公开(公告)号：US20090212396A1

公开(公告)日：2009-08-27

申请号：US11667596

申请日：2005-11-10

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L29/00 ,  H01L21/301

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular.In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供一种激光加工方法，其中，当切割形成有包括多个功能元件的多层部件的基板时，可以特别高精度地切割多层部件。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。

公开(公告)号：US08338271B2

公开(公告)日：2012-12-25

申请号：US13235936

申请日：2011-09-19

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

摘要翻译： 可以沿着切割线高精度地切割待处理的物体。 在将硅晶片11内的会聚点定位的同时用激光照射被处理体1，并且会聚点沿切割线5相对移动，以形成位于物体1内的改质区域M1，M2 沿着切割线5，然后是位于对象1内的修改区域M1，M2之间的修改区域M3。

公开(公告)号：US07939430B2

公开(公告)日：2011-05-10

申请号：US11667538

申请日：2005-11-10

申请人： Takeshi Sakamoto ,  Ryuji Sugiura

发明人： Takeshi Sakamoto ,  Ryuji Sugiura

IPC分类号： H01L31/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B28D5/0052 ,  C03B33/074 ,  C03B33/091

摘要： A laser processing method is provided, which, when cutting an object to be processed comprising a substrate and a multilayer part, formed on a front face of the substrate, including a functional device, can cut the multilayer part with a high precision in particular.In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供一种激光加工方法，其可以在包括功能元件的基板的正面上形成的包括基板和多层部的被加工物进行切割时，能够高精度地切割多层部。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。

公开(公告)号：US20110001220A1

公开(公告)日：2011-01-06

申请号：US12882787

申请日：2010-09-15

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L29/02 ,  B23K26/00

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular.In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供一种激光加工方法，其中，当切割形成有包括多个功能元件的多层部件的基板时，可以特别高精度地切割多层部件。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。

公开(公告)号：US20090081851A1

公开(公告)日：2009-03-26

申请号：US11667538

申请日：2005-11-10

申请人： Takeshi Sakamoto ,  Ryuji Sugiura

发明人： Takeshi Sakamoto ,  Ryuji Sugiura

IPC分类号： H01L21/304

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B28D5/0052 ,  C03B33/074 ,  C03B33/091

摘要： A laser processing method is provided, which, when cutting an object to be processed comprising a substrate and a multilayer part, formed on a front face of the substrate, including a functional device, can cut the multilayer part with a high precision in particular.In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供一种激光加工方法，其可以在包括功能元件的基板的正面上形成的包括基板和多层部的被加工物进行切割时，能够高精度地切割多层部。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。

公开(公告)号：US07897487B2

公开(公告)日：2011-03-01

申请号：US11822151

申请日：2007-07-02

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

摘要翻译： 可以沿着切割线高精度地切割待处理的物体。 在将硅晶片11内的会聚点定位的同时用激光照射被处理体1，并且会聚点沿切割线5相对移动，以形成位于物体1内的改质区域M1，M2 沿着切割线5，然后是位于对象1内的修改区域M1，M2之间的修改区域M3。

公开(公告)号：US20080000884A1

公开(公告)日：2008-01-03

申请号：US11822151

申请日：2007-07-02

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： B23K26/16

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

摘要翻译： 可以沿着切割线高精度地切割待处理的物体。 将被处理物体1照射激光，同时将会聚点定位在硅晶片11内，并且会聚点沿切割线5相对移动，从而形成位于该晶片11内的改质区域M 1，M 2 对象1沿着切割线5，然后是位于对象1内的修改区域M 1，M 2之间的修改区域M 3。

公开(公告)号：US08143141B2

公开(公告)日：2012-03-27

申请号：US12882787

申请日：2010-09-15

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L21/46

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser processing method is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular.In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供一种激光加工方法，其中，当切割形成有包括多个功能元件的多层部件的基板时，可以特别高精度地切割多层部件。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。

公开(公告)号：US08043941B2

公开(公告)日：2011-10-25

申请号：US12688516

申请日：2010-01-15

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222

摘要： An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

公开(公告)号：US07902636B2

公开(公告)日：2011-03-08

申请号：US11667596

申请日：2005-11-10

申请人： Ryuji Sugiura ,  Takeshi Sakamoto

发明人： Ryuji Sugiura ,  Takeshi Sakamoto

IPC分类号： H01L29/30

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： A semiconductor device is provided, which, when cutting a substrate formed with a multilayer part including a plurality of functional devices, makes it possible to cut the multilayer part with a high precision in particular. In a state where a protective tape 22 is attached to the front face 16a of a multilayer part 16, a substrate 4 is irradiated with laser light L while using its rear face 4b as a laser light entrance surface, so as to form a modified region 7 within the substrate 4 along a line to cut, thereby generating a fracture 24 reaching the front face 4a of the substrate 4 from a front-side end part 7a of the modified region 7. Attaching an expandable tape to the rear face 4b of the substrate 4 and expanding it in the state where such a fracture 24 is generated can cut not only the substrate 4 but also the multilayer part 16 on the line to cut, i.e., interlayer insulating films 17a, 17b, with a favorable precision along the line to cut.

摘要翻译： 提供了一种半导体器件，当切割形成有包括多个功能器件的多层部件的基板时，可以特别高精度地切割多层部件。 在保护带22附着到多层部16的前表面16a的状态下，用激光L照射基板4，同时使用其背面4b作为激光入射面，从而形成改质区域 沿着切割线在衬底4内部，从而从修改区域7的前侧端部7a产生到达衬底4的前表面4a的断裂24.将可膨胀带附接到 在产生这种断裂的状态下使基板4膨胀的状态不仅可以切割基板4而且还可以切割线路上的多层部16即线间绝缘膜17a，17b， 切割。