26/38

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision.This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4, so as to form modified regions 71, 72, 73 within the substrate 4. Here, the HC modified region 73 is formed at a position between the segmented modified region 72 closest to the rear face 21 and the rear face 21, so as to generate a fracture 24 extending along a line to cut from the HC modified region 73 to the rear face 21. Therefore, when an expandable tape is bonded to the rear face 21 of the substrate 4 and expanded, fractures smoothly advance from the substrate 4 to a laminate part 16 by way of the segmented modified regions 72, whereby the substrate 4 and laminate part 16 can be cut along the line to cut with a high precision.

摘要翻译： 提供了一种激光加工方法，即使当形成有包括多个功能元件的层叠部件的基板较厚时，也可以高精度地切割基板并层压部件。 该激光加工方法使用背面21作为激光入射面，用激光L照射基板4，并且将聚光点P定位在基板4内，以在其内部形成改质区域71,72,73 这里，HC改质区域73形成在最靠近后表面21的分段改质区域72与后面21之间的位置处，以便产生沿着从HC修饰的切割线延伸的裂缝24 区域73到后面21.因此，当可扩展带粘合到基板4的后表面21并膨胀时，通过分段改质区域72从基板4平滑地前进到层压部16，由此 基板4和层叠部16能够沿着切断线高精度切断。

公开(公告)号：US20090107967A1

公开(公告)日：2009-04-30

申请号：US11994581

申请日：2006-07-03

申请人： Takeshi Sakamoto ,  Kenichi Muramatsu

发明人： Takeshi Sakamoto ,  Kenichi Muramatsu

IPC分类号： B23K31/10

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

摘要： A method of cutting an object to be processed is provided, which can accurately cut an object to be processed comprising a substrate and a multilayer part provided on the front face of the substrate while having a plurality of functional devices into the functional devices along a line to cut in a short time even when the substrate is thick. A substrate 4 is irradiated with laser light L from the multilayer part 16 side while locating a converging point P within the substrate 4, so as to form a first modified region 71 shifted from the center position CL in the thickness direction of the substrate 4 to the rear face 21 side of the substrate 4 and a second modified region 72 shifted from the center position CL in the thickness direction of the substrate 4 to the front face 3 side of the substrate 4 within the substrate 4 along a line to cut, and generate a fracture 24 from the second modified region 72 to the front face 3 of the substrate 4. Thereafter, while in a state where an expandable tape 23 attached to the rear face 21 of the substrate 4 is expanded, a stress is generated in an object to be processed 1 such as to open the fracture 24.

摘要翻译： 提供了一种切割待处理物体的方法，其可以精确地切割被加工物，其包括基板和设置在基板的正面上的多层部件，同时沿着线路具有多个功能元件进入功能元件 即使在基材较厚时也能在短时间内切割。 基板4从多层部16侧照射激光L，同时将会聚点P定位在基板4内，以形成从基板4的厚度方向的中心位置CL移位的第一改质区域71到 基板4的背面21侧和第二改质区域72沿着切断线在基板4的基板4的基板4的基板4的前面3侧沿基板4的厚度方向从中心位置CL移位， 产生从第二改质区域72到基板4的正面3的断裂线24.此后，在将基板4的背面21上附着的可扩张带23膨胀的状态下，产生应力 待处理物体1如打开骨折24。

公开(公告)号：US07473343B2

公开(公告)日：2009-01-06

申请号：US10788464

申请日：2004-03-01

申请人： Takeshi Sakamoto ,  Yasuyuki Nakayama ,  Tatsuhiro Iwai ,  Tomomi Yamamoto

发明人： Takeshi Sakamoto ,  Yasuyuki Nakayama ,  Tatsuhiro Iwai ,  Tomomi Yamamoto

IPC分类号： C25D5/12 ,  C25D3/16 ,  C23C28/00

CPC分类号： C25D7/001 ,  C25D3/12 ,  C25D5/14 ,  H01F41/026

摘要： Provided are a method of manufacturing a rare-earth magnet with superior corrosion resistance, and a plating bath used for the method. A first protective film including nickel and a second protective film including nickel and sulfur are laminated in order on a magnet body including a rare-earth element. The first protective film is formed through electroplating with a first plating bath including a nickel source, a conductive salt and a pH stabilizer, and having a concentration of the nickel source of 0.3 mol/l to 0.7 mol/l on a nickel atom basis and a conductivity of 80 mS/cm or over. Thereby, a rare-earth-rich phase can be prevented from being leached out, and the production of pinholes can be reduced. Therefore, the corrosion resistance of the rare-earth magnet can be improved.

摘要翻译： 提供了具有优异的耐腐蚀性的稀土类磁体的制造方法以及该方法所用的电镀液。 包括镍的第一保护膜和包括镍和硫的第二保护膜依次层叠在包括稀土元素的磁体上。 第一保护膜通过电镀形成，其中包括镍源，导电盐和pH稳定剂的第一电镀浴，镍原子的浓度为镍原子为0.3mol / l至0.7mol / l， 电导率为80mS / cm以上。 由此，可以防止稀土相析出，能够减少针孔的产生。 因此，能够提高稀土类磁铁的耐腐蚀性。

公开(公告)号：US20080283740A1

公开(公告)日：2008-11-20

申请号：US12038829

申请日：2008-02-28

申请人： Shuhei HASHIBA ,  Takeshi Sakamoto

发明人： Shuhei HASHIBA ,  Takeshi Sakamoto

IPC分类号： B01D59/44

CPC分类号： H01J49/0027 ,  G01N30/724 ,  Y10T436/13

摘要： When a liquid mixture of two samples such as biological samples labeled with stable isotopes is subjected to a relative quantitative analysis using a liquid chromatography-tandem mass spectrometry system, various constituents are simultaneously ionized. Accordingly, sufficient time required for second mass spectrometry is not ensured, whereby some ions remain unanalyzed after measurement. To address this problem, after second mass spectrometry, amino acid sequencing is performed using the analysis data of the second mass spectrometry, which enables determination on the presence/absence of a specific amino acid labeled with a stable isotope. When the specific amino acid is present, the m/z value of an isotopically-labeled-paired ion in an MS spectrum is calculated, and non-target information for use in second mass spectrometry is created using the calculated m/z information. This avoids redundant second mass spectrometry on sample components derived from the same peptide while allowing second mass spectrometry to be efficiently performed.

摘要翻译： 当使用液相色谱 - 串联质谱系统进行相对定量分析，将诸如用稳定同位素标记的生物样品的两个样品的液体混合物进行相对定量分析时，同时电离各种成分。 因此，不能确保第二质谱所需的足够的时间，从而在测量之后一些离子保持未分析。 为了解决这个问题，在第二次质谱法之后，使用第二质谱分析数据进行氨基酸测序，其能够确定用稳定同位素标记的特定氨基酸的存在/不存在。 当存在特定氨基酸时，计算MS谱中同位素标记配对离子的m / z值，并使用所计算的m / z信息产生用于第二质谱的非目标信息。 这避免了来自相同肽的样品组分的冗余第二质谱，同时允许有效地进行第二质谱。

公开(公告)号：US20080000884A1

公开(公告)日：2008-01-03

申请号：US11822151

申请日：2007-07-02

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： B23K26/16

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

摘要翻译： 可以沿着切割线高精度地切割待处理的物体。 将被处理物体1照射激光，同时将会聚点定位在硅晶片11内，并且会聚点沿切割线5相对移动，从而形成位于该晶片11内的改质区域M 1，M 2 对象1沿着切割线5，然后是位于对象1内的修改区域M 1，M 2之间的修改区域M 3。

公开(公告)号：US07078765B2

公开(公告)日：2006-07-18

申请号：US10812870

申请日：2004-03-31

申请人： Kingo Kurotani ,  Takeshi Sakamoto ,  Michio Yano ,  Kenichi Nagura

发明人： Kingo Kurotani ,  Takeshi Sakamoto ,  Michio Yano ,  Kenichi Nagura

IPC分类号： H01L29/94

CPC分类号： H01L29/0653 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7835

摘要： In a technique to improve the high-frequency power gain of an LDMOS, the distance from the surface of a passivation film covering electrode pads to the rear surface of a silicon substrate is set into 200 μm or less, or a trench of 2 μm or more in thickness, in which an insulating film or a conductor is embedded, is formed between a region where a p type impurity is diffused, when a p+ type source penetrating layer is formed, and the channel region of a third LDMOS, so as to extend from the front surface of a semiconductor layer toward a silicon substrate. This trench restrains the p+ type source penetrating layer from spreading to the channel region, thereby lowering the inductance or the resistance of the source and improving the high-frequency power gain.

摘要翻译： 在提高LDMOS的高频功率增益的技术中，从覆盖电极焊盘的钝化膜的表面到硅衬底的后表面的距离设定为200μm或更小，或2μm的沟槽或 当形成ap型杂质扩散的区域时，形成绝缘膜或导体的厚度越多，形成ap + +型源极穿透层的区域， 第三LDMOS，以便从半导体层的前表面向硅衬底延伸。 该沟槽限制了p + SUP +型源极穿透层扩散到沟道区域，从而降低了源极的电感或电阻，并提高了高频功率增益。

公开(公告)号：US06987903B2

公开(公告)日：2006-01-17

申请号：US11101518

申请日：2005-04-08

申请人： Ichiro Nakajima ,  Hiroaki Tomofuji ,  Takeshi Sakamoto ,  Yuji Shimada

发明人： Ichiro Nakajima ,  Hiroaki Tomofuji ,  Takeshi Sakamoto ,  Yuji Shimada

IPC分类号： G02B6/28

CPC分类号： H04B10/25253

摘要： An optical transmission network includes a first dispersion compensator arranged in a maximum dispersion span having a maximum dispersion value and searched out from within a maximum dispersion route having a maximum dispersion value from among routes of non-regeneration intervals within which a dispersion value before dispersion compensation does not satisfy an upper limit of a dispersion tolerance, and a second dispersion compensator arranged in a maximum dispersion span having a maximum dispersion value searched out from within a maximum dispersion route having a maximum dispersion value from among the routes when a dispersion compensator is successively arranged until a route of a non-regeneration interval within which a dispersion value of a certain channel does not satisfy the dispersion tolerance does not remain any more based on the dispersion value after the dispersion compensation with respect to the searched out maximum dispersion span. The dispersion compensation amounts of the first and second dispersion compensators are such that, when the dispersion compensation amount of the maximum dispersion span in which the first and second dispersion compensators are arranged is successively increased, the span has a residual dispersion value equal to or higher than a fixed range and the maximum dispersion route which relates to the spans has a residual dispersion value which satisfies the dispersion tolerance or the span has a residual dispersion value which is within the fixed range.

摘要翻译： 光传输网络包括布置在具有最大色散值的最大色散跨度中的第一色散补偿器，并且从在非再生间隔的路径内具有最大色散值的最大色散路径内搜索出的第一色散补偿器，其中色散补偿之前的色散值 不满足色散公差的上限，并且在色散补偿器连续地从路径中具有最大色散值的最大色散路径中搜索出的具有最大色散值的最大色散范围内的第二色散补偿器 排列直到某个通道的色散值不满足色散容限的非再生间隔的路径基于相对于搜索出的最大色散跨度的色散补偿之后的色散值不再存在。 第一和第二色散补偿器的色散补偿量使得当排列第一和第二色散补偿器的最大色散跨度的色散补偿量依次增加时，跨度具有等于或等于更高的残余色散值 与固定范围相关联的最大色散路径与跨度相关的最大色散路径具有满足色散公差或跨度的残留色散值具有在固定范围内的残留色散值。