利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

59 条记录 (耗时 0.028 秒)

    Planar extraordinary magnetoresistance sensor
    2.
    发明授权
    Planar extraordinary magnetoresistance sensor 有权
    平面非凡磁阻传感器

    公开(公告)号：US07203036B2

    公开(公告)日：2007-04-10

    申请号：US10909122

    申请日：2004-07-30

    申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

    发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

    IPC分类号： G11B5/39 ,  G01R33/02 ,  G01R27/08

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

    摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

    摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。

    Slider with integrated writer and semiconductor heterostucture read sensor
    3.
    发明授权
    Slider with integrated writer and semiconductor heterostucture read sensor 有权
    具有集成写入器和半导体异构结构读取传感器的滑块

    公开(公告)号：US08107197B2

    公开(公告)日：2012-01-31

    申请号：US12345812

    申请日：2008-12-30

    申请人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

    发明人： Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

    IPC分类号： G11B15/64

    CPC分类号： G11B5/6005 ,  G11B5/3993

    摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

    摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。

    Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry
    4.
    发明授权
    Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 失效
    具有用于激活和去激活静电放电防止电路的结构的磁阻传感器

    公开(公告)号：US08169751B2

    公开(公告)日：2012-05-01

    申请号：US11426908

    申请日：2006-06-27

    申请人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

    发明人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/40

    摘要： A structure for preventing Electrostatic Discharge (LSD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes to solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.

    摘要翻译： 用于在制造期间防止静电放电（LSD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 该开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

    Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry
    5.
    发明授权
    Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 有权
    具有用于激活和去激活静电放电防止电路的结构的磁阻传感器

    公开(公告)号：US08634168B2

    公开(公告)日：2014-01-21

    申请号：US13433192

    申请日：2012-03-28

    申请人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

    发明人： Thomas Robert Albrecht ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/40

    摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.

    摘要翻译： 用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

    Lead contact structure for EMR elements
    7.
    发明授权
    Lead contact structure for EMR elements 失效
    EMR元件的引线接触结构

    公开(公告)号：US07633718B2

    公开(公告)日：2009-12-15

    申请号：US11168070

    申请日：2005-06-27

    申请人： Robert E. Fontana, Jr. ,  Stefan Maat

    发明人： Robert E. Fontana, Jr. ,  Stefan Maat

    IPC分类号： G11B5/48 ,  G11B21/16 ,  G11B5/33 ,  G11B5/127

    CPC分类号： H01L43/08 ,  G11C11/14 ,  H01L43/12

    摘要： EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.

    摘要翻译： 公开了EMR元件和制造EMR元件的方法。 EMR结构包括形成有源区的一个或多个层，例如二维电子气（2DEG）。 EMR结构具有第一侧表面，具有从EMR结构的主体向外延伸的多个引线突起和相对的第二侧表面。 引线突起用于形成EMR元件的电流和电压引线。 有源区域延伸穿过每个引线突起，并且可沿着每个引线突起的周边被接近。 沿着每个引线突起的周边形成导电材料，并沿周边与EMR结构的有源区接触。 引线突起和与每个引线突起的有源区接触的相应的导电材料形成用于EMR元件的引线，例如电流引线和电压引线。

    EMR sensor and transistor formed on the same substrate
    8.
    发明授权
    EMR sensor and transistor formed on the same substrate 有权
    EMR传感器和晶体管形成在同一基板上

    公开(公告)号：US08059373B2

    公开(公告)日：2011-11-15

    申请号：US11549879

    申请日：2006-10-16

    申请人： Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    发明人： Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3993

    摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

    摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

    Memory array having memory cells formed from metallic material
    9.
    发明授权
    Memory array having memory cells formed from metallic material 有权
    具有由金属材料形成的存储单元的存储器阵列

    公开(公告)号：US07615771B2

    公开(公告)日：2009-11-10

    申请号：US11380498

    申请日：2006-04-27

    申请人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    发明人： Robert E. Fontana, Jr. ,  Eric E. Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

    IPC分类号： H01L27/20

    CPC分类号： G11C11/16 ,  G11C11/1675

    摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

    摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

    Inductor with stacked conductors
    10.
    发明授权
    Inductor with stacked conductors 有权
    具有堆叠导体的电感器

    公开(公告)号：US09064628B2

    公开(公告)日：2015-06-23

    申请号：US13477978

    申请日：2012-05-22

    申请人： Robert E. Fontana, Jr. ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

    发明人： Robert E. Fontana, Jr. ,  Philipp Herget ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Bucknell C. Webb

    IPC分类号： H01F5/00 ,  H01F27/28 ,  H01F17/00 ,  H01L49/02

    CPC分类号： H01F27/2804 ,  H01F5/00 ,  H01F17/0013 ,  H01F2017/0066 ,  H01F2017/0086 ,  H01F2027/2809 ,  H01L28/10

    摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.

    摘要翻译： 薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。 薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。