公开(公告)号：US07502206B2

公开(公告)日：2009-03-10

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US07295406B2

公开(公告)日：2007-11-13

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US06741429B1

公开(公告)日：2004-05-25

申请号：US09669030

申请日：2000-09-25

申请人： John Edward Eric Baglin ,  Liesl Folks ,  Bruce Alvin Gurney ,  Bruce David Terris

发明人： John Edward Eric Baglin ,  Liesl Folks ,  Bruce Alvin Gurney ,  Bruce David Terris

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3272

摘要： A magnetoresistive (MR) sensor can be shaped using ion beam irradiation and/or implantation through a mask introduced between a MR structure and an ion source. The mask covers selected portions of the MR structure to define the track width of the sensor. Ion irradiation and/or implantation reduces the magnetoresistance of the unmasked portions while leaving the masked portion substantially unaltered. The mask can be a photoresist mask, an electron beam resist mask, or a stencil mask. Alternatively the mask may be part of a projection ion beam system. Track width resolution is determined at the mask production step. The edges of the sensor can be defined by a highly collimated ion beam producing an extremely straight transition edge, which reduces sensor noise and improves sensor track width control. Improved hard bias layers that directly abut the sensor may be used to achieve a suitable stability. A variety of longitudinal bias schemes are compatible with ion beam patterning.

摘要翻译： 可以使用离子束照射和/或通过在MR结构和离子源之间引入的掩模注入来形成磁阻（MR）传感器。 掩模覆盖MR结构的所选部分以限定传感器的轨道宽度。 离子照射和/或注入降低未掩蔽部分的磁阻，同时使掩蔽部分基本上保持不变。 掩模可以是光致抗蚀剂掩模，电子束抗蚀剂掩模或模板掩模。 或者，掩模可以是投影离子束系统的一部分。 轨迹宽度分辨率在掩模生产步骤中确定。 传感器的边缘可以由高度准直的离子束限定，产生非常直的过渡边缘，这降低了传感器噪声并提高了传感器轨道宽度控制。 可以使用直接邻接传感器的改进的硬偏压层来实现合适的稳定性。 各种纵向偏置方案与离子束图案相容。